BSC196N10NS G

BSC196N10NS G
Mfr. #:
BSC196N10NS G
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 100V 45A TDSON-8 OptiMOS 2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC196N10NS G Ficha de datos
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Más información:
BSC196N10NS G más información
Atributo del producto
Valor de atributo
Fabricante
INFINEON
categoria de producto
FET - Single
Serie
OptiMOS 2
embalaje
Carrete
Alias ​​de parte
BSC196N10NSGATMA1 BSC196N10NSGXT SP000379604
Estilo de montaje
SMD / SMT
Nombre comercial
OptiMOS
Paquete-Estuche
TDSON-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Fuente triple de drenaje cuádruple simple
Tipo transistor
1 N-Channel
Disipación de potencia Pd
78 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
5 ns
Hora de levantarse
22 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
8.5 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Resistencia a la fuente de desagüe de Rds
19.6 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
18 ns
Tiempo de retardo de encendido típico
16 ns
Modo de canal
Mejora
Tags
BSC196N10NSG, BSC196, BSC19, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Parte # Mfg. Descripción Valores Precio
BSC196N10NSGATMA1
DISTI # BSC196N10NSGATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 100V 45A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$0.4818
BSC196N10NSGATMA1
DISTI # BSC196N10NSGATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 100V 45A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.5596
  • 500:$0.7089
  • 100:$0.9141
  • 10:$1.1570
  • 1:$1.3100
BSC196N10NSGATMA1
DISTI # BSC196N10NSGATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 100V 45A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.5596
  • 500:$0.7089
  • 100:$0.9141
  • 10:$1.1570
  • 1:$1.3100
BSC196N10NSGATMA1
DISTI # BSC196N10NSGATMA1
Infineon Technologies AGTrans MOSFET N-CH 100V 8.5A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC196N10NSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.3789
  • 10000:$0.3649
  • 20000:$0.3519
  • 30000:$0.3399
  • 50000:$0.3339
BSC196N10NSGATMA1
DISTI # 60R2519
Infineon Technologies AGMOSFET, N CHANNEL, 100V, 45A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:45A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0167ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes5000
  • 1:$1.0900
  • 10:$0.9220
  • 100:$0.7090
  • 500:$0.6260
  • 1000:$0.4940
BSC196N10NS G
DISTI # 726-BSC196N10NSG
Infineon Technologies AGMOSFET N-Ch 100V 45A TDSON-8 OptiMOS 2
RoHS: Compliant
168
  • 1:$1.0900
  • 10:$0.9220
  • 100:$0.7090
  • 500:$0.6260
  • 1000:$0.4940
BSC196N10NSGATMA1
DISTI # 1775474
Infineon Technologies AGMOSFET, N CH, 100V, 45A, PG-TDSON-8
RoHS: Compliant
5000
  • 5:£0.9010
  • 25:£0.7450
  • 100:£0.6780
BSC196N10NSGATMA1
DISTI # 1775474
Infineon Technologies AGMOSFET, N CH, 100V, 45A, PG-TDSON-8
RoHS: Compliant
5000
  • 1:$1.7300
  • 10:$1.4600
  • 100:$1.1300
  • 500:$0.9910
  • 1000:$0.7820
  • 5000:$0.7730
Imagen Parte # Descripción
BSC196N10NS G

Mfr.#: BSC196N10NS G

OMO.#: OMO-BSC196N10NS-G

MOSFET N-Ch 100V 45A TDSON-8 OptiMOS 2
BSC196N10NSGATMA1

Mfr.#: BSC196N10NSGATMA1

OMO.#: OMO-BSC196N10NSGATMA1

MOSFET MV POWER MOS
BSC196N10NS

Mfr.#: BSC196N10NS

OMO.#: OMO-BSC196N10NS-1190

Nuevo y original
BSC196N10NS G

Mfr.#: BSC196N10NS G

OMO.#: OMO-BSC196N10NS-G-1190

MOSFET N-Ch 100V 45A TDSON-8 OptiMOS 2
BSC196N10NSG

Mfr.#: BSC196N10NSG

OMO.#: OMO-BSC196N10NSG-1190

Nuevo y original
BSC196N10NSGATMA1

Mfr.#: BSC196N10NSGATMA1

OMO.#: OMO-BSC196N10NSGATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 100V 45A TDSON-8
BSC196N10NSGATMA1 , TDZF

Mfr.#: BSC196N10NSGATMA1 , TDZF

OMO.#: OMO-BSC196N10NSGATMA1-TDZF-1190

Nuevo y original
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de BSC196N10NS G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,74 US$
0,74 US$
10
0,70 US$
7,04 US$
100
0,67 US$
66,69 US$
500
0,63 US$
314,95 US$
1000
0,59 US$
592,80 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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