 |  | | |
| PartNumber | IPB025N08N3 G | IPB025N10N3 G | IPB025N08N3GATMA1 |
| Description | MOSFET N-Ch 80V 120A D2PAK-2 OptiMOS 3 | MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3 | MOSFET MV POWER MOS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-7 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 80 V | 100 V | - |
| Id Continuous Drain Current | 120 A | 180 A | - |
| Rds On Drain Source Resistance | 2.5 mOhms | 2 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 300 W | 300 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 33 ns | 28 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 73 ns | 58 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 86 ns | 84 ns | - |
| Typical Turn On Delay Time | 28 ns | 34 ns | - |
| Part # Aliases | IPB025N08N3GATMA1 IPB25N8N3GXT SP000311980 | IPB025N10N3GATMA1 IPB25N1N3GXT SP000469888 | G IPB025N08N3 IPB25N8N3GXT SP000311980 |
| Unit Weight | 0.139332 oz | 0.056438 oz | 0.139332 oz |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Qg Gate Charge | - | 206 nC | - |
| Type | - | OptiMOS 3 Power-Transistor | - |
| Forward Transconductance Min | - | 100 S | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB027N10N3 G | MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 | |
| IPB027N10N3GATMA1 | MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 | ||
| IPB025N08N3 G | MOSFET N-Ch 80V 120A D2PAK-2 OptiMOS 3 | ||
| IPB026N06NATMA1 | MOSFET N-Ch 60V 100A D2PAK-2 | ||
| IPB026N06N | MOSFET N-Ch 60V 100A D2PAK-2 | ||
| IPB029N06N3GATMA1 | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 | ||
| IPB025N10N3 G | MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3 | ||
| IPB027N10N5ATMA1 | MOSFET N-Ch 100V 120A D2PAK-2 | ||
| IPB025N10N3GATMA1 | MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3 | ||
| IPB027N10N3GATMA1 | MOSFET N-CH 100V 120A TO263-3 | ||
| IPB029N06N3GATMA1 | MOSFET N-CH 60V 120A TO263-3 | ||
| IPB025N08N3GATMA1 | MOSFET N-CH 80V 120A TO263-3 | ||
| IPB025N10N3GATMA1 | MOSFET N-CH 100V 180A TO263-7 | ||
| IPB025N10N3GE8187ATMA1 | MOSFET N-CH 100V 180A TO263-7 | ||
| IPB026N06NATMA1 | Darlington Transistors MOSFET N-Ch 60V 100A D2PAK-2 | ||
| IPB027N10N5ATMA1 | RF Bipolar Transistors MOSFET N-Ch 100V 120A D2PAK-2 | ||
| IPB029N06N3GE8187ATMA1 | MOSFET N-CH 60V 120A TO263-3 | ||
Infineon Technologies |
IPB025N08N3GATMA1 | MOSFET MV POWER MOS | |
| IPB029N06N3GE8187ATMA1 | MOSFET N-Ch 60V 120A D2PAK-2 | ||
| IPB027N10N3G | MOSFET N-CH 120A 100V OPTIMOS3 TO263, RL | ||
| IPB027N10N5ATMA1-CUT TAPE | Nuevo y original | ||
| IPB026N06N | MOSFET N-Ch 60V 100A D2PAK-2 | ||
| IPB025N08N3 | Nuevo y original | ||
| IPB025N08N3 G | Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB025N08N3 G) | ||
| IPB025N08N3G | Nuevo y original | ||
| IPB025N10N3 G | MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3 | ||
| IPB025N10N3G | Trans MOSFET N-CH 100V 180A 7-Pin TO-263 T/R (Alt: IPB025N10N3 G) | ||
| IPB025N10N3G , 2SD1824 | Nuevo y original | ||
| IPB025N10N3GE8197ATMA1 | - Bulk (Alt: IPB025N10N3GE8197ATMA1) | ||
| IPB027N10N 027N10N | Nuevo y original | ||
| IPB027N10N3GE8187ATMA1 | Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R (Alt: SP001044582) | ||
| IPB027N10N3GS | Nuevo y original | ||
| IPB027N10N5 | N-CH 100V 120A 2,7mOhm TO263-3 | ||
| IPB029N06N | Nuevo y original | ||
| IPB029N06N3 G | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 | ||
| IPB029N06N3G | Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R (Alt: SP000453052) | ||
| IPB027N10N3 G | IGBT Transistors MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 | ||
| IPB025N10N3GE818XT | RF Bipolar Transistors MOSFET N-Ch 100V 180A D2PAK-6 |