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SI2337DS-T1-GE3

SI2337DS-T1-GE3
Mfr. #:
SI2337DS-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET -80V Vds 20V Vgs SOT-23
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI2337DS-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2337DS-T1-GE3 DatasheetSI2337DS-T1-GE3 Datasheet (P4-P6)SI2337DS-T1-GE3 Datasheet (P7-P9)SI2337DS-T1-GE3 Datasheet (P10)
ECAD Model:
Más información:
SI2337DS-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-23-3
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Altura:
1.45 mm
Longitud:
2.9 mm
Serie:
SI2
Ancho:
1.6 mm
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Parte # Alias:
SI2337DS-GE3
Unidad de peso:
0.000282 oz
Tags
SI2337, SI233, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***-Wing Technology
In a Pack of 20, P-Channel MOSFET, 1.75 A, 80 V, 3-Pin SOT-23 Vishay SI2337DS-T1-GE3
*** Source Electronics
Trans MOSFET P-CH 80V 2.2A 3-Pin SOT-23 T/R / MOSFET P-CH 80V 2.2A SOT23-3
***enic
80V 2.2A 270m´Î@10V1.2A 760mW 4V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
***ure Electronics
Single P-Channel 80 V 0.27 Ohms Surface Mount Power Mosfet - TO-236
***nsix Microsemi
Small Signal Field-Effect Transistor, 0.0012A I(D), 80V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
***nell
MOSFET, P CH, 80V, 2.2A, TO-236; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.2A; Drain Source Voltage Vds:-80V; On Resistance Rds(on):0.216ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:760mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-236; No. of Pins:3; Operating Temperature Range:-55°C to +150°C
***(Formerly Allied Electronics)
MOSFET; P-CH; Vds -60V; Vgs +/- 20V; Rds(on) 285mohm; Id 1.6A; SOT-23; Pd 1.7W
***ure Electronics
SI2309CDS Series P-Channel 60 V 0.345 Ohm Power MosFet Surface Mount - SOT-23-3
***et
Trans MOSFET P-CH 60V 1.2A 3-Pin SOT-23 T/R
***enic
60V 1.6A 345m¦¸@10V,1.25A 1W 3V@250¦ÌA P Channel SOT-23(SOT-23-3) MOSFETs ROHS
*** Stop Electro
Small Signal Field-Effect Transistor, 1.6A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***ark
Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Power Dissipation:1.7W; No. of Pins:3Pins RoHS Compliant: No
***ure Electronics
P-Channel 60 V 0.345 Ohm 1.7 W Surface Mount Mosfet - SOT-23-3
***p One Stop
Trans MOSFET P-CH 60V 1.2A Automotive 3-Pin SOT-23 T/R
***roFlash
Small Signal Field-Effect Transistor, 1.6A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***ark
Transistor Polarity:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.2A; On Resistance Rds(On):0.285Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V Rohs Compliant: No
*** Source Electronics
Trans MOSFET N-CH 100V 2.3A 3-Pin SOT-23 T/R / MOSFET N-CH 100V 2.3A SOT-23
***ure Electronics
Single N-Channel 100 V 0.278 Ohm 5.8 nC 1.25 W Silicon SMT Mosfet - SOT-23
***icontronic
Small Signal Field-Effect Transistor, 2.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***ure Electronics
ZXMN10A07F Series 100 V 0.7 Ohm N-Channel Enhancement Mode MOSFET -SOT-23
***et
Trans MOSFET N-CH 100V 0.8A 3-Pin SOT-23 T/R
***(Formerly Allied Electronics)
MOSFET N-Channel 100V 0.8A SOT23 | Diodes Inc ZXMN10A07FTA
***nell
MOSFET, N CH, 100V, 0.7A, 0.625W; Transistor Polarity: N Channel; Continuous Drain Current Id: 700mA; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 625mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
*** Source Electronics
MOSFET N-CH 60V 1.3A SOT23F / Current Limit SW 1-IN 1-OUT 0V to 5.5V 2.2A 3-Pin SOT-23F T/R
***ure Electronics
ZXMS6004 60 V 0.35 Ohm N-Channel Self Protected INTELLIFETTM MOSFET - SOT-23F
***(Formerly Allied Electronics)
MOSFET IntelliFET N-ch 60V 1.3A SOT23F | Diodes Inc ZXMS6004FFTA
***ment14 APAC
MOSFET,N CH,60V,1.3A,SOT23F; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Source Voltage Vds:60V; On Resistance
***ark
Mosfet, N Channel, 60V, 2A , Sot-23; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:5V; Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Diodes Inc. ZXMS6004FFTA
