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BSC196N10NS G

BSC196N10NS G
Mfr. #:
BSC196N10NS G
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 100V 45A TDSON-8 OptiMOS 2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC196N10NS G Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
BSC196N10NS G más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TDSON-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
8.5 A
Rds On - Resistencia de la fuente de drenaje:
19.6 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
78 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
OptiMOS
Embalaje:
Carrete
Altura:
1.27 mm
Longitud:
5.9 mm
Serie:
OptiMOS 2
Tipo de transistor:
1 N-Channel
Ancho:
5.15 mm
Marca:
Infineon Technologies
Otoño:
5 ns
Tipo de producto:
MOSFET
Hora de levantarse:
22 ns
Cantidad de paquete de fábrica:
5000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
18 ns
Tiempo típico de retardo de encendido:
16 ns
Parte # Alias:
BSC196N10NSGATMA1 BSC196N1NSGXT SP000379604
Unidad de peso:
0.006632 oz
Tags
BSC196N10NSG, BSC196, BSC19, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Parte # Mfg. Descripción Valores Precio
BSC196N10NSGATMA1
DISTI # BSC196N10NSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 45A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.4818
BSC196N10NSGATMA1
DISTI # BSC196N10NSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 45A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.5596
  • 500:$0.7089
  • 100:$0.9141
  • 10:$1.1570
  • 1:$1.3100
BSC196N10NSGATMA1
DISTI # BSC196N10NSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 45A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.5596
  • 500:$0.7089
  • 100:$0.9141
  • 10:$1.1570
  • 1:$1.3100
BSC196N10NSGATMA1
DISTI # BSC196N10NSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 8.5A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC196N10NSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.3789
  • 10000:$0.3649
  • 20000:$0.3519
  • 30000:$0.3399
  • 50000:$0.3339
BSC196N10NSGATMA1
DISTI # 60R2519		Infineon Technologies AGMOSFET, N CHANNEL, 100V, 45A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:45A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0167ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes5000
  • 1:$1.0900
  • 10:$0.9220
  • 100:$0.7090
  • 500:$0.6260
  • 1000:$0.4940
BSC196N10NS G
DISTI # 726-BSC196N10NSG		Infineon Technologies AGMOSFET N-Ch 100V 45A TDSON-8 OptiMOS 2
RoHS: Compliant		168
  • 1:$1.0900
  • 10:$0.9220
  • 100:$0.7090
  • 500:$0.6260
  • 1000:$0.4940
BSC196N10NSGATMA1
DISTI # 1775474		Infineon Technologies AGMOSFET, N CH, 100V, 45A, PG-TDSON-8
RoHS: Compliant		5000
  • 5:£0.9010
  • 25:£0.7450
  • 100:£0.6780
BSC196N10NSGATMA1
DISTI # 1775474		Infineon Technologies AGMOSFET, N CH, 100V, 45A, PG-TDSON-8
RoHS: Compliant		5000
  • 1:$1.7300
  • 10:$1.4600
  • 100:$1.1300
  • 500:$0.9910
  • 1000:$0.7820
  • 5000:$0.7730
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Mfr.#: RC0402JR-13330RL

OMO.#: OMO-RC0402JR-13330RL-433

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Mfr.#: DHN-04-V

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Disponibilidad
Valores:
Available
En orden:
5000
Ingrese la cantidad:
El precio actual de BSC196N10NS G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,08 US$
1,08 US$
10
0,92 US$
9,22 US$
100
0,71 US$
70,90 US$
500
0,63 US$
313,00 US$
1000
0,49 US$
494,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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