BSC196N10NSG

BSC196N10NSGATMA1 vs BSC196N10NSG vs BSC196N10NSGATMA1 , TDZF

 
PartNumberBSC196N10NSGATMA1BSC196N10NSGBSC196N10NSGATMA1 , TDZF
DescriptionMOSFET MV POWER MOS
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETFETs - Single-
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
TradenameOptiMOS--
PackagingReelDigi-ReelR Alternate Packaging-
Height1.27 mm--
Length5.9 mm--
Width5.15 mm--
BrandInfineon Technologies--
Product TypeMOSFET--
SubcategoryMOSFETs--
Part # AliasesBSC196N10NS BSC196N1NSGXT G SP000379604--
Series-OptiMOS-
Package Case-8-PowerTDFN-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-PG-TDSON-8-
FET Type-MOSFET N-Channel, Metal Oxide-
Power Max-78W-
Drain to Source Voltage Vdss-100V-
Input Capacitance Ciss Vds-2300pF @ 50V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-8.5A (Ta), 45A (Tc)-
Rds On Max Id Vgs-19.6 mOhm @ 45A, 10V-
Vgs th Max Id-4V @ 42μA-
Gate Charge Qg Vgs-34nC @ 10V-
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
BSC196N10NSGATMA1 MOSFET MV POWER MOS
BSC196N10NSG Nuevo y original
BSC196N10NSGATMA1 , TDZF Nuevo y original
Infineon Technologies
Infineon Technologies
BSC196N10NSGATMA1 MOSFET N-CH 100V 45A TDSON-8
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