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NE3510M04-A

NE3510M04-A
Mfr. #:
NE3510M04-A
Fabricante:
CEL
Descripción:
RF JFET Transistors L-S Band Lo No Amp
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NE3510M04-A Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NE3510M04-A DatasheetNE3510M04-A Datasheet (P4-P6)NE3510M04-A Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
CEL
Categoria de producto:
Transistores RF JFET
RoHS:
Y
Tipo de transistor:
HFET
Tecnología:
GaAs
Ganar:
16 dB
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
4 V
Vgs - Voltaje de ruptura de puerta-fuente:
- 3 V
Id - Corriente de drenaje continua:
97 mA
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
125 mW
Estilo de montaje:
SMD / SMT
Paquete / Caja:
FTSMM-4 (M04)
Frecuencia de operación:
4 GHz
Producto:
RF JFET
Escribe:
GaAs HFET
Marca:
CEL
Transconductancia directa - Mín .:
70 mS
Voltaje de corte de puerta-fuente:
- 0.7 V
NF - Figura de ruido:
0.45 dB
P1dB - Punto de compresión:
11 dBm
Tipo de producto:
Transistores RF JFET
Cantidad de paquete de fábrica:
1
Subcategoría:
Transistores
Tags
NE3510, NE351, NE35, NE3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans JFET N-CH 4V 97mA 4-Pin Thin-Type Super Mini-Mold
***i-Key
FET RF 4V 4GHZ M04
Parte # Mfg. Descripción Valores Precio
NE3510M04-A
DISTI # NE3510M04-A-ND		California Eastern Laboratories (CEL)FET RF 4V 4GHZ M04
RoHS: Compliant
Min Qty: 120
Container: Bulk		Limited Supply - Call
    NE3510M04-A
    DISTI # 551-NE3510M04-A    		California Eastern Laboratories (CEL)RF JFET Transistors L-S Band Lo No Amp
    RoHS: Compliant    		0
      Imagen Parte # Descripción
      NE3512S02-T1C-A

      Mfr.#: NE3512S02-T1C-A

      OMO.#: OMO-NE3512S02-T1C-A

      		 RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
      NE3514S02-T1C-A(K)

      Mfr.#: NE3514S02-T1C-A(K)

      OMO.#: OMO-NE3514S02-T1C-A-K--1152

      		 RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, K BAND, SILICON, N-CHANNEL, HETERO-JUNCTION FET
      NE3514S02-T1B-A

      Mfr.#: NE3514S02-T1B-A

      OMO.#: OMO-NE3514S02-T1B-A-1152

      		 RF SMALL SIGNAL TRANSISTOR HFET
      NE3510M04-T2-A

      Mfr.#: NE3510M04-T2-A

      OMO.#: OMO-NE3510M04-T2-A-CEL

      		 RF JFET Transistors L-S Band Lo No Amp
      NE3515S02-A

      Mfr.#: NE3515S02-A

      OMO.#: OMO-NE3515S02-A-CEL

      		 RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH
      NE3515S02-T1C-A

      Mfr.#: NE3515S02-T1C-A

      OMO.#: OMO-NE3515S02-T1C-A-CEL

      		 RF JFET Transistors Super Low Noise Pseudomorphic
      NE3512S02-T1

      Mfr.#: NE3512S02-T1

      OMO.#: OMO-NE3512S02-T1-1190

      		 Nuevo y original
      NE3513M04

      Mfr.#: NE3513M04

      OMO.#: OMO-NE3513M04-1190

      		 Nuevo y original
      NE3514S02-T1C

      Mfr.#: NE3514S02-T1C

      OMO.#: OMO-NE3514S02-T1C-1190

      		 Nuevo y original
      NE3514S02-T1D

      Mfr.#: NE3514S02-T1D

      OMO.#: OMO-NE3514S02-T1D-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      1500
      Ingrese la cantidad:
      El precio actual de NE3510M04-A es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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