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SI2333CDS-T1-E3

SI2333CDS-T1-E3
Mfr. #:
SI2333CDS-T1-E3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 12V 5.1A 2.5W 35mohm @ 4.5V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI2333CDS-T1-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2333CDS-T1-E3 DatasheetSI2333CDS-T1-E3 Datasheet (P4-P6)SI2333CDS-T1-E3 Datasheet (P7-P9)
ECAD Model:
Más información:
SI2333CDS-T1-E3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-23-3
Número de canales:
1 Channel
Polaridad del transistor:
P-Channel
Vds - Voltaje de ruptura de drenaje-fuente:
12 V
Id - Corriente de drenaje continua:
7.1 A
Rds On - Resistencia de la fuente de drenaje:
35 mOhms
Vgs th - Voltaje umbral puerta-fuente:
400 mV
Vgs - Voltaje puerta-fuente:
4.5 V
Qg - Carga de puerta:
15 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
2.5 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Altura:
1.45 mm
Longitud:
2.9 mm
Serie:
SI2
Tipo de transistor:
1 P-Channel
Ancho:
1.6 mm
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
18.5 S
Otoño:
12 ns
Tipo de producto:
MOSFET
Hora de levantarse:
35 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
45 ns
Tiempo típico de retardo de encendido:
13 ns
Parte # Alias:
SI2333CDS-E3
Unidad de peso:
0.000282 oz
Tags
SI2333CDS-T1, SI2333CDS-T, SI2333C, SI2333, SI233, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, P CH, -12V, -7.1A, TO-236-3; Transistor Polarity:P Channel; Continuous D
***ure Electronics
Single P-Channel 12 V 35 mO 25 nC Surface Mount Power Mosfet - SOT-23
***et
Trans MOSFET P-CH 12V 5.1A 3-Pin SOT-23 T/R
***enic
12V 7.1A 35m´Î@4.5V5.1A 2.5W 1V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
***icontronic
Small Signal Field-Effect Transistor, 7.1A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***nell
MOSFET, P CH, -12V, -7.1A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.1A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.0285ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:-
***(Formerly Allied Electronics)
MOSFET, Power,P-Ch,VDSS -12V,RDS(ON) 0.025Ohm,ID -4.1A,TO-236 (SOT-23),PD 0.75W
***ure Electronics
Single P-Channel 12 V 0.032 Ohms Surface Mount Power Mosfet - SOT-23
***enic
12V 4.1A 750mW 32m´Î@4.5V5.3A 1V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
***roFlash
Small Signal Field-Effect Transistor, 4.1A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***ment14 APAC
MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.3A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):32mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:1.25W; Transistor Case Style:SOT-23; No. of Pins:3; Current Id Max:-4.1A; Package / Case:SOT-23; Termination Type:SMD; Voltage Vds Typ:-12V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-4.5V
***(Formerly Allied Electronics)
SI2365EDS-T1-GE3 P-channel MOSFET Transistor; 4.7 A; 20 V; 3-Pin TO-236
***ment14 APAC
MOSFET, P-CH, -20V, -5.9A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.9A; Source Voltage Vds:-20V; On Resistance
***nsix Microsemi
Small Signal Field-Effect Transistor, 5.9A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***nell
MOSFET, P-CH, -20V, -5.9A, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: -5.9A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.0265ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 1.7W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
***enic
12V 5A 2W 50m´Î@10V3.5A 1V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
*** Stop Electro
Power Field-Effect Transistor, 5A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***el Electronic
Transistors - FETs, MOSFETs - Single 1 (Unlimited) TO-236-3, SC-59, SOT-23-3 Surface Mount MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 50mOhm @ 3.5A, 10V 5A Tc -55°C~150°C TJ Trans MOSFET P-CH 12V 5A Automotive 3-Pin SOT-23 T/R
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Parte # Mfg. Descripción Valores Precio
SI2333CDS-T1-E3
DISTI # 33959248		Vishay IntertechnologiesTrans MOSFET P-CH 12V 5.1A 3-Pin SOT-23 T/R
RoHS: Compliant		18000
  • 3000:$0.2437
SI2333CDS-T1-E3
DISTI # SI2333CDS-T1-E3CT-ND		Vishay SiliconixMOSFET P-CH 12V 7.1A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		102705In Stock
  • 1000:$0.1962
  • 500:$0.2539
  • 100:$0.3231
  • 10:$0.4330
  • 1:$0.5100
SI2333CDS-T1-E3
DISTI # SI2333CDS-T1-E3DKR-ND		Vishay SiliconixMOSFET P-CH 12V 7.1A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		102705In Stock
  • 1000:$0.1962
  • 500:$0.2539
  • 100:$0.3231
  • 10:$0.4330
  • 1:$0.5100
SI2333CDS-T1-E3
DISTI # SI2333CDS-T1-E3TR-ND		Vishay SiliconixMOSFET P-CH 12V 7.1A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		99000In Stock
