 |  | | |
| PartNumber | BSC196N10NS G | BSC196N10NS | BSC196N10NSG |
| Description | MOSFET N-Ch 100V 45A TDSON-8 OptiMOS 2 | ||
| Manufacturer | Infineon | FEELING | Infineon Technologies |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TDSON-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 8.5 A | - | - |
| Rds On Drain Source Resistance | 19.6 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 78 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Series | OptiMOS 2 | - | OptiMOS |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 22 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 18 ns | - | - |
| Typical Turn On Delay Time | 16 ns | - | - |
| Part # Aliases | BSC196N10NSGATMA1 BSC196N1NSGXT SP000379604 | - | - |
| Unit Weight | 0.006632 oz | - | - |
| Package Case | - | - | 8-PowerTDFN |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | PG-TDSON-8 |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 78W |
| Drain to Source Voltage Vdss | - | - | 100V |
| Input Capacitance Ciss Vds | - | - | 2300pF @ 50V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 8.5A (Ta), 45A (Tc) |
| Rds On Max Id Vgs | - | - | 19.6 mOhm @ 45A, 10V |
| Vgs th Max Id | - | - | 4V @ 42μA |
| Gate Charge Qg Vgs | - | - | 34nC @ 10V |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC196N10NS G | MOSFET N-Ch 100V 45A TDSON-8 OptiMOS 2 | |
| BSC196N10NSGATMA1 | MOSFET N-CH 100V 45A TDSON-8 | ||
Infineon Technologies |
BSC196N10NSGATMA1 | MOSFET MV POWER MOS | |
| BSC196N10NS | Nuevo y original | ||
| BSC196N10NS G | MOSFET N-Ch 100V 45A TDSON-8 OptiMOS 2 | ||
| BSC196N10NSG | Nuevo y original | ||
| BSC196N10NSGATMA1 , TDZF | Nuevo y original |