Nexperia offers their P-channel, enhancement-mode field-effect transistor (FET) in a small, SOT23 (TO-236AB), surface-mounted device (SMD), plastic package using trench MOSFET technology.
Benefits
- Low threshold voltage
- Enhanced power dissipation capability of 1096 mW
- Low on-state resistance
- Trench MOSFET technology
Applications
- Relay drivers
- High-speed line drivers
- High-side load switches
- Switching circuits