HGTD10N50F1

HGTD10N50F1
Mfr. #:
HGTD10N50F1
Fabricante:
Rochester Electronics, LLC
Descripción:
Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-251AA
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HGTD10N50F1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
HGTD10, HGTD1, HGTD, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***pNet
10A 400V AND 500V N-CH IGBTS
Parte # Mfg. Descripción Valores Precio
HGTD10N50F1Harris SemiconductorInsulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-251AA
RoHS: Not Compliant
2649
  • 1000:$1.6600
  • 500:$1.7500
  • 100:$1.8200
  • 25:$1.9000
  • 1:$2.0400
HGTD10N50F1SHarris SemiconductorInsulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-252AA
RoHS: Not Compliant
495
  • 1000:$0.8300
  • 500:$0.8700
  • 100:$0.9100
  • 25:$0.9500
  • 1:$1.0200
Imagen Parte # Descripción
HGTD1N120BNS9A

Mfr.#: HGTD1N120BNS9A

OMO.#: OMO-HGTD1N120BNS9A

IGBT Transistors 5.3a 1200v N-Ch IGBT NPT Series
HGTD1N120BNS9A

Mfr.#: HGTD1N120BNS9A

OMO.#: OMO-HGTD1N120BNS9A-ON-SEMICONDUCTOR

IGBT 1200V 5.3A 60W TO252AA
HGTD10N40F1

Mfr.#: HGTD10N40F1

OMO.#: OMO-HGTD10N40F1-1190

Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-251AA
HGTD10N40F1S

Mfr.#: HGTD10N40F1S

OMO.#: OMO-HGTD10N40F1S-1190

Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-252AA
HGTD10N50F1

Mfr.#: HGTD10N50F1

OMO.#: OMO-HGTD10N50F1-1190

Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-251AA
HGTD10N50F1S

Mfr.#: HGTD10N50F1S

OMO.#: OMO-HGTD10N50F1S-1190

Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-252AA
HGTD14N05B

Mfr.#: HGTD14N05B

OMO.#: OMO-HGTD14N05B-1190

Nuevo y original
HGTD1N120B

Mfr.#: HGTD1N120B

OMO.#: OMO-HGTD1N120B-1190

Nuevo y original
HGTD1N120BNS

Mfr.#: HGTD1N120BNS

OMO.#: OMO-HGTD1N120BNS-1190

IGBT Transistors NPTPIGBT TO252 5.3A 1200V
HGTD1N120BNS 1N120B

Mfr.#: HGTD1N120BNS 1N120B

OMO.#: OMO-HGTD1N120BNS-1N120B-1190

Nuevo y original
Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de HGTD10N50F1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,00 US$
0,00 US$
10
0,00 US$
0,00 US$
100
0,00 US$
0,00 US$
500
0,00 US$
0,00 US$
1000
0,00 US$
0,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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