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SI2333CDS-T1-GE3

SI2333CDS-T1-GE3
Mfr. #:
SI2333CDS-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET P-CH 12V 7.1A SOT-23
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI2333CDS-T1-GE3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
SI2333CDS-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET - Single
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SI2333CDS-GE3
Unidad de peso
0.050717 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-236-3, SC-59, SOT-23-3
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
SOT-23-3 (TO-236)
Configuración
Único
Tipo FET
Canal P MOSFET, óxido metálico
Potencia máxima
2.5W
Tipo transistor
1 P-Channel
Drenaje-a-fuente-voltaje-Vdss
12V
Entrada-Capacitancia-Ciss-Vds
1225pF @ 6V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
7.1A (Tc)
Rds-On-Max-Id-Vgs
35 mOhm @ 5.1A, 4.5V
Vgs-th-Max-Id
1V @ 250μA
Puerta-Carga-Qg-Vgs
25nC @ 4.5V
Disipación de potencia Pd
1.25 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
35 ns
Hora de levantarse
35 ns
Vgs-Puerta-Fuente-Voltaje
8 V
Id-corriente-de-drenaje-continua
5.1 A
Vds-Drain-Source-Breakdown-Voltage
- 12 V
Resistencia a la fuente de desagüe de Rds
35 mOhms
Polaridad del transistor
P-Channel
Tiempo de retardo de apagado típico
45 ns
Tiempo de retardo de encendido típico
13 ns
Modo de canal
Mejora
Tags
SI2333CDS-T1-G, SI2333CDS-T1, SI2333CDS-T, SI2333C, SI2333, SI233, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
P-Channel 12 V 0.039 Ohm 2.5 W Surface Mount Power Mosfet - SOT-23-3
***ark
Transistor Polarity:p Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:7.1A; On Resistance Rds(On):0.0285Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Msl:- Rohs Compliant: No
***ment14 APAC
MOSFET, P-CH, 12V, 7.1A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.1A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):28.5mohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-7.1A; Power Dissipation Pd:2.5W; Voltage Vgs Max:8V
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Parte # Mfg. Descripción Valores Precio
SI2333CDS-T1-GE3
DISTI # 30603083		Vishay IntertechnologiesTrans MOSFET P-CH 12V 5.1A 3-Pin SOT-23 T/R
RoHS: Compliant		822
  • 250:$0.3570
  • 100:$0.4029
  • 50:$0.4628
  • 10:$0.5954
  • 9:$3.1237
SI2333CDS-T1-GE3
DISTI # SI2333CDS-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 12V 7.1A SOT-23
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.1819
SI2333CDS-T1-GE3
DISTI # SI2333CDS-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 12V 7.1A SOT-23
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.2055
  • 500:$0.2660
  • 100:$0.3627
  • 10:$0.4840
  • 1:$0.5700
SI2333CDS-T1-GE3
DISTI # SI2333CDS-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 12V 7.1A SOT-23
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.2055
  • 500:$0.2660
  • 100:$0.3627
  • 10:$0.4840
  • 1:$0.5700
SI2333CDS-T1-GE3
DISTI # C1S803600844292		Vishay IntertechnologiesMOSFETs
RoHS: Compliant		822
  • 500:$0.2610
  • 250:$0.2800
  • 100:$0.3160
  • 50:$0.3630
  • 10:$0.4670
  • 1:$2.4500
SI2333CDS-T1-GE3
DISTI # SI2333CDS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 12V 5.1A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2333CDS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1349
  • 6000:$0.1309
  • 12000:$0.1259
  • 18000:$0.1219
  • 30000:$0.1189
SI2333CDS-T1-GE3
DISTI # SI2333CDS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 12V 5.1A 3-Pin SOT-23 T/R (Alt: SI2333CDS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.3779
  • 6000:€0.2579
  • 12000:€0.2219
  • 18000:€0.2049
  • 30000:€0.1899
SI2333CDS-T1-GE3
DISTI # SI2333CDS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 12V 5.1A 3-Pin SOT-23 T/R (Alt: SI2333CDS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI2333CDS-T1-GE3
    DISTI # 29X0526    		Vishay IntertechnologiesMOSFET, P CHANNEL, -12V, -7.1A, SOT-23-3, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-7.1A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.0285ohm,Rds(on) Test Voltage Vgs:-4.5V,No. of Pins:3Pins , RoHS Compliant: Yes0
    • 1:$0.2760
    • 3000:$0.2670
    • 6000:$0.2570
    SI2333CDS-T1-GE3
    DISTI # 16P3712    		Vishay IntertechnologiesP CHANNEL MOSFET, -12V, 5.1A,Transistor Polarity:P Channel,Continuous Drain Current Id:-5.1A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):59mohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:-1V,No. of Pins:3,MSL:-, RoHS Compliant: Yes0
    • 1:$0.7600
    • 10:$0.6070
    • 25:$0.5580
    • 50:$0.5090
    • 100:$0.4600
    • 500:$0.3800
    • 1000:$0.3040
    SI2333CDS-T1-GE3.
    DISTI # 16AC0253    		Vishay IntertechnologiesTransistor Polarity:P Channel,Continuous Drain Current Id:-7.1A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.0285ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,Power Dissipation Pd:2.5W,No. of Pins:3Pins, RoHS Compliant: No0
    • 1:$0.2760
    • 3000:$0.2670
    • 6000:$0.2570
    SI2333CDS-T1-GE3
    DISTI # R1082509    		Vishay DaleTRANSITOR,SI2315BDS
    RoHS: Compliant    		0
    • 10:$0.5700
    • 50:$0.4700
    • 100:$0.4300
    • 250:$0.3900
    • 500:$0.3700
    SI2333CDS-T1-GE3
    DISTI # 781-SI2333CDS-T1-GE3    		Vishay IntertechnologiesMOSFET 12V 5.1A 2.5W 35 mohms @ 4.5V
    RoHS: Compliant    		0
    • 1:$0.7600
    • 10:$0.6070
    • 100:$0.4600
    • 500:$0.3800
    • 1000:$0.3040
    • 3000:$0.2760
    • 6000:$0.2570
    SI2333CDS-T1-GE3Vishay Intertechnologies 12
    • 7:$0.7168
    • 1:$0.8960
    SI2333CDST1GE3Vishay Intertechnologies 
    RoHS: Compliant    		Europe - 3000
      SI2315BDS-T1-E3Vishay IntertechnologiesMOSFET 1.8V 3.2A 1.25W
      RoHS: Compliant      		Americas -
        SI2333CDS-T1-GE3Vishay IntertechnologiesMOSFET 12V 5.1A 2.5W 35 mohms @ 4.5V
        RoHS: Compliant        		Americas -
          SI2333CDS-T1-GE3
          DISTI # 1779259          		Vishay IntertechnologiesMOSFET, P-CH, 12V, 7.1A, SOT23
          RoHS: Compliant          		0
          • 5:£0.3000
          • 25:£0.2950
          • 100:£0.2650
          • 250:£0.2630
          • 500:£0.2410
          SI2333CDS-T1-GE3
          DISTI # 1779259          		Vishay IntertechnologiesMOSFET, P-CH, 12V, 7.1A, SOT23
          RoHS: Compliant          		40
          • 1:$0.9030
          • 10:$0.7660
          • 100:$0.5740
          • 500:$0.4210
          • 1000:$0.3470
          SI2333CDS-T1-GE3
          DISTI # 1779259RL          		Vishay IntertechnologiesMOSFET, P-CH, 12V, 7.1A, SOT23
          RoHS: Compliant          		0
          • 1:$0.9030
          • 10:$0.7660
          • 100:$0.5740
          • 500:$0.4210
          • 1000:$0.3470
          Imagen Parte # Descripción
          SI2333CDS-T1-E3

