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IPB027N10N3 G

IPB027N10N3 G
Mfr. #:
IPB027N10N3 G
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB027N10N3 G Ficha de datos
Entrega:
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Más información:
IPB027N10N3 G más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
OptiMOS 3
embalaje
Carrete
Alias ​​de parte
IPB027N10N3GATMA1 IPB027N10N3GXT SP000506508
Unidad de peso
0.139332 oz
Estilo de montaje
SMD / SMT
Nombre comercial
OptiMOS
Paquete-Estuche
TO-252-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
300 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
28 ns
Hora de levantarse
58 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
120 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Resistencia a la fuente de desagüe de Rds
2.7 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
84 ns
Tiempo de retardo de encendido típico
34 ns
Modo de canal
Mejora
Tags
IPB027N10N3, IPB027, IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Parte # Mfg. Descripción Valores Precio
IPB027N10N3GATMA1
DISTI # V72:2272_06377077		Infineon Technologies AGTrans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		601
  • 500:$2.7250
  • 250:$3.3290
  • 100:$3.6080
  • 25:$3.9880
  • 10:$4.0330
  • 1:$4.7620
IPB027N10N3GATMA1
DISTI # IPB027N10N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2759In Stock
  • 500:$3.7670
  • 100:$4.6520
  • 10:$5.6730
  • 1:$6.3500
IPB027N10N3GATMA1
DISTI # IPB027N10N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2759In Stock
  • 500:$3.7670
  • 100:$4.6520
  • 10:$5.6730
  • 1:$6.3500
IPB027N10N3GATMA1
DISTI # IPB027N10N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		2000In Stock
  • 1000:$3.0845
IPB027N10N3 G
DISTI # 30581325		Infineon Technologies AGTrans MOSFET N-CH 100V 120A 3-Pin(2+Tab) TO-263
RoHS: Compliant		1560
  • 50:$3.4935
  • 10:$4.6792
  • 4:$6.9615
IPB027N10N3GATMA1
DISTI # 31343658		Infineon Technologies AGTrans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		601
  • 3:$4.7620
IPB027N10N3 G
DISTI # IPB027N10N3 G		Infineon Technologies AGTrans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R (Alt: IPB027N10N3 G)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Asia - 1000
  • 1000:$2.8613
  • 2000:$2.7818
  • 3000:$2.7066
  • 5000:$2.6354
  • 10000:$2.6012
  • 25000:$2.5678
  • 50000:$2.5353
IPB027N10N3GATMA1
DISTI # IPB027N10N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB027N10N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$2.6900
  • 2000:$2.6900
  • 4000:$2.6900
  • 6000:$2.6900
  • 10000:$2.6900
IPB027N10N3GATMA1.
DISTI # 27AC6718		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power Dissipation Pd:300W,No. of Pins:3Pins RoHS Compliant: Yes0
  • 1:$2.6900
IPB027N10N3GATMA1
DISTI # 85X6013		Infineon Technologies AGMOSFET, N-CH, 100V, 120A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V RoHS Compliant: Yes2
  • 1:$5.8400
  • 10:$4.9600
  • 25:$4.7400
  • 50:$4.5200
  • 100:$4.3000
  • 250:$4.0800
  • 500:$3.6600
  • 1000:$3.0900
IPB027N10N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		10
  • 1000:$2.4200
  • 500:$2.5500
  • 100:$2.6500
  • 25:$2.7700
  • 1:$2.9800
IPB027N10N3 G
DISTI # 726-IPB027N10N3G		Infineon Technologies AGMOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
RoHS: Compliant		0
  • 1:$5.3100
  • 10:$4.5100
  • 100:$3.9100
  • 250:$3.7100
  • 500:$3.3300
  • 1000:$2.8100
IPB027N10N3GATMA1
DISTI # 726-IPB027N10N3GATMA		Infineon Technologies AGMOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
RoHS: Compliant		50
  • 1:$5.3100
  • 10:$4.5100
  • 100:$3.9100
  • 250:$3.7100
  • 500:$3.3300
  • 1000:$2.8100
IPB027N10N3GATMA1
DISTI # 8259235P		Infineon Technologies AGMOSFET N-CH 120A 100V OPTIMOS3 TO263, RL922
  • 10:£2.9900
  • 50:£2.7250
  • 250:£2.4600
  • 500:£2.2150
IPB027N10N3GATMA1
DISTI # 8259235		Infineon Technologies AGMOSFET N-CH 120A 100V OPTIMOS3 TO263, PK184
  • 2:£3.9150
  • 10:£2.9900
  • 50:£2.7250
  • 250:£2.4600
  • 500:£2.2150
IPB027N10N3GInfineon Technologies AGPOWER FIELD-EFFECT TRANSISTOR, 120A I(D), 100V, 0.0027OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB46
  • 9:$2.4000
  • 3:$3.2000
  • 1:$4.8000
IPB027N10N3GInfineon Technologies AG 144
    IPB027N10N3GInfineon Technologies AG 58
    • 2:$3.5840
    • 8:$2.3296
    • 23:$1.7920
    IPB027N10N3 GInfineon Technologies AG 354
      IPB027N10N3 GInfineon Technologies AGRoHS(ship within 1day)300
      • 1:$5.5000
      • 10:$4.6900
      • 50:$4.0600
      • 100:$3.8800
      • 500:$3.7200
      • 1000:$3.6400
      IPB027N10N3GATMA1
      DISTI # C1S322000524457      		Infineon Technologies AGTrans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
      RoHS: Compliant      		601
      • 1:$3.6400
      IPB027N10N3 G
      DISTI # C1S322000194070      		Infineon Technologies AGTrans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK T/R
      RoHS: Compliant      		1560
      • 50:$2.7400
      • 10:$3.6700
      • 1:$5.4600
      IPB027N10N3GATMA1
      DISTI # 2443379      		Infineon Technologies AGMOSFET, N CH, 100V, 120A, TO-263-3
      RoHS: Compliant      		0
      • 1:$8.4000
      • 10:$7.1400
      • 100:$6.1900
      • 250:$5.8700
      • 500:$5.2800
      • 1000:$4.4500
      IPB027N10N3GATMA1
      DISTI # 2443379RL      		Infineon Technologies AGMOSFET, N CH, 100V, 120A, TO-263-3
      RoHS: Compliant      		0
      • 1:$8.4000
      • 10:$7.1400
      • 100:$6.1900
      • 250:$5.8700
      • 500:$5.2800
      • 1000:$4.4500
      IPB027N10N3GATMA1
      DISTI # 2443379      		Infineon Technologies AGMOSFET, N CH, 100V, 120A, TO-263-3
      RoHS: Compliant      		99
      • 1:£3.9600
      • 10:£2.7600
      • 100:£2.6200
      • 250:£2.4800
      • 500:£2.2400
      Imagen Parte # Descripción
      IPB027N10N5ATMA1

