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SI2334DS-T1-GE3

SI2334DS-T1-GE3
Mfr. #:
SI2334DS-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 30V 4.9A SOT-23
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI2334DS-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
SI233, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R
***i-Key
MOSFET N-CH 30V 4.9A SOT-23
***
N-CHANNEL 30-V (D-S)
***ark
; Transistor Polarity:N Channel; Continuous Drain Current Id:4.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.035ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +150°C ;RoHS Compliant: Yes
***nell
MOSFET,N CH,30V,4.9A,DIODE,SOT23; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On State Resistance:0.035ohm; Rds(on) Test Voltage Vgs:4.5V; Voltage Vgs Max:8V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; Current Id Max:4.2A; Power Dissipation:1.3W
***ment14 APAC
MOSFET,N CH,30V,4.9A,DIODE,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.035ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.2A; Power Dissipation Pd:1.3W; Voltage Vgs Max:8V
Parte # Mfg. Descripción Valores Precio
SI2334DS-T1-GE3
DISTI # SI2334DS-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 4.9A SOT-23
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		240In Stock
  • 100:$0.4088
  • 10:$0.5480
  • 1:$0.6400
SI2334DS-T1-GE3
DISTI # SI2334DS-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 4.9A SOT-23
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		240In Stock
  • 100:$0.4088
  • 10:$0.5480
  • 1:$0.6400
SI2334DS-T1-GE3
DISTI # SI2334DS-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 4.9A SOT-23
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SI2334DS-T1-GE3
    DISTI # 86R3871    		Vishay IntertechnologiesMOSFET Transistor, N Channel, 4.9 A, 30 V, 0.035 ohm, 4.5 V, 400 mV0
      SI2334DS-T1-GE3
      DISTI # 23T8499      		Vishay IntertechnologiesMOSFET,N CH,30V,4.9A,DIODE,SOT23,Transistor Polarity:N Channel,Continuous Drain Current Id:4.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.035ohm,Rds(on) Test Voltage Vgs:4.5V,Power Dissipation Pd:1.3W,Operating RoHS Compliant: Yes0
        SI2334DS-T1-GE3
        DISTI # 78-SI2334DS-T1-GE3        		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2336DS-T1-GE3
        RoHS: Compliant        		9866
        • 1:$0.6400
        • 10:$0.4880
        • 100:$0.3620
        • 500:$0.2980
        • 1000:$0.2300
        • 3000:$0.2250
        SI2334DS-T1-GE3
        DISTI # 1858943        		Vishay IntertechnologiesMOSFET,N CH,30V,4.9A,DIODE,SOT23
        RoHS: Compliant        		5279
        • 500:£0.1640
        • 250:£0.1650
        • 100:£0.1660
        • 25:£0.1970
        • 5:£0.2110
        Imagen Parte # Descripción
        SI2334DS-T1-GE3

        Mfr.#: SI2334DS-T1-GE3

        OMO.#: OMO-SI2334DS-T1-GE3

        		 MOSFET RECOMMENDED ALT 781-SI2336DS-T1-GE3
        SI2334DS-T1-GE3

        Mfr.#: SI2334DS-T1-GE3

        OMO.#: OMO-SI2334DS-T1-GE3-VISHAY

        		 MOSFET N-CH 30V 4.9A SOT-23
        Disponibilidad
        Valores:
        Available
        En orden:
        2500
        Ingrese la cantidad:
        El precio actual de SI2334DS-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        0,34 US$
        0,34 US$
        10
        0,32 US$
        3,21 US$
        100
        0,30 US$
        30,38 US$
        500
        0,29 US$
        143,45 US$
        1000
        0,27 US$
        270,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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