***nell
MOSFET,N CH,60V,1.3A,SOT23F; Transistor Polarity: N Channel; Continuous Drain Current Id: 2A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.35ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 830mW; Transistor Case Style: SOT-23F; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 2A; Operating Temperature Min: -40°C; Operating Temperature Range: -40°C to +150°C; Voltage Vgs Max: 6V
*** Source Electronics
Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R / MOSFET N-CH 60V 0.25A SOT23-3
***ure Electronics
N-Channel 60 V 4 Ohm MosFet Surface Mount - SOT-23-3
***ark
Mosfet, N-Ch, 60V, 0.25A, Sot-23 Rohs Compliant: Yes |Diodes Inc. 2N7002E-7-F
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Parte # Mfg. Descripción Valores Precio
SI2337DS-T1-GE3
DISTI # V72:2272_09216813		Vishay IntertechnologiesTrans MOSFET P-CH 80V 1.2A 3-Pin SOT-23 T/R
RoHS: Compliant		1420
  • 1000:$0.4149
  • 500:$0.5490
  • 250:$0.5731
  • 100:$0.6367
  • 25:$0.7453
  • 10:$0.9110
  • 1:$1.0989
SI2337DS-T1-GE3
DISTI # V36:1790_09216813		Vishay IntertechnologiesTrans MOSFET P-CH 80V 1.2A 3-Pin SOT-23 T/R
RoHS: Compliant		0
  • 3000:$0.3954
SI2337DS-T1-GE3
DISTI # SI2337DS-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 80V 2.2A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3245In Stock
  • 1000:$0.4704
  • 500:$0.5959
  • 100:$0.7214
  • 10:$0.9250
  • 1:$1.0400
SI2337DS-T1-GE3
DISTI # SI2337DS-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 80V 2.2A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3245In Stock
  • 1000:$0.4704
  • 500:$0.5959
  • 100:$0.7214
  • 10:$0.9250
  • 1:$1.0400
SI2337DS-T1-GE3
DISTI # SI2337DS-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 80V 2.2A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 15000:$0.3898
  • 6000:$0.4050
  • 3000:$0.4263
SI2337DS-T1-GE3
DISTI # 33791495		Vishay IntertechnologiesTrans MOSFET P-CH 80V 1.2A 3-Pin SOT-23 T/R
RoHS: Compliant		18000
  • 3000:$0.2700
SI2337DS-T1-GE3
DISTI # 32316383		Vishay IntertechnologiesTrans MOSFET P-CH 80V 1.2A 3-Pin SOT-23 T/R
RoHS: Compliant		3000
  • 3000:$0.6234
SI2337DS-T1-GE3
DISTI # 29542623		Vishay IntertechnologiesTrans MOSFET P-CH 80V 1.2A 3-Pin SOT-23 T/R
RoHS: Compliant		1420
  • 18:$1.0989
SI2337DS-T1-GE3
DISTI # SI2337DS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 80V 1.2A 3-Pin SOT-23 T/R (Alt: SI2337DS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 3000
  • 150000:$0.3300
  • 75000:$0.3356
  • 30000:$0.3414
  • 15000:$0.3536
  • 9000:$0.3667
  • 6000:$0.3808
  • 3000:$0.3960
SI2337DS-T1-GE3
DISTI # SI2337DS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 80V 1.2A 3-Pin SOT-23 T/R (Alt: SI2337DS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 9000
  • 30000:€0.3119
  • 18000:€0.3349
  • 12000:€0.3629
  • 6000:€0.4219
  • 3000:€0.6179
SI2337DS-T1-GE3
DISTI # SI2337DS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 80V 1.2A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2337DS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.3709
  • 18000:$0.3819
  • 12000:$0.3919
  • 6000:$0.4089
  • 3000:$0.4219
SI2337DS-T1-GE3
DISTI # SI2337DS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 80V 1.2A 3-Pin SOT-23 T/R - Cut TR (SOS) (Alt: SI2337DS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Cut Tape		Americas - 0
  • 1:$0.5273
SI2337DS-T1-GE3
DISTI # 26R1861		Vishay IntertechnologiesTrans MOSFET P-CH 80V 1.2A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 26R1861)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1000:$0.5440
  • 500:$0.6900
  • 250:$0.7460
  • 100:$0.8010
  • 50:$0.9240
  • 25:$1.0500
  • 1:$1.2800
SI2337DS-T1-GE3
DISTI # 26R1861		Vishay IntertechnologiesP CHANNEL MOSFET, -80V, 2.2A TO-236,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.2A,Drain Source Voltage Vds:-80V,On Resistance Rds(on):0.216ohm,Rds(on) Test Voltage Vgs:-6V,Threshold Voltage Vgs:-4V RoHS Compliant: Yes2264
  • 1:$0.3420
  • 25:$0.3420
  • 50:$0.3420
  • 100:$0.3420
  • 250:$0.3420
  • 500:$0.3420
  • 1000:$0.3420
SI2337DS-T1-GE3
DISTI # 15R4916		Vishay IntertechnologiesP CHANNEL MOSFET, -80V, 2.2A TO-236,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.2A,Drain Source Voltage Vds:-80V,On Resistance Rds(on):0.216ohm,Rds(on) Test Voltage Vgs:-6V,Threshold Voltage Vgs:-4V RoHS Compliant: Yes0
  • 10000:$0.3690
  • 6000:$0.3770
  • 4000:$0.3920
  • 2000:$0.4350
  • 1000:$0.4790
  • 1:$0.4990
SI2337DS-T1-GE3.
