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IPB027N10N5ATMA1

IPB027N10N5ATMA1
Mfr. #:
IPB027N10N5ATMA1
Fabricante:
Infineon Technologies
Descripción:
RF Bipolar Transistors MOSFET N-Ch 100V 120A D2PAK-2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB027N10N5ATMA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
IPB027N10N5ATMA1 más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Alias ​​de parte
IPB027N10N5 SP001227034
Unidad de peso
0.139332 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-263-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
250 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
17 ns
Hora de levantarse
15 ns
Vgs-Puerta-Fuente-Voltaje
+/- 20 V
Id-corriente-de-drenaje-continua
120 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
2.2 V
Resistencia a la fuente de desagüe de Rds
3.5 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
52 ns
Tiempo de retardo de encendido típico
26 ns
Qg-Gate-Charge
112 nC
Transconductancia directa-Mín.
102 S
Modo de canal
Mejora
Tags
IPB027N10N5, IPB027, IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 166A Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
Single N-Channel 100 V 2.7 mOhm 142 nC OptiMOS™5 Power Mosfet - D2PAK-3
***ark
Mosfet, N-Ch, 100V, 166A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:166A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0024Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
OptiMOS 5 100V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 100V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 43% from previous generation | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Light Electric Vehicles (LEV)
Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.
Parte # Mfg. Descripción Valores Precio
IPB027N10N5ATMA1
DISTI # IPB027N10N5ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 120A D2PAK-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		414In Stock
  • 500:$3.1749
  • 100:$3.9209
  • 10:$4.7820
  • 1:$5.3600
IPB027N10N5ATMA1
DISTI # IPB027N10N5ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 120A D2PAK-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		414In Stock
  • 500:$3.1749
  • 100:$3.9209
  • 10:$4.7820
  • 1:$5.3600
IPB027N10N5ATMA1
DISTI # IPB027N10N5ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 120A D2PAK-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 1000:$2.5997
IPB027N10N5ATMA1
DISTI # IPB027N10N5		Infineon Technologies AGTrans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R (Alt: IPB027N10N5)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Asia - 1000
  • 1000:$2.8135
  • 2000:$2.7227
  • 3000:$2.6377
  • 5000:$2.5577
  • 10000:$2.5196
  • 25000:$2.4825
  • 50000:$2.4465
IPB027N10N5ATMA1
DISTI # IPB027N10N5ATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB027N10N5ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$2.3900
  • 2000:$2.2900
  • 4000:$2.1900
  • 6000:$2.0900
  • 10000:$2.0900
IPB027N10N5ATMA1
DISTI # SP001227034		Infineon Technologies AGTrans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R (Alt: SP001227034)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€2.1900
  • 2000:€2.1900
  • 4000:€2.0900
  • 6000:€1.8900
  • 10000:€1.7900
IPB027N10N5ATMA1
DISTI # 34AC1652		Infineon Technologies AGMOSFET, N-CH, 100V, 166A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:166A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0024ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes92
  • 500:$2.8100
  • 250:$3.1300
  • 100:$3.3000
  • 50:$3.4700
  • 25:$3.6300
  • 10:$3.8000
  • 1:$4.4700
IPB027N10N5ATMA1Infineon Technologies AGSingle N-Channel 100 V 2.7 mOhm 142 nC OptiMOS5 Power Mosfet - D2PAK-3
RoHS: Not Compliant		30Cut Tape/Mini-Reel
  • 1:$3.2500
  • 50:$2.7900
  • 100:$2.7100
  • 250:$2.6200
  • 500:$2.4800
IPB027N10N5ATMA1
DISTI # 726-IPB027N10N5ATMA1		Infineon Technologies AGMOSFET N-Ch 100V 120A D2PAK-2
RoHS: Compliant		290
  • 1:$4.4600
  • 10:$3.7900
  • 100:$3.2900
  • 250:$3.1200
  • 500:$2.8000
  • 1000:$2.3600
  • 2000:$2.2400
IPB027N10N5ATMA1
DISTI # 2781065		Infineon Technologies AGMOSFET, N-CH, 100V, 166A, TO-263
RoHS: Compliant		298
  • 500:£2.1800
  • 250:£2.4400
  • 100:£2.5700
  • 10:£2.9600
  • 1:£3.8900
IPB027N10N5ATMA1
DISTI # 2781065		Infineon Technologies AGMOSFET, N-CH, 100V, 166A, TO-263
RoHS: Compliant		92
  • 1000:$3.5300
  • 500:$3.7100
  • 250:$3.9100
  • 100:$4.1400
  • 10:$4.6800
  • 1:$5.0000
Imagen Parte # Descripción
IPB027N10N3 G

Mfr.#: IPB027N10N3 G

OMO.#: OMO-IPB027N10N3-G

 MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
IPB027N10N3GATMA1

Mfr.#: IPB027N10N3GATMA1

OMO.#: OMO-IPB027N10N3GATMA1

 MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
IPB027N10N5ATMA1

Mfr.#: IPB027N10N5ATMA1

OMO.#: OMO-IPB027N10N5ATMA1

 MOSFET N-Ch 100V 120A D2PAK-2
IPB027N10N3G

Mfr.#: IPB027N10N3G

OMO.#: OMO-IPB027N10N3G-1190

 MOSFET N-CH 120A 100V OPTIMOS3 TO263, RL
IPB027N10N3GATMA1

Mfr.#: IPB027N10N3GATMA1

OMO.#: OMO-IPB027N10N3GATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 100V 120A TO263-3
IPB027N10N5ATMA1-CUT TAPE

Mfr.#: IPB027N10N5ATMA1-CUT TAPE

OMO.#: OMO-IPB027N10N5ATMA1-CUT-TAPE-1190

 Nuevo y original
IPB027N10N3GE8187ATMA1

Mfr.#: IPB027N10N3GE8187ATMA1

OMO.#: OMO-IPB027N10N3GE8187ATMA1-1190

 Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R (Alt: SP001044582)
IPB027N10N3GS

Mfr.#: IPB027N10N3GS

OMO.#: OMO-IPB027N10N3GS-1190

 Nuevo y original
IPB027N10N3 G

Mfr.#: IPB027N10N3 G

OMO.#: OMO-IPB027N10N3-G-126

 IGBT Transistors MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
IPB027N10N5ATMA1

Mfr.#: IPB027N10N5ATMA1

OMO.#: OMO-IPB027N10N5ATMA1-INFINEON-TECHNOLOGIES

 RF Bipolar Transistors MOSFET N-Ch 100V 120A D2PAK-2
Disponibilidad
Valores:
Available
En orden:
4000
Ingrese la cantidad:
El precio actual de IPB027N10N5ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,95 US$
2,95 US$
10
2,80 US$
28,02 US$
100
2,65 US$
265,41 US$
500
2,51 US$
1 253,35 US$
1000
2,36 US$
2 359,20 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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