  • 30000:$0.1434
  • 15000:$0.1512
  • 6000:$0.1625
  • 3000:$0.1736
SI2333CDS-T1-E3
DISTI # V36:1790_09216807		Vishay IntertechnologiesTrans MOSFET P-CH 12V 5.1A 3-Pin SOT-23 T/R
RoHS: Compliant		0
  • 3000:$0.3109
SI2333CDS-T1-E3
DISTI # V72:2272_09216807		Vishay IntertechnologiesTrans MOSFET P-CH 12V 5.1A 3-Pin SOT-23 T/R
RoHS: Compliant		0
    SI2333CDS-T1-E3
    DISTI # SI2333CDS-T1-E3    		Vishay IntertechnologiesTrans MOSFET P-CH 12V 5.1A 3-Pin SOT-23 T/R (Alt: SI2333CDS-T1-E3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Asia - 0
      SI2333CDS-T1-E3
      DISTI # SI2333CDS-T1-E3      		Vishay IntertechnologiesTrans MOSFET P-CH 12V 5.1A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2333CDS-T1-E3)
      RoHS: Not Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 30000:$0.2436
      • 18000:$0.2503
      • 12000:$0.2575
      • 6000:$0.2684
      • 3000:$0.2766
      SI2333CDS-T1-E3
      DISTI # SI2333CDS-T1-E3      		Vishay IntertechnologiesTrans MOSFET P-CH 12V 5.1A 3-Pin SOT-23 T/R (Alt: SI2333CDS-T1-E3)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel      		Europe - 0
      • 30000:€0.2229
      • 18000:€0.2399
      • 12000:€0.2599
      • 6000:€0.3019
      • 3000:€0.4419
      SI2333CDS-T1-E3
      DISTI # 88T7691      		Vishay IntertechnologiesTrans MOSFET P-CH 12V 5.1A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 88T7691)
      RoHS: Not Compliant
      Min Qty: 1
      Container: Ammo Pack      		Americas - 0
      • 1000:$0.3040
      • 500:$0.3800
      • 250:$0.4200
      • 100:$0.4600
      • 50:$0.5340
      • 25:$0.6070
      • 1:$0.7600
      SI2333CDS-T1-E3
      DISTI # 88T7691      		Vishay IntertechnologiesMOSFET, P CHANNEL, -12V, -7.1A, TO-236-3,Transistor Polarity:P Channel,Continuous Drain Current Id:-7.1A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.0285ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-400mV RoHS Compliant: Yes3455
      • 500:$0.4800
      • 250:$0.5300
      • 100:$0.5810
      • 50:$0.6740
      • 25:$0.7660
      • 1:$0.9480
      SI2333CDS-T1-E3
      DISTI # 33P5183      		Vishay IntertechnologiesMOSFET, P CHANNEL, -12V, -7.1A, TO-236-3, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-7.1A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.0285ohm,Rds(on) Test Voltage Vgs:-4.5V,No. of Pins:3Pins RoHS Compliant: Yes0
      • 50000:$0.2460
      • 30000:$0.2570
      • 20000:$0.2760
      • 10000:$0.2950
      • 5000:$0.3200
      • 1:$0.3270
      SI2333CDS-T1-E3
      DISTI # 70026413      		Vishay SiliconixTRANS MOSFET P-CH 12V 5.1A 3-PIN SOT-23T/R
      RoHS: Compliant      		0
      • 3000:$0.3140
      SI2333CDS-T1-E3
      DISTI # 781-SI2333CDS-E3      		Vishay IntertechnologiesMOSFET 12V 5.1A 2.5W 35mohm @ 4.5V
      RoHS: Compliant      		22583
      • 1:$0.7500
      • 10:$0.6060
      • 100:$0.4590
      • 500:$0.3800
      • 1000:$0.3040
      • 3000:$0.2750
      • 6000:$0.2560
      • 9000:$0.2470
      • 24000:$0.2370
      SI2333CDS-T1-E3Vishay IntertechnologiesSingle P-Channel 12 V 35 mO 25 nC Surface Mount Power Mosfet - SOT-23
      RoHS: Compliant      		24000Reel
      • 3000:$0.1730
      SI2333CDS-T1-E3Vishay Siliconix5100 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-2365
      • 1:$0.3600
      SI2333CDS-T1-E3Vishay Semiconductors5100 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236876
      • 124:$0.2700
      • 15:$0.4050
      • 1:$0.9000
      SI2333CDS-T1-E3Vishay Intertechnologies 463
        SI2333CDS-T1-E3Vishay IntertechnologiesMOSFET 12V 5.1A 2.5W 35mohm @ 4.5V
        RoHS: Compliant        		Americas -
          SI2333CDS-T1-E3
          DISTI # 2459915          		Vishay IntertechnologiesMOSFET, P CHANNEL, -12V, -7.1A, TO-236-3
          RoHS: Compliant          		3455
          • 500:$0.3830
          • 100:$0.4870
          • 10:$0.6530
          • 1:$0.7700
          SI2333CDS-T1-E3
          DISTI # 2335289          		Vishay IntertechnologiesMOSFET, P CH, -12V, -7.1A, SOT-23
          RoHS: Compliant          		3455
          • 100:$0.4870
          • 10:$0.6530
          • 1:$0.7700
          SI2333CDS-T1-E3
          DISTI # 2335289          		Vishay IntertechnologiesMOSFET, P CH, -12V, -7.1A, SOT-23
          RoHS: Compliant          		3455
          • 500:£0.2320
          • 250:£0.2390
          • 100:£0.2450
          • 25:£0.3480
          • 5:£0.3700
          SI2333CDS-T1-E3
          DISTI # XSFP00000063442          		Vishay Siliconix 
          RoHS: Compliant          		18000 in Stock0 on Order
          • 18000:$0.2307
          • 3000:$0.2471
          Imagen Parte # Descripción
          RUC002N05HZGT116