          Mfr.#: SI2333CDS-T1-E3

          OMO.#: OMO-SI2333CDS-T1-E3

          		 MOSFET 12V 5.1A 2.5W 35mohm @ 4.5V
          SI2333CDS-T1-GE3

          Mfr.#: SI2333CDS-T1-GE3

          OMO.#: OMO-SI2333CDS-T1-GE3

          		 MOSFET 12V 5.1A 2.5W 35 mohms @ 4.5V
          SI2333CDS

          Mfr.#: SI2333CDS

          OMO.#: OMO-SI2333CDS-1190

          		 Nuevo y original
          SI2333CDS-T1-E3

          Mfr.#: SI2333CDS-T1-E3

          OMO.#: OMO-SI2333CDS-T1-E3-VISHAY

          		 MOSFET P-CH 12V 7.1A SOT23-3
          SI2333CDS-T1-GE3

          Mfr.#: SI2333CDS-T1-GE3

          OMO.#: OMO-SI2333CDS-T1-GE3-VISHAY

          		 MOSFET P-CH 12V 7.1A SOT-23
          SI2333CDS-T1-GE3/O3XXX

          Mfr.#: SI2333CDS-T1-GE3/O3XXX

          OMO.#: OMO-SI2333CDS-T1-GE3-O3XXX-1190

          		 Nuevo y original
          SI2333CDS-TI-E3

          Mfr.#: SI2333CDS-TI-E3

          OMO.#: OMO-SI2333CDS-TI-E3-1190

          		 Nuevo y original
          SI2333CDS-TI-GE3

          Mfr.#: SI2333CDS-TI-GE3

          OMO.#: OMO-SI2333CDS-TI-GE3-1190

          		 Nuevo y original
          SI2333CDS-T1-E3-CUT TAPE

          Mfr.#: SI2333CDS-T1-E3-CUT TAPE

          OMO.#: OMO-SI2333CDS-T1-E3-CUT-TAPE-1190

          		 Nuevo y original
          SI2333CDS-T1-GE3-CUT TAPE

          Mfr.#: SI2333CDS-T1-GE3-CUT TAPE

          OMO.#: OMO-SI2333CDS-T1-GE3-CUT-TAPE-1190

          		 Nuevo y original
          Disponibilidad
          Valores:
          Available
          En orden:
          3000
          Ingrese la cantidad:
          El precio actual de SI2333CDS-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
          Precio de referencia (USD)
          Cantidad
          Precio unitario
          Ext. Precio
          1
          0,17 US$
          0,17 US$
          10
          0,16 US$
          1,62 US$
          100
          0,15 US$
          15,39 US$
          500
          0,15 US$
          72,65 US$
          1000
          0,14 US$
          136,80 US$
          Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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