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| PartNumber | HGTD1N120BNS9A | HGTD7N60C3S9A | HGTD3N60C3S9A |
| Description | IGBT Transistors 5.3a 1200v N-Ch IGBT NPT Series | IGBT Transistors 14a 600V N-Ch IGBT UFS Series | IGBT 600V 6A 33W TO252AA |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | IGBT Transistors | IGBT Transistors | - |
| RoHS | E | E | - |
| Technology | Si | Si | - |
| Package / Case | TO-252AA-3 | TO-252AA-3 | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 1200 V | 600 V | - |
| Collector Emitter Saturation Voltage | 2.5 V | 1.6 V | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Continuous Collector Current at 25 C | 5.3 A | 14 A | - |
| Pd Power Dissipation | 60 W | 60 W | - |
| Minimum Operating Temperature | - 55 C | - 40 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | HGTD1N120BNS | HGTD7N60C3S | - |
| Packaging | Reel | Reel | - |
| Continuous Collector Current Ic Max | 5.3 A | 14 A | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.6 mm | 6.6 mm | - |
| Width | 6.1 mm | 6.1 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Continuous Collector Current | 5.3 A | 14 A | - |
| Gate Emitter Leakage Current | +/- 250 nA | +/- 250 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | IGBTs | IGBTs | - |
| Unit Weight | 0.009184 oz | 0.009184 oz | - |
| Part # Aliases | - | HGTD7N60C3S9A_NL | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
HGTD1N120BNS9A | IGBT Transistors 5.3a 1200v N-Ch IGBT NPT Series | |
| HGTD7N60C3S9A | IGBT Transistors 14a 600V N-Ch IGBT UFS Series | ||
ON Semiconductor |
HGTD7N60C3S9A | IGBT Transistors 14a 600V N-Ch IGBT UFS Series | |
| HGTD1N120BNS9A | IGBT 1200V 5.3A 60W TO252AA | ||
| HGTD3N60C3S9A | IGBT 600V 6A 33W TO252AA | ||
| HGTD10N40F1 | Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-251AA | ||
| HGTD10N40F1S | Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-252AA | ||
| HGTD10N50F1 | Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-251AA | ||
| HGTD10N50F1S | Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-252AA | ||
| HGTD14N05B | Nuevo y original | ||
| HGTD1N120B | Nuevo y original | ||
| HGTD1N120BNS | IGBT Transistors NPTPIGBT TO252 5.3A 1200V | ||
| HGTD1N120BNS 1N120B | Nuevo y original | ||
| HGTD2N120BNS | Nuevo y original | ||
| HGTD2N120CNS | Nuevo y original | ||
| HGTD3N60A4S | 600V, SMPS Series N-Channel IGBT - Bulk (Alt: HGTD3N60A4S) | ||
| HGTD3N60B3S | Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA | ||
| HGTD3N60C3 | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-251AA | ||
| HGTD3N60C3D | Nuevo y original | ||
| HGTD3N60C3S | - Bulk (Alt: HGTD3N60C3S) | ||
| HGTD6N40E1 | Nuevo y original | ||
| HGTD6N40E1S | - Bulk (Alt: HGTD6N40E1S) | ||
| HGTD6N50E1 | - Bulk (Alt: HGTD6N50E1) | ||
| HGTD6N50E1S | Nuevo y original | ||
| HGTD6N50E1S9A | Nuevo y original | ||
| HGTD7N60A4S | IGBT Transistors TO-252 | ||
| HGTD7N60B3 | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-251AA | ||
| HGTD7N60B3S | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA | ||
| HGTD7N60C3 | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-251AA | ||
| HGTD7N60C3S | - Bulk (Alt: HGTD7N60C3S) | ||
| HGTD7N60C3S9A-NL | Nuevo y original | ||
| HGTD8P50G1 | Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, P-Channel, TO-251AA | ||
| HGTD8P50G1S | Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, P-Channel, TO-252AA | ||
| HGTD8P50G1S9A | Nuevo y original |