DISTI # 30AC0142		Vishay IntertechnologiesP CHANNEL MOSFET, -80V, 2.2A TO-236,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.2A,Drain Source Voltage Vds:-80V,On Resistance Rds(on):0.216ohm,Rds(on) Test Voltage Vgs:-6V,Threshold Voltage Vgs:-4V RoHS Compliant: No0
  • 10000:$0.3690
  • 6000:$0.3770
  • 4000:$0.3920
  • 2000:$0.4350
  • 1000:$0.4790
  • 1:$0.4990
SI2337DS-T1-GE3
DISTI # 70616156		Vishay SiliconixSI2337DS-T1-GE3 P-channel MOSFET Transistor,1.75 A,80 V,3-Pin TO-236
RoHS: Compliant		0
  • 300:$0.6800
  • 600:$0.6300
  • 1500:$0.5800
  • 3000:$0.5200
SI2337DS-T1-GE3
DISTI # 781-SI2337DS-GE3		Vishay IntertechnologiesMOSFET -80V Vds 20V Vgs SOT-23
RoHS: Compliant		14422
  • 1:$1.0100
  • 10:$0.8350
  • 100:$0.6400
  • 500:$0.5510
  • 1000:$0.4340
  • 3000:$0.4050
  • 6000:$0.3850
  • 9000:$0.3770
SI2337DS-T1-GE3Vishay IntertechnologiesSingle P-Channel 80 V 0.27 Ohms Surface Mount Power Mosfet - TO-236
RoHS: Compliant		6000Reel
  • 3000:$0.3800
SI2337DS-T1-GE3
DISTI # 8123123		Vishay IntertechnologiesTRANS MOSFET P-CH 80V 1.2A 3-PIN, PK480
  • 3000:£0.3510
  • 1500:£0.3800
  • 600:£0.4820
  • 300:£0.6060
  • 20:£0.7900
SI2337DS-T1-GE3
DISTI # 8123123P		Vishay IntertechnologiesTRANS MOSFET P-CH 80V 1.2A 3-PIN, RL5300
  • 3000:£0.3510
  • 1500:£0.3800
  • 600:£0.4820
  • 300:£0.6060
SI2337DS-T1-GE3
DISTI # SI2337DS-T1-GE3		Vishay IntertechnologiesTransistor: P-MOSFET,unipolar,-80V,-1.75A,1.6W,SOT23499
  • 500:$0.3900
  • 100:$0.4300
  • 25:$0.4700
  • 5:$0.5300
  • 1:$0.6000
SI2337DS-T1-GE3Vishay IntertechnologiesMOSFET -80V Vds 20V Vgs SOT-23
RoHS: Compliant		Americas - 3000
    SI2337DS-T1-GE3
    DISTI # XSKDRABV0026474    		Vishay Intertechnologies 
    RoHS: Compliant    		6000 in Stock0 on Order
    • 6000:$0.4253
    • 3000:$0.4557
    SI2337DS-T1-GE3
    DISTI # XSFP00000118596    		Vishay Siliconix 
    RoHS: Compliant    		6000 in Stock0 on Order
    • 6000:$0.5067
    • 3000:$0.5429
    SI2337DS-T1-GE3
    DISTI # 2101437    		Vishay IntertechnologiesMOSFET, P CH, 80V, 2.2A, TO-236
    RoHS: Compliant    		577
    • 3000:$0.6430
    • 1000:$0.6560
    • 500:$0.8320
    • 100:$0.9660
    • 5:$1.2600
    SI2337DS-T1-GE3
    DISTI # 2101437    		Vishay IntertechnologiesMOSFET, P CH, 80V, 2.2A, TO-2364239
    • 500:£0.4290
    • 250:£0.4640
    • 100:£0.4990
    • 10:£0.7070
    • 1:£0.8980
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    Disponibilidad
    Valores:
    13
    En orden:
    1996
    Ingrese la cantidad:
    El precio actual de SI2337DS-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,01 US$
    1,01 US$
    10
    0,84 US$
    8,35 US$
    100
    0,64 US$
    64,00 US$
    500
    0,55 US$
    275,50 US$
    1000
    0,43 US$
    434,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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