NE3514S02-T1D

NE3514S02-T1D
Mfr. #:
NE3514S02-T1D
Fabricante:
California Eastern Laboratories (CEL)
Descripción:
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NE3514S02-T1D Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
NE3514S02-T, NE3514, NE351, NE35, NE3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
NE3514S02-T1D-A
DISTI # 551-NE3514S02-T1D-A
California Eastern Laboratories (CEL)RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
RoHS: Compliant
0
    NE3514S02-T1D-ARenesas Electronics CorporationRF Small Signal Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, Hetero-junction FET
    RoHS: Compliant
    50000
    • 1000:$0.6200
    • 500:$0.6500
    • 100:$0.6800
    • 25:$0.7100
    • 1:$0.7600
    Imagen Parte # Descripción
    NE3514S02-T1C-A(K)

    Mfr.#: NE3514S02-T1C-A(K)

    OMO.#: OMO-NE3514S02-T1C-A-K--1152

    RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, K BAND, SILICON, N-CHANNEL, HETERO-JUNCTION FET
    NE3514S02-T1B-A

    Mfr.#: NE3514S02-T1B-A

    OMO.#: OMO-NE3514S02-T1B-A-1152

    RF SMALL SIGNAL TRANSISTOR HFET
    NE3514S02-T1D-A

    Mfr.#: NE3514S02-T1D-A

    OMO.#: OMO-NE3514S02-T1D-A-318

    RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
    NE3514S02-T1C-A

    Mfr.#: NE3514S02-T1C-A

    OMO.#: OMO-NE3514S02-T1C-A-CEL

    RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
    NE3514S02-A

    Mfr.#: NE3514S02-A

    OMO.#: OMO-NE3514S02-A-CEL

    RF JFET Transistors K Band Super Low Noise Amp N-Ch
    NE3514S02

    Mfr.#: NE3514S02

    OMO.#: OMO-NE3514S02-1190

    Nuevo y original
    NE3514S02-T10

    Mfr.#: NE3514S02-T10

    OMO.#: OMO-NE3514S02-T10-1190

    Nuevo y original
    NE3514S02-T1C

    Mfr.#: NE3514S02-T1C

    OMO.#: OMO-NE3514S02-T1C-1190

    Nuevo y original
    NE3514S02-T1D

    Mfr.#: NE3514S02-T1D

    OMO.#: OMO-NE3514S02-T1D-1190

    Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    3000
    Ingrese la cantidad:
    El precio actual de NE3514S02-T1D es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,00 US$
    0,00 US$
    10
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    0,00 US$
    100
    0,00 US$
    0,00 US$
    500
    0,00 US$
    0,00 US$
    1000
    0,00 US$
    0,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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