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Parte # | Mfg. | Descripción | Valores | Precio |
---|---|---|---|---|
HGTD3N60B3S | Harris Semiconductor | Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA RoHS: Not Compliant | 944 |
|
HGTD3N60B3S9A | Harris Semiconductor | Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA RoHS: Not Compliant | 2500 |
|
HGTD3N60B3S | HARTING Technology Group | RoHS: Not Compliant | 1800 |
Imagen | Parte # | Descripción |
---|---|---|
Mfr.#: HGTD3N60A4S OMO.#: OMO-HGTD3N60A4S-1190 |
600V, SMPS Series N-Channel IGBT - Bulk (Alt: HGTD3N60A4S) | |
Mfr.#: HGTD3N60B3S OMO.#: OMO-HGTD3N60B3S-1190 |
Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA | |
Mfr.#: HGTD3N60C3 OMO.#: OMO-HGTD3N60C3-1190 |
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-251AA | |
Mfr.#: HGTD3N60C3D OMO.#: OMO-HGTD3N60C3D-1190 |
Nuevo y original | |
Mfr.#: HGTD3N60C3S OMO.#: OMO-HGTD3N60C3S-1190 |
- Bulk (Alt: HGTD3N60C3S) | |
Mfr.#: HGTD3N60C3S9A |
IGBT 600V 6A 33W TO252AA |