PartNumber | BSC190N15NS3 G | BSC190N12NS3 G | BSC190N12NS3GATMA1 |
Description | MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3 | MOSFET N-Ch 120V 44A TDSON-8 OptiMOS 3 | MOSFET MV POWER MOS |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TDSON-8 | TDSON-8 | TDSON-8 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 150 V | 120 V | - |
Id Continuous Drain Current | 50 A | 44 A | - |
Rds On Drain Source Resistance | 16 mOhms | 19 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2 V | 3 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 31 nC | 26 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 125 W | 69 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | - | - |
Tradename | OptiMOS | OptiMOS | OptiMOS |
Packaging | Reel | Reel | Reel |
Height | 1.27 mm | 1.27 mm | 1.27 mm |
Length | 5.9 mm | 5.9 mm | 5.9 mm |
Series | OptiMOS 3 | OptiMOS 3 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Type | OptiMOS 3 Power-Transistor | OptiMOS 3 Power-Transistor | - |
Width | 5.15 mm | 5.15 mm | 5.15 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 29 S | 45 S, 23 S | - |
Fall Time | 6 ns | 4 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 53 ns | 16 ns | - |
Factory Pack Quantity | 5000 | 5000 | - |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 25 ns | 22 ns | - |
Typical Turn On Delay Time | 15 ns | 17 ns | - |
Part # Aliases | BSC190N15NS3GATMA1 BSC19N15NS3GXT SP000416636 | BSC190N12NS3GATMA1 BSC19N12NS3GXT SP000652752 | BSC190N12NS3 BSC19N12NS3GXT G SP000652752 |
Unit Weight | 0.003527 oz | - | - |