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IPB026N06NATMA1

IPB026N06NATMA1
Mfr. #:
IPB026N06NATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 60V 100A D2PAK-2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB026N06NATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPB026N06NATMA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
100 A
Rds On - Resistencia de la fuente de drenaje:
2.3 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.1 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
66 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
136 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
OptiMOS
Embalaje:
Carrete
Altura:
4.4 mm
Longitud:
10 mm
Producto:
OptiMOS Power
Serie:
OptiMOS 5
Tipo de transistor:
1 N-Channel
Escribe:
Transistor de potencia OptiMOS
Ancho:
9.25 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
80 S
Otoño:
8 ns
Tipo de producto:
MOSFET
Hora de levantarse:
15 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
30 ns
Tiempo típico de retardo de encendido:
17 ns
Parte # Alias:
IPB026N06N IPB26N6NXT SP000962142
Unidad de peso:
0.139332 oz
Tags
IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK Infineon IPB026N06NATMA1
***et Europe
Trans MOSFET N-CH 60V 100A 3-Pin TO-263 T/R
***ark
MOSFET, N-CH, 60V, 100A, TO-263-3
***ical
Trans MOSFET N-CH 60V 100A
***i-Key
MOSFET N-CH 60V 25A TO263-3
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 100A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:136W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CANALE N 60V 100A TO-263-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0023ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:136W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 3 - 168 ore; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
Parte # Mfg. Descripción Valores Precio
IPB026N06NATMA1
DISTI # V72:2272_06382953		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		360
  • 250:$1.4926
  • 100:$1.4962
  • 25:$1.7836
  • 10:$1.7896
  • 1:$2.0280
IPB026N06NATMA1
DISTI # IPB026N06NATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 25A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		957In Stock
  • 500:$1.6853
  • 100:$2.1669
  • 10:$2.6970
  • 1:$2.9900
IPB026N06NATMA1
DISTI # IPB026N06NATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 25A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		957In Stock
  • 500:$1.6853
  • 100:$2.1669
  • 10:$2.6970
  • 1:$2.9900
IPB026N06NATMA1
DISTI # IPB026N06NATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 25A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$1.3558
IPB026N06NATMA1
DISTI # 31066474		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		450
  • 12:$1.3607
IPB026N06NATMA1
DISTI # 27065521		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		360
  • 250:$1.4926
  • 100:$1.4962
  • 25:$1.7836
  • 10:$1.7896
  • 7:$2.0280
IPB026N06NATMA1
DISTI # IPB026N06NATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB026N06NATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$0.9789
  • 2000:$0.9439
  • 4000:$0.9099
  • 6000:$0.8789
  • 10000:$0.8639
IPB026N06NATMA1
DISTI # SP000962142		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin TO-263 T/R (Alt: SP000962142)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€1.2459
  • 2000:€0.9679
  • 4000:€0.8989
  • 6000:€0.8709
  • 10000:€0.8369
IPB026N06NATMA1
DISTI # 50Y2002		Infineon Technologies AGMOSFET Transistor, N Channel, 100 A, 60 V, 0.0023 ohm, 10 V, 2.8 V RoHS Compliant: Yes657
  • 1:$2.5100
  • 10:$2.1300
  • 25:$1.9900
  • 50:$1.8400
  • 100:$1.7000
  • 250:$1.6000
  • 500:$1.4900
IPB026N06NATMA1
DISTI # 726-IPB026N06NATMA1		Infineon Technologies AGMOSFET N-Ch 60V 100A D2PAK-2
RoHS: Compliant		864
  • 1:$2.5100
  • 10:$2.1300
  • 100:$1.7000
  • 500:$1.4900
  • 1000:$1.2400
IPB026N06N
DISTI # 726-IPB026N06N		Infineon Technologies AGMOSFET N-Ch 60V 100A D2PAK-2
RoHS: Compliant		482
  • 1:$2.5100
  • 10:$2.1300
  • 100:$1.7000
  • 500:$1.4900
  • 1000:$1.2400
IPB026N06NATMA1
DISTI # 9062883P		Infineon Technologies AGMOSFET N-CHANNEL 60V 100A OPTIMOS TO263, RL975
  • 15:£1.5480
  • 50:£1.3860
  • 100:£1.2240
  • 250:£1.2000
IPB026N06NATMA1
DISTI # IPB026N06NATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,100A,136W,PG-TO263-328
  • 1:$1.9215
  • 5:$1.6504
  • 25:$1.3299
  • 100:$1.1594
  • 1000:$1.0741
IPB026N06NATMA1
DISTI # C1S322000654323		Infineon Technologies AGMOSFETs
RoHS: Compliant		360
  • 250:$1.4926
  • 100:$1.4962
  • 25:$1.7836
  • 10:$1.7896
IPB026N06NATMA1
DISTI # 2480797		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TO-263-3
RoHS: Compliant		657
  • 1:£1.9600
  • 10:£1.4000
  • 100:£1.2300
  • 250:£1.2100
  • 500:£1.0400
IPB026N06NATMA1
DISTI # 2480797		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TO-263-3
RoHS: Compliant		657
  • 1:$3.9700
  • 10:$3.3800
  • 100:$2.6900
  • 500:$2.3700
  • 1000:$1.9700
IPB026N06NATMA1
DISTI # 2480797RL		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TO-263-3
RoHS: Compliant		0
  • 1:$3.9700
  • 10:$3.3800
  • 100:$2.6900
  • 500:$2.3700
  • 1000:$1.9700
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Disponibilidad
Valores:
Available
En orden:
1985
Ingrese la cantidad:
El precio actual de IPB026N06NATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,50 US$
2,50 US$
10
2,12 US$
21,20 US$
100
1,70 US$
170,00 US$
500
1,48 US$
740,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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