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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| NE3514S02-A DISTI # C1S525000486338 | Renesas Electronics Corporation | Trans JFET N-CH 4V 70mA HJFET 4-Pin Case S02 RoHS: Compliant | 130 |
|
| NE3514S02-A DISTI # NE3514S02-A-ND | California Eastern Laboratories (CEL) | HJ-FET NCH 10DB S02 RoHS: Compliant Min Qty: 70 Container: * | Limited Supply - Call | |
| NE3514S02-A DISTI # 551-NE3514S02-A | California Eastern Laboratories (CEL) | RF JFET Transistors K Band Super Low Noise Amp N-Ch RoHS: Compliant | 0 |
| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: NE3515S02-A OMO.#: OMO-NE3515S02-A |
RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH |
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Mfr.#: NE3514S02-T1C-A(K) OMO.#: OMO-NE3514S02-T1C-A-K--1152 |
RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, K BAND, SILICON, N-CHANNEL, HETERO-JUNCTION FET |
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Mfr.#: NE3512S02-A OMO.#: OMO-NE3512S02-A-CEL |
RF JFET Transistors C to Ku Band Super Low Noise Amp N-Ch |
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Mfr.#: NE3511S02-T1C-A OMO.#: OMO-NE3511S02-T1C-A-CEL |
RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET |
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Mfr.#: NE3510M04-07-T2 OMO.#: OMO-NE3510M04-07-T2-1190 |
Nuevo y original |
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Mfr.#: NE3510M04-T1-A OMO.#: OMO-NE3510M04-T1-A-1190 |
Nuevo y original |
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Mfr.#: NE3512S02-T1C OMO.#: OMO-NE3512S02-T1C-1190 |
Nuevo y original |
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Mfr.#: NE3512S02-T1D OMO.#: OMO-NE3512S02-T1D-1190 |
Nuevo y original |
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Mfr.#: NE3513M04-TB2 OMO.#: OMO-NE3513M04-TB2-1190 |
Nuevo y original |
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Mfr.#: NE3517S03-T1C-A OMO.#: OMO-NE3517S03-T1C-A-CEL |
Trans JFET N-CH 4V 70mA GaAs HJFET 4-Pin Case S-03 T/R |
