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IPB029N06N3GE8187ATMA1

IPB029N06N3GE8187ATMA1
Mfr. #:
IPB029N06N3GE8187ATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 60V 120A D2PAK-2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB029N06N3GE8187ATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
120 A
Rds On - Resistencia de la fuente de drenaje:
2.9 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
53 nC
Pd - Disipación de energía:
188 W
Configuración:
Único
Embalaje:
Carrete
Altura:
4.4 mm
Longitud:
10 mm
Serie:
IPB029N06
Tipo de transistor:
1 N-Channel
Ancho:
9.25 mm
Marca:
Infineon Technologies
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Parte # Alias:
E8187 G IPB029N06N3 IPB29N6N3GE8187XT SP000939334
Unidad de peso:
0.068654 oz
Tags
IPB029N06N3, IPB029, IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Parte # Mfg. Descripción Valores Precio
IPB029N06N3GE8187ATMA1
DISTI # IPB029N06N3GE8187ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$1.0671
IPB029N06N3GE8187ATMA1
DISTI # IPB029N06N3GE8187ATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB029N06N3GE8187ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$0.9629
  • 2000:$0.9289
  • 4000:$0.8949
  • 6000:$0.8649
  • 10000:$0.8499
IPB029N06N3GE8187ATMA1
DISTI # 726-IPB029N06N3GE818		Infineon Technologies AGMOSFET N-Ch 60V 120A D2PAK-2
RoHS: Compliant		0
  • 1:$1.9700
  • 10:$1.6800
  • 100:$1.3400
  • 500:$1.1800
  • 1000:$0.9700
IPB029N06N3GE8187ATMA1
DISTI # 8269200P		Infineon Technologies AGMOSFET N-CH 120A 60V OPTIMOS3 TO263, RL310
  • 50:£1.0490
  • 100:£0.9560
Imagen Parte # Descripción
IPB029N06N3GATMA1

Mfr.#: IPB029N06N3GATMA1

OMO.#: OMO-IPB029N06N3GATMA1

 MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3
IPB029N06N3GE8187ATMA1

Mfr.#: IPB029N06N3GE8187ATMA1

OMO.#: OMO-IPB029N06N3GE8187ATMA1

 MOSFET N-Ch 60V 120A D2PAK-2
IPB029N06N3GATMA1

Mfr.#: IPB029N06N3GATMA1

OMO.#: OMO-IPB029N06N3GATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 120A TO263-3
IPB029N06N3 G

Mfr.#: IPB029N06N3 G

OMO.#: OMO-IPB029N06N3-G-1190

 MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3
IPB029N06N3G

Mfr.#: IPB029N06N3G

OMO.#: OMO-IPB029N06N3G-1190

 Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R (Alt: SP000453052)
IPB029N06N3GE8187ATMA1

Mfr.#: IPB029N06N3GE8187ATMA1

OMO.#: OMO-IPB029N06N3GE8187ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 120A TO263-3
Disponibilidad
Valores:
Available
En orden:
4000
Ingrese la cantidad:
El precio actual de IPB029N06N3GE8187ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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