      Mfr.#: IPB027N10N5ATMA1

      OMO.#: OMO-IPB027N10N5ATMA1

      		 MOSFET N-Ch 100V 120A D2PAK-2
      IPB027N10N3G

      Mfr.#: IPB027N10N3G

      OMO.#: OMO-IPB027N10N3G-1190

      		 MOSFET N-CH 120A 100V OPTIMOS3 TO263, RL
      IPB027N10N3GATMA1

      Mfr.#: IPB027N10N3GATMA1

      OMO.#: OMO-IPB027N10N3GATMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 100V 120A TO263-3
      IPB027N10N5ATMA1-CUT TAPE

      Mfr.#: IPB027N10N5ATMA1-CUT TAPE

      OMO.#: OMO-IPB027N10N5ATMA1-CUT-TAPE-1190

      		 Nuevo y original
      IPB027N10N 027N10N

      Mfr.#: IPB027N10N 027N10N

      OMO.#: OMO-IPB027N10N-027N10N-1190

      		 Nuevo y original
      IPB027N10N3GE8187ATMA1

      Mfr.#: IPB027N10N3GE8187ATMA1

      OMO.#: OMO-IPB027N10N3GE8187ATMA1-1190

      		 Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R (Alt: SP001044582)
      IPB027N10N3GS

      Mfr.#: IPB027N10N3GS

      OMO.#: OMO-IPB027N10N3GS-1190

      		 Nuevo y original
      IPB027N10N5

      Mfr.#: IPB027N10N5

      OMO.#: OMO-IPB027N10N5-1190

      		 N-CH 100V 120A 2,7mOhm TO263-3
      IPB027N10N3 G

      Mfr.#: IPB027N10N3 G

      OMO.#: OMO-IPB027N10N3-G-126

      		 IGBT Transistors MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
      IPB027N10N5ATMA1

      Mfr.#: IPB027N10N5ATMA1

      OMO.#: OMO-IPB027N10N5ATMA1-INFINEON-TECHNOLOGIES

      		 RF Bipolar Transistors MOSFET N-Ch 100V 120A D2PAK-2
      Disponibilidad
      Valores:
      Available
      En orden:
      2000
      Ingrese la cantidad:
      El precio actual de IPB027N10N3 G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      3,80 US$
      3,80 US$
      10
      3,61 US$
      36,13 US$
      100
      3,42 US$
      342,27 US$
      500
      3,23 US$
      1 616,25 US$
      1000
      3,04 US$
      3 042,40 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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