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IPB027N10N3GATMA1

IPB027N10N3GATMA1
Mfr. #:
IPB027N10N3GATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 100V 120A TO263-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB027N10N3GATMA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
XPB027N10
embalaje
Carrete
Alias ​​de parte
G IPB027N10N3 IPB027N10N3GXT SP000506508
Unidad de peso
0.068654 oz
Estilo de montaje
SMD / SMT
Nombre comercial
OptiMOS
Paquete-Estuche
TO-263-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
300 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
28 ns
Hora de levantarse
58 ns
Vgs-Puerta-Fuente-Voltaje
+/- 20 V
Id-corriente-de-drenaje-continua
120 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
2.7 V
Resistencia a la fuente de desagüe de Rds
2.7 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
84 ns
Tiempo de retardo de encendido típico
34 ns
Qg-Gate-Charge
155 nC
Transconductancia directa-Mín.
188 S
Modo de canal
Mejora
Tags
IPB027N10N3, IPB027, IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 4.5 mOhm 206 nC OptiMOS™ Power Mosfet - D2PAK
***ow.cn
Trans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-3, RoHS
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:120A; On Resistance Rds(On):0.0023Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V Rohs Compliant: Yes
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Parte # Mfg. Descripción Valores Precio
IPB027N10N3GATMA1
DISTI # IPB027N10N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2767In Stock
  • 500:$3.7670
  • 100:$4.6520
  • 10:$5.6730
  • 1:$6.3500
IPB027N10N3GATMA1
DISTI # IPB027N10N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2767In Stock
  • 500:$3.7670
  • 100:$4.6520
  • 10:$5.6730
  • 1:$6.3500
IPB027N10N3GATMA1
DISTI # IPB027N10N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		2000In Stock
  • 1000:$3.0845
IPB027N10N3GATMA1
DISTI # IPB027N10N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB027N10N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$2.6900
  • 2000:$2.6900
  • 4000:$2.6900
  • 6000:$2.6900
  • 10000:$2.6900
IPB027N10N3GATMA1
DISTI # SP000506508		Infineon Technologies AGTrans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R (Alt: SP000506508)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€2.6900
  • 2000:€2.5900
  • 4000:€2.4900
  • 6000:€2.2900
  • 10000:€2.0900
IPB027N10N3GATMA1
DISTI # 85X6013		Infineon Technologies AGMOSFET, N-CH, 100V, 120A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V RoHS Compliant: Yes156
  • 1:$5.3100
  • 10:$4.5100
  • 25:$4.3100
  • 50:$4.1100
  • 100:$3.9100
  • 250:$3.7100
  • 500:$3.3300
IPB027N10N3GATMA1.
DISTI # 27AC6718		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power Dissipation Pd:300W,No. of Pins:3Pins RoHS Compliant: Yes0
    IPB027N10N3GATMA1Infineon Technologies AGSingle N-Channel 100 V 4.5 mOhm 206 nC OptiMOS Power Mosfet - D2PAK
    RoHS: Not Compliant    		2000Reel
    • 1000:$3.0800
    IPB027N10N3 G
    DISTI # 726-IPB027N10N3G    		Infineon Technologies AGMOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant    		5900
    • 1:$5.3100
    • 10:$4.5100
    • 100:$3.9100
    • 250:$3.7100
    • 500:$3.3300
    • 1000:$2.8100
    IPB027N10N3GATMA1
    DISTI # 726-IPB027N10N3GATMA    		Infineon Technologies AGMOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant    		757
    • 1:$5.3100
    • 10:$4.5100
    • 100:$3.9100
    • 250:$3.7100
    • 500:$3.3300
    • 1000:$2.8100
    IPB027N10N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		10
    • 1000:$2.4200
    • 500:$2.5500
    • 100:$2.6500
    • 25:$2.7700
    • 1:$2.9800
    IPB027N10N3GATMA1
    DISTI # 8259235    		Infineon Technologies AGMOSFET N-CH 120A 100V OPTIMOS3 TO263, PK184
    • 2:£3.9150
    • 10:£2.9900
    • 50:£2.7250
    • 250:£2.4600
    • 500:£2.2150
    IPB027N10N3GATMA1
    DISTI # 8259235P    		Infineon Technologies AGMOSFET N-CH 120A 100V OPTIMOS3 TO263, RL922
    • 10:£2.9900
    • 50:£2.7250
    • 250:£2.4600
    • 500:£2.2150
    IPB027N10N3GATMA1
    DISTI # 2443379    		Infineon Technologies AGMOSFET, N CH, 100V, 120A, TO-263-3
    RoHS: Compliant    		154
    • 1:$8.4000
    • 10:$7.1400
    • 100:$6.1900
    • 250:$5.8700
    • 500:$5.2800
    • 1000:$4.4500
    IPB027N10N3GATMA1
    DISTI # 2443379RL    		Infineon Technologies AGMOSFET, N CH, 100V, 120A, TO-263-3
    RoHS: Compliant    		0
    • 1:$8.4000
    • 10:$7.1400
    • 100:$6.1900
    • 250:$5.8700
    • 500:$5.2800
    • 1000:$4.4500
    IPB027N10N3GATMA1
    DISTI # 2443379    		Infineon Technologies AGMOSFET, N CH, 100V, 120A, TO-263-3
    RoHS: Compliant    		254
    • 1:£3.7700
    • 10:£2.7600
    • 100:£2.4800
    • 250:£2.3000
    • 500:£2.1100
    IPB027N10N3GATMA1
    DISTI # XSFP00000103332    		Infineon Technologies AG 
    RoHS: Compliant    		1346
    • 1000:$4.1100
    • 1346:$3.8500
    Imagen Parte # Descripción
    IPB027N10N3 G

