SI2338DS-T1-GE3

Mfr. #:: SI2338DS-T1-GE3
Fabricante:: Vishay / Siliconix
Descripción:: MOSFET 30V Vds 20V Vgs SOT-23
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SI2338DS-T1-GE3 Ficha de datos
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HTML Datasheet:: SI2338DS-T1-GE3 Datasheet SI2338DS-T1-GE3 Datasheet (P4-P6)SI2338DS-T1-GE3 Datasheet (P7-P9)SI2338DS-T1-GE3 Datasheet (P10)
ECAD Model:
Más información:: SI2338DS-T1-GE3 más información

Atributo del producto
Valor de atributo

Fabricante:: Vishay

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: SMD / SMT

Paquete / Caja:: SOT-23-3

Número de canales:: 1 Channel

Polaridad del transistor:: Canal N

Vds - Voltaje de ruptura de drenaje-fuente:: 30 V

Id - Corriente de drenaje continua:: 6 A

Rds On - Resistencia de la fuente de drenaje:: 28 mOhms

Vgs th - Voltaje umbral puerta-fuente:: 1.2 V

Vgs - Voltaje puerta-fuente:: 10 V

Qg - Carga de puerta:: 8.2 nC

Temperatura mínima de funcionamiento:: - 55 C

Temperatura máxima de funcionamiento:: + 150 C

Pd - Disipación de energía:: 2.5 W

Configuración:: Único

Modo de canal:: Mejora

Nombre comercial:: TrenchFET

Embalaje:: Carrete

Serie:: SI2

Tipo de transistor:: 1 N-Channel

Marca:: Vishay / Siliconix

Transconductancia directa - Mín .:: 24 S

Otoño:: 7 ns

Tipo de producto:: MOSFET

Hora de levantarse:: 11 ns

Cantidad de paquete de fábrica:: 3000

Subcategoría:: MOSFET

Tiempo de retardo de apagado típico:: 20 ns

Tiempo típico de retardo de encendido:: 3 ns

Parte # Alias:: SI2338DS-GE3

Unidad de peso:: 0.000282 oz

Tags: SI2338, SI233, SI23, SI2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2338DS-T1-GE3 Descripción

***ied Electronics & Automation: Si2338DS-T1-GE3 N-channel MOSFET Transistor; 6 A; 30 V; 3-Pin SOT-23

***Components: In a Pack of 20, N-Channel MOSFET, 6 A, 30 V, 3-Pin SOT-23 Vishay Si2338DS-T1-GE3

***ure Electronics: N-Channel 30 V 28 mOhm 13 nC Surface Mount Power Mosfet - SOT-23-3

***ical: Trans MOSFET N-CH 30V 6A 3-Pin SOT-23 T/R

***et: N-CH MOSFET SOT-23 30V 28MOHM @ 10V

***i-Key: MOSFET N-CH 30V 6A SOT23

***ronik: N-CH 30V 6A 28mOhm SOT23

***: 30V N CHANNEL

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.023Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:2.5W; No. Of Pins:3Pins Rohs Compliant: No

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 30V, 6A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:2.5W; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2016)

***nell: MOSFET, CA-N, 30V, 6A, SOT-23; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.023ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.5V; Dissipazione di Potenza Pd:2.5W; Modello Case Transistor:SOT-23; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (20-Jun-2016)

