HGTD7N60B3

HGTD7N60B3
Mfr. #:
HGTD7N60B3
Fabricante:
Rochester Electronics, LLC
Descripción:
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-251AA
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HGTD7N60B3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
HGTD7, HGTD, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
HGTD7N60B3Harris SemiconductorInsulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-251AA
RoHS: Not Compliant
900
  • 1000:$0.6700
  • 500:$0.7100
  • 100:$0.7400
  • 25:$0.7700
  • 1:$0.8300
HGTD7N60B3SHarris SemiconductorInsulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA
RoHS: Not Compliant
703
  • 1000:$0.6800
  • 500:$0.7200
  • 100:$0.7500
  • 25:$0.7800
  • 1:$0.8400
HGTD7N60B3HARTING Technology Group 
RoHS: Not Compliant
Europe - 600
    Imagen Parte # Descripción
    HGTD7N60C3S9A

    Mfr.#: HGTD7N60C3S9A

    OMO.#: OMO-HGTD7N60C3S9A

    IGBT Transistors 14a 600V N-Ch IGBT UFS Series
    HGTD7N60C3S9A

    Mfr.#: HGTD7N60C3S9A

    OMO.#: OMO-HGTD7N60C3S9A-ON-SEMICONDUCTOR

    IGBT Transistors 14a 600V N-Ch IGBT UFS Series
    HGTD7N60A4S

    Mfr.#: HGTD7N60A4S

    OMO.#: OMO-HGTD7N60A4S-1190

    IGBT Transistors TO-252
    HGTD7N60B3

    Mfr.#: HGTD7N60B3

    OMO.#: OMO-HGTD7N60B3-1190

    Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-251AA
    HGTD7N60B3S

    Mfr.#: HGTD7N60B3S

    OMO.#: OMO-HGTD7N60B3S-1190

    Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA
    HGTD7N60C3

    Mfr.#: HGTD7N60C3

    OMO.#: OMO-HGTD7N60C3-1190

    Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-251AA
    HGTD7N60C3S

    Mfr.#: HGTD7N60C3S

    OMO.#: OMO-HGTD7N60C3S-1190

    - Bulk (Alt: HGTD7N60C3S)
    HGTD7N60C3S9A-NL

    Mfr.#: HGTD7N60C3S9A-NL

    OMO.#: OMO-HGTD7N60C3S9A-NL-1190

    Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    4000
    Ingrese la cantidad:
    El precio actual de HGTD7N60B3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,00 US$
    1,00 US$
    10
    0,95 US$
    9,55 US$
    100
    0,90 US$
    90,45 US$
    500
    0,85 US$
    427,15 US$
    1000
    0,80 US$
    804,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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