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HGTD1N120BNS9A

HGTD1N120BNS9A
Mfr. #:
HGTD1N120BNS9A
Fabricante:
ON Semiconductor / Fairchild
Descripción:
IGBT Transistors 5.3a 1200v N-Ch IGBT NPT Series
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HGTD1N120BNS9A Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
E
Tecnología:
Si
Paquete / Caja:
TO-252AA-3
Estilo de montaje:
SMD / SMT
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje de saturación colector-emisor:
2.5 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
5.3 A
Pd - Disipación de energía:
60 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
HGTD1N120BNS
Embalaje:
Carrete
Corriente continua de colector Ic Max:
5.3 A
Altura:
2.3 mm
Longitud:
6.6 mm
Ancho:
6.1 mm
Marca:
ON Semiconductor / Fairchild
Corriente continua del colector:
5.3 A
Corriente de fuga puerta-emisor:
+/- 250 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
2500
Subcategoría:
IGBT
Unidad de peso:
0.009184 oz
Tags
HGTD1N120BN, HGTD1N, HGTD1, HGTD, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 1200V 5.3A 60000mW 3-Pin(2+Tab) DPAK T/R
***ure Electronics
HGTD1N120BNS9A Series N-Channel 1200 V 5.3 A Surface Mount IGBT - TO-252AA
***ark
Transistor; Transistor Type:IGBT; DC Collector Current:5.3A; Collector Emitter Voltage, Vces:1200V; Power Dissipation, Pd:60W; Collector Emitter Voltage, V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; No. of Pins:3 ;RoHS Compliant: Yes
***rchild Semiconductor
HGTD1N120BNS9A is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
Parte # Mfg. Descripción Valores Precio
HGTD1N120BNS9A
DISTI # V72:2272_06301347		ON SemiconductorNPTPIGBT TO252 5.3A 1200V2512
  • 1000:$0.6572
  • 500:$0.8194
  • 250:$0.8848
  • 100:$0.9194
  • 25:$1.1703
  • 10:$1.1721
  • 1:$1.3556
HGTD1N120BNS9A
DISTI # HGTD1N120BNS9ACT-ND		ON SemiconductorIGBT 1200V 5.3A 60W TO252AA
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6782In Stock
  • 1000:$0.7524
  • 500:$0.9468
  • 100:$1.1412
  • 10:$1.4570
  • 1:$1.6200
HGTD1N120BNS9A
DISTI # HGTD1N120BNS9ADKR-ND		ON SemiconductorIGBT 1200V 5.3A 60W TO252AA
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6782In Stock
  • 1000:$0.7524
  • 500:$0.9468
  • 100:$1.1412
  • 10:$1.4570
  • 1:$1.6200
HGTD1N120BNS9A
DISTI # HGTD1N120BNS9ATR-ND		ON SemiconductorIGBT 1200V 5.3A 60W TO252AA
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		5000In Stock
  • 5000:$0.6518
  • 2500:$0.6832
HGTD1N120BNS9A
DISTI # 27193709		ON SemiconductorNPTPIGBT TO252 5.3A 1200V2512
  • 1000:$0.6572
  • 500:$0.8194
  • 250:$0.8848
  • 100:$0.9194
  • 25:$1.1704
  • 13:$1.1721
HGTD1N120BNS9A
DISTI # HGTD1N120BNS9A		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 5.3A 3-Pin(2+Tab) DPAK T/R (Alt: HGTD1N120BNS9A)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 2500
  • 2500:$0.5980
  • 5000:$0.5750
  • 7500:$0.5537
  • 12500:$0.5339
  • 25000:$0.5155
  • 62500:$0.4983
  • 125000:$0.4902
HGTD1N120BNS9A
DISTI # HGTD1N120BNS9A		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 5.3A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: HGTD1N120BNS9A)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.5359
  • 5000:$0.5329
  • 10000:$0.5259
  • 15000:$0.5189
  • 25000:$0.5059
HGTD1N120BNS9A
DISTI # 31Y1823		ON SemiconductorIGBT Single Transistor, 5.3 A, 2.5 V, 60 W, 1.2 kV, TO-252AA, 3 , RoHS Compliant: Yes21277
  • 1:$1.5600
  • 10:$1.3300
  • 25:$1.2300
  • 50:$1.1300
  • 100:$1.0300
  • 250:$0.9770
  • 500:$0.9200
  • 1000:$0.7360
HGTD1N120BNS9A
DISTI # 82C5178		ON SemiconductorSINGLE IGBT, 1.2KV, 5.3A, FULL REEL,DC Collector Current:5.3A,Collector Emitter Saturation Voltage Vce(on):2.5V,Power Dissipation Pd:60W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C, RoHS Compliant: Yes0
  • 1:$0.6340
  • 2500:$0.6300
  • 10000:$0.6070
  • 25000:$0.5890
HGTD1N120BNS9A
DISTI # 512-HGTD1N120BNS9A		ON SemiconductorIGBT Transistors 5.3a 1200v N-Ch IGBT NPT Series
RoHS: Compliant		2393
  • 1:$1.4800
  • 10:$1.2600
  • 100:$0.9670
  • 500:$0.8550
  • 1000:$0.6750
  • 2500:$0.5980
  • 10000:$0.5760
HGTD1N120BNS9AFairchild Semiconductor Corporation 1804
    HGTD1N120BNS9AFairchild Semiconductor Corporation 
    RoHS: Not Compliant    		Europe - 46917
      HGTD1N120BNS9A
      DISTI # 2453921      		ON SemiconductorIGBT, SINGLE, 1.2KV, 5.3A, TO-252AA-3
      RoHS: Compliant      		21347
      • 5:£1.1900
      • 25:£1.0800
      • 100:£0.8300
      • 250:£0.7820
      • 500:£0.7330
      HGTD1N120BNS9A
      DISTI # C1S226600689984      		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 5.3A 3-Pin(2+Tab) DPAK T/R
      RoHS: Compliant      		2512
      • 250:$0.8848
      • 100:$0.9194
      • 10:$1.1721
      HGTD1N120BNS9A
      DISTI # C1S541901472166      		ON SemiconductorIGBT Chip
      RoHS: Compliant      		30000
      • 2500:$0.3470
      HGTD1N120BNS9A
      DISTI # 2453921RL      		ON SemiconductorIGBT, SINGLE, 1.2KV, 5.3A, TO-252AA-3
      RoHS: Compliant      		0
      • 1:$2.3500
      • 10:$2.0000
      • 100:$1.5400
      • 500:$1.3600
      • 1000:$1.0800
      • 2500:$0.9470
      • 10000:$0.9120
      HGTD1N120BNS9A
      DISTI # 2453921      		ON SemiconductorIGBT, SINGLE, 1.2KV, 5.3A, TO-252AA-3
      RoHS: Compliant      		21277
      • 1:$2.3500
      • 10:$2.0000
      • 100:$1.5400
      • 500:$1.3600
      • 1000:$1.0800
      • 2500:$0.9470
      • 10000:$0.9120
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      Disponibilidad
      Valores:
      Available
      En orden:
      1992
      Ingrese la cantidad:
      El precio actual de HGTD1N120BNS9A es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,48 US$
      1,48 US$
      10
      1,26 US$
      12,60 US$
      100
      0,97 US$
      96,70 US$
      500
      0,86 US$
      427,50 US$
      1000
      0,68 US$
      675,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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