    Mfr.#: IPB027N10N3 G

    OMO.#: OMO-IPB027N10N3-G

    		 MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
    IPB027N10N3GATMA1

    Mfr.#: IPB027N10N3GATMA1

    OMO.#: OMO-IPB027N10N3GATMA1

    		 MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
    IPB027N10N3G

    Mfr.#: IPB027N10N3G

    OMO.#: OMO-IPB027N10N3G-1190

    		 MOSFET N-CH 120A 100V OPTIMOS3 TO263, RL
    IPB027N10N3GATMA1

    Mfr.#: IPB027N10N3GATMA1

    OMO.#: OMO-IPB027N10N3GATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 100V 120A TO263-3
    IPB027N10N5ATMA1-CUT TAPE

    Mfr.#: IPB027N10N5ATMA1-CUT TAPE

    OMO.#: OMO-IPB027N10N5ATMA1-CUT-TAPE-1190

    		 Nuevo y original
    IPB027N10N 027N10N

    Mfr.#: IPB027N10N 027N10N

    OMO.#: OMO-IPB027N10N-027N10N-1190

    		 Nuevo y original
    IPB027N10N3GS

    Mfr.#: IPB027N10N3GS

    OMO.#: OMO-IPB027N10N3GS-1190

    		 Nuevo y original
    IPB027N10N5

    Mfr.#: IPB027N10N5

    OMO.#: OMO-IPB027N10N5-1190

    		 N-CH 100V 120A 2,7mOhm TO263-3
    IPB027N10N3 G

    Mfr.#: IPB027N10N3 G

    OMO.#: OMO-IPB027N10N3-G-126

    		 IGBT Transistors MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
    IPB027N10N5ATMA1

    Mfr.#: IPB027N10N5ATMA1

    OMO.#: OMO-IPB027N10N5ATMA1-INFINEON-TECHNOLOGIES

    		 RF Bipolar Transistors MOSFET N-Ch 100V 120A D2PAK-2
    Disponibilidad
    Valores:
    Available
    En orden:
    4500
    Ingrese la cantidad:
    El precio actual de IPB027N10N3GATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    3,56 US$
    3,56 US$
    10
    3,38 US$
    33,84 US$
    100
    3,21 US$
    320,63 US$
    500
    3,03 US$
    1 514,05 US$
    1000
    2,85 US$
    2 850,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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