NE351

NE3510M04-A vs NE3511S02-A vs NE3510M04-T2-A

 
PartNumberNE3510M04-ANE3511S02-ANE3510M04-T2-A
DescriptionRF JFET Transistors L-S Band Lo No AmpRF JFET Transistors X to Ku Band Super Low Noise Amp N-ChRF JFET Transistors L-S Band Lo No Amp
ManufacturerCELCELCEL
Product CategoryRF JFET TransistorsTransistors - FETs, MOSFETs - SingleTransistors - FETs, MOSFETs - Single
RoHSY--
Transistor TypeHFETHFETHFET
TechnologyGaAsGaAsGaAs
Gain16 dB13.5 dB16 dB
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage4 V--
Vgs Gate Source Breakdown Voltage- 3 V--
Id Continuous Drain Current97 mA--
Maximum Operating Temperature+ 150 C+ 125 C+ 150 C
Pd Power Dissipation125 mW--
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseFTSMM-4 (M04)--
Operating Frequency4 GHz12 GHz4 GHz
ProductRF JFET--
TypeGaAs HFET--
BrandCEL--
Forward Transconductance Min70 mS--
Gate Source Cutoff Voltage- 0.7 V- 0.7 V-
NF Noise Figure0.45 dB--
P1dB Compression Point11 dBm--
Product TypeRF JFET Transistors--
Factory Pack Quantity1--
SubcategoryTransistors--
Package Case-S0-2FTSMM-4 (M04)
Pd Power Dissipation-165 mW125 mW
Id Continuous Drain Current-70 mA97 mA
Vds Drain Source Breakdown Voltage-4 V4 V
Forward Transconductance Min-65 mS70 mS
Vgs Gate Source Breakdown Voltage-- 3 V- 3 V
NF Noise Figure-0.3 dB0.45 dB
Packaging--Reel
P1dB Compression Point--11 dBm
Fabricante Parte # Descripción RFQ
CEL
CEL
NE3515S02-T1C-A RF JFET Transistors Super Low Noise Pseudomorphic
NE3510M04-A RF JFET Transistors L-S Band Lo No Amp
NE3512S02-T1C-A RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
NE3512S02-A RF JFET Transistors C to Ku Band Super Low Noise Amp N-Ch
NE3515S02-A RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH
NE3515S02-T1D-A RF JFET Transistors Super Low Noise Pseudomorphic
NE3515S02-T1D-A RF JFET Transistors Super Low Noise Pseudomorphic
NE3514S02-T1C-A RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
NE3510M04-A RF JFET Transistors L-S Band Lo No Amp
NE3511S02-A RF JFET Transistors X to Ku Band Super Low Noise Amp N-Ch
NE3514S02-A RF JFET Transistors K Band Super Low Noise Amp N-Ch
NE3510M04-T2-A RF JFET Transistors L-S Band Lo No Amp
NE3512S02-A RF JFET Transistors C to Ku Band Super Low Noise Amp N-Ch
NE3515S02-A RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH
NE3511S02-T1C-A RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
NE3515S02-T1C-A RF JFET Transistors Super Low Noise Pseudomorphic
NE3512S02-T1C-A RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
NE3513M04-T2-A FET RF 4V 12GHZ M04 4SMD
NE3513M04-T2B-A FET RF 4V 12GHZ M04 4SMD
NE3517S03-T1C-A Trans JFET N-CH 4V 70mA GaAs HJFET 4-Pin Case S-03 T/R
NE3514S02-T1C-A(K) RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, K BAND, SILICON, N-CHANNEL, HETERO-JUNCTION FET
NE3511S02A Trans JFET N-CH 4V 70mA 4-Pin Micro-X (Alt: NE3511S02A)
NE3514S02-T1B-A RF SMALL SIGNAL TRANSISTOR HFET
NE3514S02-T1D-A RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
NE3512S02-T1D-A RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
NE3512S02-T1D-AJT Nuevo y original
NE3510M04 Nuevo y original
NE3510M04-07-T2 Nuevo y original
NE3510M04-T1-A Nuevo y original
NE3510M04-T2 Nuevo y original
NE3510M04T2 Nuevo y original
NE3512S02 Nuevo y original
NE3512S02-T1 Nuevo y original
NE3512S02-T1B Nuevo y original
NE3512S02-T1C Nuevo y original
NE3512S02-T1D Nuevo y original
NE3512S02-T1D-A/JT Nuevo y original
NE3513M04 Nuevo y original
NE3513M04-TB2 Nuevo y original
NE3514S02 Nuevo y original
NE3514S02-T10 Nuevo y original
NE3514S02-T1C Nuevo y original
NE3514S02-T1D Nuevo y original
NE3515S02 Nuevo y original
NE3517S03 Nuevo y original
NE3517S03-T1C Nuevo y original
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