          Mfr.#: RUC002N05HZGT116

          OMO.#: OMO-RUC002N05HZGT116

          		 MOSFET Nch 50V Vds 0.2A 2.4Rds(on) SOT-23
          RC0402FR-07100KL

          Mfr.#: RC0402FR-07100KL

          OMO.#: OMO-RC0402FR-07100KL

          		 Thick Film Resistors - SMD 100K OHM 1%
          RC0402FR-07100RL

          Mfr.#: RC0402FR-07100RL

          OMO.#: OMO-RC0402FR-07100RL

          		 Thick Film Resistors - SMD 100 OHM 1%
          RC0402FR-0720KL

          Mfr.#: RC0402FR-0720KL

          OMO.#: OMO-RC0402FR-0720KL

          		 Thick Film Resistors - SMD 20K OHM 1%
          RC0402FR-0710KL

          Mfr.#: RC0402FR-0710KL

          OMO.#: OMO-RC0402FR-0710KL

          		 Thick Film Resistors - SMD 10K OHM 1%
          LXES15AAA1-133

          Mfr.#: LXES15AAA1-133

          OMO.#: OMO-LXES15AAA1-133

          		 ESD Suppressors / TVS Diodes 15 VDC
          22-03-5025

          Mfr.#: 22-03-5025

          OMO.#: OMO-22-03-5025-410

          		 Headers & Wire Housings 2.5 VERT HDR SPOX 2P shrouded
          RUC002N05HZGT116

          Mfr.#: RUC002N05HZGT116

          OMO.#: OMO-RUC002N05HZGT116-ROHM-SEMI

          		 1.2V DRIVE NCH MOSFET
          ABS07-32.768KHZ-T

          Mfr.#: ABS07-32.768KHZ-T

          OMO.#: OMO-ABS07-32-768KHZ-T-ABRACON

          		 Crystals 32.768KHz 12.5pf 3.2 x 1.5 x 0.9mm
          GRM033R60J105ME11D

          Mfr.#: GRM033R60J105ME11D

          OMO.#: OMO-GRM033R60J105ME11D-MURATA-ELECTRONICS

          		 Cap Ceramic 1uF 6.3V X5R 20% Pad SMD 0201 85C T/R
          Disponibilidad
          Valores:
          22
          En orden:
          2005
          Ingrese la cantidad:
          El precio actual de SI2333CDS-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
          Precio de referencia (USD)
          Cantidad
          Precio unitario
          Ext. Precio
          1
          0,75 US$
          0,75 US$
          10
          0,61 US$
          6,06 US$
          100
          0,46 US$
          45,90 US$
          500
          0,38 US$
          190,00 US$
          1000
          0,30 US$
          304,00 US$
          Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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