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NE3512S02-A

NE3512S02-A
Mfr. #:
NE3512S02-A
Fabricante:
CEL
Descripción:
RF JFET Transistors C to Ku Band Super Low Noise Amp N-Ch
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NE3512S02-A Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NE3512S02-A DatasheetNE3512S02-A Datasheet (P4-P6)NE3512S02-A Datasheet (P7-P8)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
CEL
Categoria de producto:
Transistores RF JFET
RoHS:
Y
Tipo de transistor:
HFET
Tecnología:
GaAs
Ganar:
13.5 dB
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
4 V
Vgs - Voltaje de ruptura de puerta-fuente:
- 3 V
Id - Corriente de drenaje continua:
70 mA
Temperatura máxima de funcionamiento:
+ 125 C
Pd - Disipación de energía:
165 mW
Estilo de montaje:
SMD / SMT
Paquete / Caja:
S0-2
Frecuencia de operación:
12 GHz
Producto:
RF JFET
Escribe:
GaAs HFET
Marca:
CEL
Transconductancia directa - Mín .:
55 mS
Voltaje de corte de puerta-fuente:
4 V
NF - Figura de ruido:
0.35 dB
Tipo de producto:
Transistores RF JFET
Cantidad de paquete de fábrica:
1
Subcategoría:
Transistores
Tags
NE3512, NE351, NE35, NE3
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans JFET N-CH 4V 70mA 4-Pin Micro-X
***i-Key
HJ-FET NCH 13.5DB S02
Parte # Mfg. Descripción Valores Precio
NE3512S02-A
DISTI # NE3512S02-A-ND		California Eastern Laboratories (CEL)HJ-FET NCH 13.5DB S02
RoHS: Compliant
Min Qty: 90
Container: Bulk		Limited Supply - Call
    NE3512S02-A
    DISTI # 551-NE3512S02-A    		California Eastern Laboratories (CEL)RF JFET Transistors C to Ku Band Super Low Noise Amp N-Ch
    RoHS: Compliant    		0
      Imagen Parte # Descripción
      NE3515S02-T1C-A

      Mfr.#: NE3515S02-T1C-A

      OMO.#: OMO-NE3515S02-T1C-A

      		 RF JFET Transistors Super Low Noise Pseudomorphic
      NE3510M04-A

      Mfr.#: NE3510M04-A

      OMO.#: OMO-NE3510M04-A

      		 RF JFET Transistors L-S Band Lo No Amp
      NE3515S02-T1D-A

      Mfr.#: NE3515S02-T1D-A

      OMO.#: OMO-NE3515S02-T1D-A

      		 RF JFET Transistors Super Low Noise Pseudomorphic
      NE3510M04-A

      Mfr.#: NE3510M04-A

      OMO.#: OMO-NE3510M04-A-CEL

      		 RF JFET Transistors L-S Band Lo No Amp
      NE3511S02-A

      Mfr.#: NE3511S02-A

      OMO.#: OMO-NE3511S02-A-CEL

      		 RF JFET Transistors X to Ku Band Super Low Noise Amp N-Ch
      NE3512S02-T1C

      Mfr.#: NE3512S02-T1C

      OMO.#: OMO-NE3512S02-T1C-1190

      		 Nuevo y original
      NE3512S02-T1D

      Mfr.#: NE3512S02-T1D

      OMO.#: OMO-NE3512S02-T1D-1190

      		 Nuevo y original
      NE3514S02-T10

      Mfr.#: NE3514S02-T10

      OMO.#: OMO-NE3514S02-T10-1190

      		 Nuevo y original
      NE3514S02-T1C

      Mfr.#: NE3514S02-T1C

      OMO.#: OMO-NE3514S02-T1C-1190

      		 Nuevo y original
      NE3517S03

      Mfr.#: NE3517S03

      OMO.#: OMO-NE3517S03-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      3000
      Ingrese la cantidad:
      El precio actual de NE3512S02-A es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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