Silicon Carbide Transistor advantages include low switching losses, higher efficiency, high temperature operation and high short circuit withstand capability.
By GeneSiC Semiconductor 16
Features superior surge current capability, positive temperature coefficient of Vf, superior figure of merit Qc/If and much more.
By GeneSiC Semiconductor 19
GeneSiC is offering and continuously improving innovative Silicon Carbide power rectifiers for high voltage rating applications, with significant advantages.
By GeneSiC Semiconductor 12
Silicon Carbide Power Schottky Diode feature superior surge current capability and positive temperature coefficient of Vf.
MBR40044CT, 400 A Schottky diode features high surge capability and types up to 100 V VRRM.
By GeneSiC Semiconductor 17
MBR60040CT, 600 A silicon power schottky diode features high surge capability and types up to 100 V VRRM.
By GeneSiC Semiconductor 11
1N3214 features high surge capability and types up to 600 V VRRM.