HGTD3N60A4S

HGTD3N60A4S
Mfr. #:
HGTD3N60A4S
Fabricante:
Rochester Electronics, LLC
Descripción:
600V, SMPS Series N-Channel IGBT - Bulk (Alt: HGTD3N60A4S)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HGTD3N60A4S Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
HGTD3, HGTD, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***pNet
Trans IGBT Chip N-CH 600V 17A 3-Pin(2+Tab) DPAK
Parte # Mfg. Descripción Valores Precio
HGTD3N60A4S
DISTI # HGTD3N60A4S
ON Semiconductor600V, SMPS Series N-Channel IGBT - Bulk (Alt: HGTD3N60A4S)
RoHS: Not Compliant
Min Qty: 736
Container: Bulk
Americas - 0
  • 7360:$0.4189
  • 3680:$0.4299
  • 2208:$0.4349
  • 1472:$0.4409
  • 736:$0.4439
HGTD3N60A4S
DISTI # 512-HGTD3N60A4S
ON SemiconductorMotor / Motion / Ignition Controllers & Drivers
RoHS: Not compliant
0
    HGTD3N60A4SFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-252AA
    RoHS: Compliant
    2691
    • 1000:$0.4500
    • 500:$0.4700
    • 100:$0.4900
    • 25:$0.5100
    • 1:$0.5500
    Imagen Parte # Descripción
    HGTD3N60A4S

    Mfr.#: HGTD3N60A4S

    OMO.#: OMO-HGTD3N60A4S-1190

    600V, SMPS Series N-Channel IGBT - Bulk (Alt: HGTD3N60A4S)
    HGTD3N60B3S

    Mfr.#: HGTD3N60B3S

    OMO.#: OMO-HGTD3N60B3S-1190

    Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA
    HGTD3N60C3

    Mfr.#: HGTD3N60C3

    OMO.#: OMO-HGTD3N60C3-1190

    Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-251AA
    HGTD3N60C3D

    Mfr.#: HGTD3N60C3D

    OMO.#: OMO-HGTD3N60C3D-1190

    Nuevo y original
    HGTD3N60C3S

    Mfr.#: HGTD3N60C3S

    OMO.#: OMO-HGTD3N60C3S-1190

    - Bulk (Alt: HGTD3N60C3S)
    HGTD3N60C3S9A

    Mfr.#: HGTD3N60C3S9A

    OMO.#: OMO-HGTD3N60C3S9A-ON-SEMICONDUCTOR

    IGBT 600V 6A 33W TO252AA
    Disponibilidad
    Valores:
    Available
    En orden:
    1000
    Ingrese la cantidad:
    El precio actual de HGTD3N60A4S es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,00 US$
    0,00 US$
    10
    0,00 US$
    0,00 US$
    100
    0,00 US$
    0,00 US$
    500
    0,00 US$
    0,00 US$
    1000
    0,00 US$
    0,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
    Empezar con
    Nuevos productos
    Top