AEC-Q101 Silicon Carbide (SiC) Schottky Barrier Di

By ROHM Semiconductor 73

AEC-Q101 Silicon Carbide (SiC) Schottky Barrier Di

Rohm Semiconductor's 2nd generation, AEC-Q101 silicon carbide (SiC) Schottky barrier diodes are ideal for higher voltage automotive applications such as HEV/EV power supplies due to lower switching loss, reduced temperature dependency, and higher reliability.

Features
  • AEC-Q101 qualified
  • Low forward voltage - VF
  • Low switching loss
  • Fast switching speed and fast reverse recovery (Low trr)
  • Reduced temperature dependency
  • Current range from 6 A to 20 A
  • RoHS compliant
  • Package: D2PAK (LPTL or TO-263AB)
Applications
  • Automotive high power DC/DC converters
  • HEV/EV chargers
  • Switch mode power supplies
  • Solar inverters
  • DC/DC converters
  • Motor drivers
  • UPS

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