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| PartNumber | SI2333DDS-T1-GE3 | SI2333CDS-T1-E3 | SI2333CDS-T1-GE3 |
| Description | MOSFET -12V Vds 8V Vgs SOT-23 | MOSFET 12V 5.1A 2.5W 35mohm @ 4.5V | MOSFET 12V 5.1A 2.5W 35 mohms @ 4.5V |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 12 V | 12 V | 12 V |
| Id Continuous Drain Current | 6 A | 7.1 A | 7.1 A |
| Rds On Drain Source Resistance | 23 mOhms | 35 mOhms | 35 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 400 mV | 400 mV |
| Vgs Gate Source Voltage | 8 V | 4.5 V | 4.5 V |
| Qg Gate Charge | 35 nC | 15 nC | 15 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 1.7 W | 2.5 W | 2.5 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 1.45 mm | 1.45 mm | 1.45 mm |
| Length | 2.9 mm | 2.9 mm | 2.9 mm |
| Series | SI2 | SI2 | SI2 |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Width | 1.6 mm | 1.6 mm | 1.6 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 18 S | 18.5 S | 18.5 S |
| Fall Time | 20 ns | 12 ns | 12 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 24 ns | 35 ns | 35 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 45 ns | 45 ns | 45 ns |
| Typical Turn On Delay Time | 26 ns | 13 ns | 13 ns |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |
| Part # Aliases | - | SI2333CDS-E3 | SI2333CDS-GE3 |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI2333DDS-T1-GE3 | MOSFET -12V Vds 8V Vgs SOT-23 | |
| SI2337DS-T1-E3 | MOSFET -80V Vds 20V Vgs SOT-23 | ||
| SI2333CDS-T1-E3 | MOSFET 12V 5.1A 2.5W 35mohm @ 4.5V | ||
| SI2337DS-T1-GE3 | MOSFET -80V Vds 20V Vgs SOT-23 | ||
| SI2338DS-T1-GE3 | MOSFET 30V Vds 20V Vgs SOT-23 | ||
| SI2333CDS-T1-GE3 | MOSFET 12V 5.1A 2.5W 35 mohms @ 4.5V | ||
| SI2333DS-T1-GE3 | MOSFET 12V 5.3A 1.25W 32mohm @ 4.5V | ||
| SI2336DS-T1-GE3 | MOSFET 30V Vds 8V Vgs SOT-23 | ||
| SI2333DS-T1-E3 | MOSFET 12V 5.3A 1.25W 32 mohms @ 4.5V | ||
| SI2335DS-T1-GE3 | MOSFET RECOMMENDED ALT 78-SI2333DDS-T1-GE3 | ||
| SI2334DS-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI2336DS-T1-GE3 | ||
| SI2335DS-T1-E3 | MOSFET RECOMMENDED ALT 78-SI2333DDS-T1-GE3 | ||
Micro Commercial Components (MCC) |
SI2333-TP | MOSFET P-Channel MOSFET, SOT-23 package | |
Vishay |
SI2331DS-T1-E3 | MOSFET P-CH 12V 3.2A SOT23-3 | |
| SI2331DS-T1-GE3 | MOSFET P-CH 12V 3.2A SOT23-3 | ||
| SI2333CDS-T1-E3 | MOSFET P-CH 12V 7.1A SOT23-3 | ||
| SI2333CDS-T1-GE3 | MOSFET P-CH 12V 7.1A SOT-23 | ||
| SI2333DDS-T1-GE3 | MOSFET P-CH 12V 6A SOT23 | ||
| SI2333DS-T1-E3 | MOSFET P-CH 12V 4.1A SOT23-3 | ||
| SI2333DS-T1-GE3 | MOSFET P-CH 12V 4.1A SOT23-3 | ||
| SI2335DS-T1-E3 | MOSFET P-CH 12V 3.2A SOT23 | ||
| SI2335DS-T1-GE3 | MOSFET P-CH 12V 3.2A SOT23-3 | ||
| SI2336DS-T1-GE3 | MOSFET N-CH 30V 5.2A SOT-23 | ||
| SI2337DS-T1-E3 | MOSFET P-CH 80V 2.2A SOT23-3 | ||
| SI2337DS-T1-GE3 | MOSFET P-CH 80V 2.2A SOT23-3 | ||
| SI2338DS-T1-GE3 | MOSFET N-CH 30V 6A SOT23 | ||
| SI2334DS-T1-GE3 | MOSFET N-CH 30V 4.9A SOT-23 | ||
| SI2333 | Nuevo y original | ||
| SI2333ADS-T1-GE3 | Nuevo y original | ||
| SI2333CDS | Nuevo y original | ||
| SI2333CDS , MAX6463XR16 | Nuevo y original | ||
| SI2333CDS-T1-GE3/O3XXX | Nuevo y original | ||
| SI2333CDS-TI-E3 | Nuevo y original | ||
| SI2333CDS-TI-GE3 | Nuevo y original | ||
| SI2333DDS | Nuevo y original | ||
| SI2333DDS-T1 | Nuevo y original | ||
| SI2333DDS-T1-E3 | Nuevo y original | ||
| SI2333DS | MOSFET Transistor, P-Channel, TO-236 | ||
| SI2333DS-T1 | MOSFET 12V 5.3A 1.25W 32mohm @ 4.5V | ||
| SI2335DS-T1 | MOSFET RECOMMENDED ALT 781-SI2315BDS-GE3 | ||
| SI2336DS | Nuevo y original | ||
| SI2337DS | Nuevo y original | ||
| SI2338DS-T1-E3 | Nuevo y original | ||
| SI2338DS-T1-GE3 (VISHAY) | Nuevo y original | ||
| SI2333CDS-T1-E3-CUT TAPE | Nuevo y original | ||
| SI2333CDS-T1-GE3-CUT TAPE | Nuevo y original | ||
| SI2333DDS-T1-GE3-CUT TAPE | Nuevo y original | ||
| SI2333DS-T1-E3-CUT TAPE | Nuevo y original |