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BSC190N12NS3 G

BSC190N12NS3 G
Mfr. #:
BSC190N12NS3 G
Fabricante:
Infineon Technologies
Descripción:
Trans MOSFET N-CH 120V 8.6A 8-Pin TDSON T/R (Alt: BSC190N12NS3 G)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC190N12NS3 G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
BSC190N12NS3 G más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
OptiMOS 3
embalaje
Carrete
Alias ​​de parte
BSC190N12NS3GATMA1 BSC190N12NS3GXT SP000652752
Estilo de montaje
SMD / SMT
Nombre comercial
OptiMOS
Paquete-Estuche
TDSON-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
69 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
4 ns
Hora de levantarse
16 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
44 A
Vds-Drain-Source-Breakdown-Voltage
120 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V
Resistencia a la fuente de desagüe de Rds
19 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
22 ns
Tiempo de retardo de encendido típico
17 ns
Qg-Gate-Charge
26 nC
Transconductancia directa-Mín.
45 S 23 S
Tags
BSC190N12, BSC190N1, BSC190, BSC19, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descripción Valores Precio
BSC190N12NS3GATMA1
DISTI # V72:2272_06384232		Infineon Technologies AGTrans MOSFET N-CH 120V 8.6A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		63
  • 100:$1.0810
  • 25:$1.2373
  • 10:$1.3234
  • 1:$1.4602
BSC190N12NS3GATMA1
DISTI # BSC190N12NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 120V 44A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.6818
BSC190N12NS3GATMA1
DISTI # BSC190N12NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 120V 44A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.7920
  • 500:$1.0032
  • 100:$1.2935
  • 10:$1.6370
  • 1:$1.8500
BSC190N12NS3GATMA1
DISTI # BSC190N12NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 120V 44A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.7920
  • 500:$1.0032
  • 100:$1.2935
  • 10:$1.6370
  • 1:$1.8500
BSC190N12NS3GATMA1
DISTI # 30729211		Infineon Technologies AGTrans MOSFET N-CH 120V 8.6A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		63
  • 100:$1.0791
  • 25:$1.2353
  • 10:$1.3218
BSC190N12NS3 G
DISTI # BSC190N12NS3 G		Infineon Technologies AGTrans MOSFET N-CH 120V 8.6A 8-Pin TDSON T/R (Alt: BSC190N12NS3 G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC190N12NS3GXT
    DISTI # BSC190N12NS3GATMA1    		Infineon Technologies AGTrans MOSFET N-CH 120V 8.6A 8-Pin TDSON EP - Tape and Reel (Alt: BSC190N12NS3GATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 5000:$0.6709
    • 10000:$0.6469
    • 20000:$0.6229
    • 30000:$0.6019
    • 50000:$0.5919
    BSC190N12NS3GATMA1
    DISTI # 50AC4329    		Infineon Technologies AGTRANS MOSFET N-CH 120V 8.6A AUTOMOTIVE 8-PIN TDSON EP T/R50
    • 1:$1.5700
    • 100:$1.2600
    • 250:$1.1400
    • 500:$1.0500
    • 1000:$0.9710
    BSC190N12NS3GATMA1
    DISTI # 13AC8341    		Infineon Technologies AGMOSFET, N-CH, 120V, 44A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:44A,Drain Source Voltage Vds:120V,On Resistance Rds(on):0.0166ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes478
    • 1:$2.0400
    • 10:$1.8000
    • 25:$1.6700
    • 50:$1.5500
    • 100:$1.4200
    • 250:$1.2700
    • 500:$1.1000
    • 1000:$0.8710
    BSC190N12NS3 G
    DISTI # 726-BSC190N12NS3GXT    		Infineon Technologies AGMOSFET N-Ch 120V 44A TDSON-8 OptiMOS 3
    RoHS: Compliant    		0
    • 1:$1.5300
    • 10:$1.3100
    • 100:$1.0100
    • 500:$0.8860
    • 1000:$0.6990
    BSC190N12NS3GATMA1
    DISTI # C1S322000595871    		Infineon Technologies AGMOSFETs
    RoHS: Compliant    		63
    • 25:$1.2373
    • 10:$1.3234
    BSC190N12NS3GATMA1
    DISTI # 2725816    		Infineon Technologies AGMOSFET, N-CH, 120V, 44A, TDSON
    RoHS: Compliant    		733
    • 5:£1.7700
    • 25:£1.6300
    • 100:£1.2900
    BSC190N12NS3GATMA1
    DISTI # 2725816    		Infineon Technologies AGMOSFET, N-CH, 120V, 44A, TDSON
    RoHS: Compliant    		478
    • 1:$2.9600
    • 10:$2.6100
    • 100:$2.0700
    Imagen Parte # Descripción
    BSC190N15NS3 G

    Mfr.#: BSC190N15NS3 G

    OMO.#: OMO-BSC190N15NS3-G

    		 MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3
    BSC190N15NS3GATMA1

    Mfr.#: BSC190N15NS3GATMA1

    OMO.#: OMO-BSC190N15NS3GATMA1

    		 MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3
    BSC190N12NS3 G

    Mfr.#: BSC190N12NS3 G

    OMO.#: OMO-BSC190N12NS3-G

    		 MOSFET N-Ch 120V 44A TDSON-8 OptiMOS 3
    BSC190N12NS3GATMA1

    Mfr.#: BSC190N12NS3GATMA1

    OMO.#: OMO-BSC190N12NS3GATMA1

    		 MOSFET MV POWER MOS
    BSC190N04LSG

    Mfr.#: BSC190N04LSG

    OMO.#: OMO-BSC190N04LSG-1190

    		 Nuevo y original
    BSC190N12NS3G

    Mfr.#: BSC190N12NS3G

    OMO.#: OMO-BSC190N12NS3G-1190

    		 Nuevo y original
    BSC190N12NS3GATMA1

    Mfr.#: BSC190N12NS3GATMA1

    OMO.#: OMO-BSC190N12NS3GATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 120V 44A TDSON-8
    BSC190N15NS3

    Mfr.#: BSC190N15NS3

    OMO.#: OMO-BSC190N15NS3-1190

    		 Nuevo y original
    BSC190N15NS3G

    Mfr.#: BSC190N15NS3G

    OMO.#: OMO-BSC190N15NS3G-1190

    		 Trans MOSFET N-CH 150V 50A 8-Pin TDSON EP T/R
    BSC190N15NS3GATMA1

    Mfr.#: BSC190N15NS3GATMA1

    OMO.#: OMO-BSC190N15NS3GATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 150V 50A TDSON-8
    Disponibilidad
    Valores:
    Available
    En orden:
    2000
    Ingrese la cantidad:
    El precio actual de BSC190N12NS3 G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,05 US$
    1,05 US$
    10
    1,00 US$
    9,96 US$
    100
    0,94 US$
    94,37 US$
    500
    0,89 US$
    445,60 US$
    1000
    0,84 US$
    838,80 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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