SI2338DS-T1-GE3 Más información

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SI2338DS-T1-GE3 DISTI # V72:2272_09216814	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.5A 3-Pin SOT-23 T/R RoHS: Compliant	65	25:$0.4348 10:$0.4513 1:$0.5834
SI2338DS-T1-GE3 DISTI # V36:1790_09216814	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.5A 3-Pin SOT-23 T/R RoHS: Compliant	0	3000000:$0.1568 1500000:$0.1570 300000:$0.1677 30000:$0.1845 3000:$0.1872
SI2338DS-T1-GE3 DISTI # SI2338DS-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 6A SOT23 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1072In Stock	1000:$0.2114 500:$0.2736 100:$0.3482 10:$0.4660 1:$0.5400
SI2338DS-T1-GE3 DISTI # SI2338DS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 6A SOT23 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1072In Stock	1000:$0.2114 500:$0.2736 100:$0.3482 10:$0.4660 1:$0.5400
SI2338DS-T1-GE3 DISTI # SI2338DS-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 6A SOT23 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	30000:$0.1546 15000:$0.1630 6000:$0.1751 3000:$0.1872
SI2338DS-T1-GE3 DISTI # 27050969	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.5A 3-Pin SOT-23 T/R RoHS: Compliant	65	44:$0.5834
SI2338DS-T1-GE3 DISTI # SI2338DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 6A 3-Pin SOT-23 T/R - Cut TR (SOS) (Alt: SI2338DS-T1-GE3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 54	1500:$0.1716 750:$0.1769 375:$0.1825 188:$0.1885 94:$0.1949 47:$0.2018 1:$0.2091
SI2338DS-T1-GE3 DISTI # SI2338DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 6A 3-Pin SOT-23 T/R (Alt: SI2338DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1469 18000:€0.1579 12000:€0.1709 6000:€0.1989 3000:€0.2919
SI2338DS-T1-GE3 DISTI # SI2338DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 6A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2338DS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.1469 18000:$0.1509 12000:$0.1549 6000:$0.1619 3000:$0.1669
SI2338DS-T1-GE3 DISTI # SI2338DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 6A 3-Pin SOT-23 T/R (Alt: SI2338DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI2338DS-T1-GE3 DISTI # 01AC4979	Vishay Intertechnologies	MOSFET, N-CH, 30V, 6A, SOT-23,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power Dissipation RoHS Compliant: Yes	11320	1000:$0.2170 500:$0.2700 250:$0.2960 100:$0.3210 50:$0.3540 25:$0.3860 10:$0.4190 1:$0.5430
SI2338DS-T1-GE3. DISTI # 30AC0143	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power Dissipation Pd:2.5W,No. of Pins:3Pins RoHS Compliant: No	0	1:$0.1980 3000:$0.1980
SI2338DS-T1-GE3 DISTI # 70459511	Vishay Siliconix	Si2338DS-T1-GE3 N-channel MOSFET Transistor,6 A,30 V,3-Pin SOT-23 RoHS: Compliant	0	3000:$0.3930 6000:$0.3760
SI2338DS-T1-GE3 DISTI # 78-SI2338DS-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs SOT-23 RoHS: Compliant	18234	1:$0.5400 10:$0.4150 100:$0.3080 500:$0.2530 1000:$0.1950 3000:$0.1780 6000:$0.1660 9000:$0.1550 24000:$0.1470
SI2338DS-T1-GE3 DISTI # 8123126	Vishay Intertechnologies	TRANS MOSFET N-CH 30V 5.5A 3-PIN, PK	760	3000:£0.1500 1500:£0.1530 600:£0.1900 300:£0.2330 20:£0.3230
SI2338DS-T1-GE3 DISTI # 8123126P	Vishay Intertechnologies	TRANS MOSFET N-CH 30V 5.5A 3-PIN, RL	7120	3000:£0.1500 1500:£0.1530 600:£0.1900 300:£0.2330
SI2338DS-T1-GE3 DISTI # 2679676	Vishay Intertechnologies	MOSFET, N-CH, 30V, 6A, SOT-23 RoHS: Compliant	39000	3000:$0.2870
SI2338DS-T1-GE3 DISTI # 2646366	Vishay Intertechnologies	MOSFET, N-CH, 30V, 6A, SOT-23 RoHS: Compliant	16921	1000:$0.3190 500:$0.4130 100:$0.5250 10:$0.7020 1:$0.8100
SI2338DS-T1-GE3 DISTI # 2679676	Vishay Intertechnologies	MOSFET, N-CH, 30V, 6A, SOT-23	45000	9000:£0.1540 3000:£0.1750
SI2338DS-T1-GE3 DISTI # TMOS2497	Vishay Intertechnologies	N-CH 30V 6A 28mOhm SOT23 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	3000:$0.2600 6000:$0.2451 9000:$0.2302 12000:$0.2080 15000:$0.2005
SI2338DS-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs SOT-23 RoHS: Compliant	Americas - 6000

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Disponibilidad

Valores:: 23
En orden:: 2006
Ingrese la cantidad:

El precio actual de SI2338DS-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,54 US$~~; ~~0,54 US$~~

10: ~~0,42 US$~~; ~~4,15 US$~~

100: ~~0,31 US$~~; ~~30,80 US$~~

500: ~~0,25 US$~~; ~~126,50 US$~~

1000: ~~0,20 US$~~; ~~195,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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SI2338DS-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes