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BSC196N10NSGATMA1

BSC196N10NSGATMA1
Mfr. #:
BSC196N10NSGATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET MV POWER MOS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC196N10NSGATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TDSON-8
Nombre comercial:
OptiMOS
Embalaje:
Carrete
Altura:
1.27 mm
Longitud:
5.9 mm
Ancho:
5.15 mm
Marca:
Infineon Technologies
Tipo de producto:
MOSFET
Subcategoría:
MOSFET
Parte # Alias:
BSC196N10NS BSC196N1NSGXT G SP000379604
Tags
BSC196N10NSG, BSC196, BSC19, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ureElectronics
NChannel100V196mOhmOptiMOS2PowerTransistorPGTDSON8
***ineonSCT
Infineons100VOptiMOSpowerMOSFETsoffersuperiorsolutionsforhighefficiencyhighpowerdensitySMPSPGTDSON8RoHS
***ment14APAC
MOSFETNCH100V45APGTDSON8;TransistorPolarityNChannel;ContinuousDrainCurrentId45A;DrainSourceVoltageVds100V;OnResistanceRdson167mohm;RdsonTestVoltageVgs10V;ThresholdVoltageVgsTyp3V;PowerDissipationPd78W;OperatingTemperatureRange55Cto150C;TransistorCaseStylePGTSDSON;NoofPins8;SVHCNoSVHC20Jun2011;CurrentIdMax45A;PowerDissipationPd78W;TransistorTypePowerMOSFET;VoltageVgsMax20V
***ineon
The100VOptiMOSfamilyofferssuperiorsolutionsforhighefficiencyhighpowerdensitySMPSComparedtothenextbesttechnologythisfamilyachievesareductionof30inbothRDSonandFOMfigureofmeritSummaryofFeaturesExcellentswitchingperformance;WorldslowestRDSon;VerylowQgandQgd;ExcellentgatechargexRDSonproductFOM;RoHScomplianthalogenfree;MSL1rated2BenefitsEnvironmentallyfriendly;Increasedefficiency;Highestpowerdensity;Lessparallelingrequired;Smallestboardspaceconsumption;EasytodesignproductsTargetApplicationsSynchronousrectificationforACDCSMPS;Motorcontrolfor48V80Vsystemsiedomesticvehiclespowertoolstrucks;IsolatedDCDCconverterstelecomanddatacomsystems;Oringswitchesandcircuitbreakersin48Vsystems;ClassDaudioamplifiers;UninterruptablepowersuppliesUPS
Parte # Mfg. Descripción Valores Precio
BSC196N10NSGATMA1
DISTI # BSC196N10NSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 45A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.4818
BSC196N10NSGATMA1
DISTI # BSC196N10NSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 45A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.5596
  • 500:$0.7089
  • 100:$0.9141
  • 10:$1.1570
  • 1:$1.3100
BSC196N10NSGATMA1
DISTI # BSC196N10NSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 45A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.5596
  • 500:$0.7089
  • 100:$0.9141
  • 10:$1.1570
  • 1:$1.3100
BSC196N10NSGATMA1
DISTI # BSC196N10NSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 8.5A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC196N10NSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.3789
  • 10000:$0.3649
  • 20000:$0.3519
  • 30000:$0.3399
  • 50000:$0.3339
BSC196N10NSGATMA1
DISTI # 60R2519		Infineon Technologies AGMOSFET, N CHANNEL, 100V, 45A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:45A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0167ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes5000
  • 1:$1.0900
  • 10:$0.9220
  • 100:$0.7090
  • 500:$0.6260
  • 1000:$0.4940
BSC196N10NS G
DISTI # 726-BSC196N10NSG		Infineon Technologies AGMOSFET N-Ch 100V 45A TDSON-8 OptiMOS 2
RoHS: Compliant		168
  • 1:$1.0900
  • 10:$0.9220
  • 100:$0.7090
  • 500:$0.6260
  • 1000:$0.4940
BSC196N10NSGATMA1
DISTI # 1775474		Infineon Technologies AGMOSFET, N CH, 100V, 45A, PG-TDSON-8
RoHS: Compliant		5000
  • 1:$1.7300
  • 10:$1.4600
  • 100:$1.1300
  • 500:$0.9910
  • 1000:$0.7820
  • 5000:$0.7730
BSC196N10NSGATMA1
DISTI # 1775474		Infineon Technologies AGMOSFET, N CH, 100V, 45A, PG-TDSON-8
RoHS: Compliant		5000
  • 5:£0.9010
  • 25:£0.7450
  • 100:£0.6780
Imagen Parte # Descripción
BSC196N10NS G

Mfr.#: BSC196N10NS G

OMO.#: OMO-BSC196N10NS-G

 MOSFET N-Ch 100V 45A TDSON-8 OptiMOS 2
BSC196N10NSGATMA1

Mfr.#: BSC196N10NSGATMA1

OMO.#: OMO-BSC196N10NSGATMA1

 MOSFET MV POWER MOS
BSC196N10NS

Mfr.#: BSC196N10NS

OMO.#: OMO-BSC196N10NS-1190

 Nuevo y original
BSC196N10NS G

Mfr.#: BSC196N10NS G

OMO.#: OMO-BSC196N10NS-G-1190

 MOSFET N-Ch 100V 45A TDSON-8 OptiMOS 2
BSC196N10NSG

Mfr.#: BSC196N10NSG

OMO.#: OMO-BSC196N10NSG-1190

 Nuevo y original
BSC196N10NSGATMA1

Mfr.#: BSC196N10NSGATMA1

OMO.#: OMO-BSC196N10NSGATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 100V 45A TDSON-8
BSC196N10NSGATMA1 , TDZF

Mfr.#: BSC196N10NSGATMA1 , TDZF

OMO.#: OMO-BSC196N10NSGATMA1-TDZF-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de BSC196N10NSGATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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