SI2333DS-T1-GE3

SI2333DS-T1-GE3
Mfr. #:
SI2333DS-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 12V 5.3A 1.25W 32mohm @ 4.5V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI2333DS-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2333DS-T1-GE3 DatasheetSI2333DS-T1-GE3 Datasheet (P4-P6)SI2333DS-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Más información:
SI2333DS-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-23-3
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Altura:
1.45 mm
Longitud:
2.9 mm
Serie:
SI2
Ancho:
1.6 mm
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Parte # Alias:
SI2333DS-GE3
Unidad de peso:
0.000282 oz
Tags
SI2333DS-T, SI2333DS, SI2333D, SI2333, SI233, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R
***i-Key
MOSFET P-CH 12V 4.1A SOT23-3
***
P-CHANNEL 12-V (D-S) MOSFET
***ment14 APAC
P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.1A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:750mW
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Parte # Mfg. Descripción Valores Precio
SI2333DS-T1-GE3
DISTI # V36:1790_09216809
Vishay IntertechnologiesTrans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R
RoHS: Compliant
0
  • 3000000:$0.3409
  • 1500000:$0.3410
  • 300000:$0.3506
  • 30000:$0.3652
  • 3000:$0.3675
SI2333DS-T1-GE3
DISTI # SI2333DS-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 12V 4.1A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5850In Stock
  • 1000:$0.4056
  • 500:$0.5137
  • 100:$0.6219
  • 10:$0.7980
  • 1:$0.8900
SI2333DS-T1-GE3
DISTI # SI2333DS-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 12V 4.1A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5850In Stock
  • 1000:$0.4056
  • 500:$0.5137
  • 100:$0.6219
  • 10:$0.7980
  • 1:$0.8900
SI2333DS-T1-GE3
DISTI # SI2333DS-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 12V 4.1A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 30000:$0.3325
  • 15000:$0.3360
  • 6000:$0.3491
  • 3000:$0.3675
SI2333DS-T1-GE3
DISTI # SI2333DS-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2333DS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.3199
  • 18000:$0.3289
  • 12000:$0.3379
  • 6000:$0.3529
  • 3000:$0.3629
SI2333DS-T1-GE3
DISTI # 84R8032
Vishay IntertechnologiesTrans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 84R8032)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack
Americas - 0
  • 1000:$0.4690
  • 500:$0.5950
  • 250:$0.6440
  • 100:$0.6910
  • 50:$0.7960
  • 25:$0.9010
  • 1:$1.1000
SI2333DS-T1-GE3
DISTI # 15R4914
Vishay IntertechnologiesP CH MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.1A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):25mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs Typ:-1V,Power Dissipation Pd:750mW RoHS Compliant: Yes0
  • 10000:$0.3180
  • 6000:$0.3250
  • 4000:$0.3380
  • 2000:$0.3750
  • 1000:$0.4130
  • 1:$0.4300
SI2333DS-T1-GE3
DISTI # 84R8032
Vishay IntertechnologiesP CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.1A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,Power Dissipation Pd:750mW RoHS Compliant: Yes1670
  • 1000:$0.4740
  • 500:$0.6010
  • 250:$0.6500
  • 100:$0.6990
  • 50:$0.8040
  • 25:$0.9100
  • 1:$1.1000
SI2333DS-T1-GE3
DISTI # 781-SI2333DS-GE3
Vishay IntertechnologiesMOSFET 12V 5.3A 1.25W 32mohm @ 4.5V
RoHS: Compliant
4820
  • 1:$0.8700
  • 10:$0.7200
  • 100:$0.5520
  • 500:$0.4750
  • 1000:$0.3740
  • 3000:$0.3490
  • 6000:$0.3320
  • 9000:$0.3250
SI2333DS-T1-GE3Vishay IntertechnologiesMOSFET 12V 5.3A 1.25W 32mohm @ 4.5V
RoHS: Compliant
Americas -
    SI2333DS-T1-GE3
    DISTI # 1867182
    Vishay IntertechnologiesP CH MOSFET
    RoHS: Compliant
    1260
    • 250:£0.5890
    • 100:£0.6330
    • 50:£0.7280
    • 25:£0.8250
    • 1:£0.9960
    SI2333DS-T1-GE3
    DISTI # 1867182
    Vishay IntertechnologiesP CHANNEL MOSFET
    RoHS: Compliant
    1670
    • 3000:$0.5540
    • 1000:$0.5650
    • 500:$0.7170
    • 100:$0.8330
    • 10:$1.0900
    • 1:$1.3100
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    Disponibilidad
    Valores:
    Available
    En orden:
    1987
    Ingrese la cantidad:
    El precio actual de SI2333DS-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,87 US$
    0,87 US$
    10
    0,72 US$
    7,20 US$
    100
    0,55 US$
    55,20 US$
    500
    0,48 US$
    237,50 US$
    1000
    0,37 US$
    374,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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