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NE3512S02-T1C-A

NE3512S02-T1C-A
Mfr. #:
NE3512S02-T1C-A
Fabricante:
CEL
Descripción:
RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NE3512S02-T1C-A Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Comité ejecutivo nacional
categoria de producto
FET de RF
embalaje
Carrete
Estilo de montaje
SMD / SMT
Paquete-Estuche
S0-2
Tecnología
GaAs
Tipo transistor
HFET
Ganar
13.5 dB
Disipación de potencia Pd
165 mW
Temperatura máxima de funcionamiento
+ 125 C
Frecuencia de operación
12 GHz
Id-corriente-de-drenaje-continua
70 mA
Vds-Drain-Source-Breakdown-Voltage
4 V
Polaridad del transistor
Canal N
Transconductancia directa-Mín.
55 mS
Vgs-Gate-Source-Breakdown-Voltage
- 3 V
Figura de ruido NF
0.35 dB
Tags
NE3512S02-T, NE3512, NE351, NE35, NE3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans RF MOSFET N-CH 4V 0.07A 4-Pin Case S-02 T/R / HJ-FET NCH 13.5DB S02
***ical
Trans JFET N-CH 4V 70mA HJFET 4-Pin Case S-02 T/R
Parte # Mfg. Descripción Valores Precio
NE3512S02-T1C-A
DISTI # NE3512S02-T1C-ATR-ND		California Eastern Laboratories (CEL)HJ-FET NCH 13.5DB S02
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Limited Supply - Call
    NE3512S02-T1C-A
    DISTI # NE3512S02-T1C-ACT-ND    		California Eastern Laboratories (CEL)HJ-FET NCH 13.5DB S02
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      NE3512S02-T1C-A
      DISTI # NE3512S02-T1C-ADKR-ND      		California Eastern Laboratories (CEL)HJ-FET NCH 13.5DB S02
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        NE3512S02-T1C-ARenesas Electronics Corporation 
        RoHS: Not Compliant        		8000
        • 1000:$0.5900
        • 500:$0.6200
        • 100:$0.6500
        • 25:$0.6800
        • 1:$0.7300
        NE3512S02-T1C-A
        DISTI # 551-NE3512S02-T1C-A        		California Eastern Laboratories (CEL)RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
        RoHS: Compliant        		0
          Imagen Parte # Descripción
          NE3512S02-A

          Mfr.#: NE3512S02-A

          OMO.#: OMO-NE3512S02-A

          		 RF JFET Transistors C to Ku Band Super Low Noise Amp N-Ch
          NE3512S02-T1D-A

          Mfr.#: NE3512S02-T1D-A

          OMO.#: OMO-NE3512S02-T1D-A-318

          		 RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
          NE3512S02-A

          Mfr.#: NE3512S02-A

          OMO.#: OMO-NE3512S02-A-CEL

          		 RF JFET Transistors C to Ku Band Super Low Noise Amp N-Ch
          NE3512S02-T1C-A

          Mfr.#: NE3512S02-T1C-A

          OMO.#: OMO-NE3512S02-T1C-A-CEL

          		 RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
          NE3512S02-T1D-AJT

          Mfr.#: NE3512S02-T1D-AJT

          OMO.#: OMO-NE3512S02-T1D-AJT-1190

          		 Nuevo y original
          NE3512S02

          Mfr.#: NE3512S02

          OMO.#: OMO-NE3512S02-1190

          		 Nuevo y original
          NE3512S02-T1

          Mfr.#: NE3512S02-T1

          OMO.#: OMO-NE3512S02-T1-1190

          		 Nuevo y original
          NE3512S02-T1C

          Mfr.#: NE3512S02-T1C

          OMO.#: OMO-NE3512S02-T1C-1190

          		 Nuevo y original
          NE3512S02-T1D

          Mfr.#: NE3512S02-T1D

          OMO.#: OMO-NE3512S02-T1D-1190

          		 Nuevo y original
          NE3512S02-T1D-A/JT

          Mfr.#: NE3512S02-T1D-A/JT

          OMO.#: OMO-NE3512S02-T1D-A-JT-1190

          		 Nuevo y original
          Disponibilidad
          Valores:
          Available
          En orden:
          1000
          Ingrese la cantidad:
          El precio actual de NE3512S02-T1C-A es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
          Precio de referencia (USD)
          Cantidad
          Precio unitario
          Ext. Precio
          1
          0,88 US$
          0,88 US$
          10
          0,84 US$
          8,41 US$
          100
          0,80 US$
          79,65 US$
          500
          0,75 US$
          376,15 US$
          1000
          0,71 US$
          708,00 US$
          Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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