PartNumber | SPD02N50C3 | SPD01N60C3BTMA1 | SPD02N50C3BTMA1 |
Description | IGBT Transistors MOSFET N-Ch 500V 1.8A DPAK-2 CoolMOS C3 | MOSFET N-CH 650V 0.8A TO-252 | LOW POWER_LEGACY |
Manufacturer | INFINEON | - | - |
Product Category | FETs - Single | - | - |
Series | CoolMOS C3 | - | - |
Packaging | Reel | - | - |
Part Aliases | SP000313942 SPD02N50C3BTMA1 SPD02N50C3XT | - | - |
Unit Weight | 0.139332 oz | - | - |
Mounting Style | SMD/SMT | - | - |
Tradename | CoolMOS | - | - |
Package Case | TO-252-3 | - | - |
Technology | Si | - | - |
Number of Channels | 1 Channel | - | - |
Configuration | Single | - | - |
Transistor Type | 1 N-Channel | - | - |
Pd Power Dissipation | 25 W | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Fall Time | 15 ns | - | - |
Rise Time | 5 ns | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Id Continuous Drain Current | 1.8 A | - | - |
Vds Drain Source Breakdown Voltage | 500 V | - | - |
Rds On Drain Source Resistance | 3 Ohms | - | - |
Transistor Polarity | N-Channel | - | - |
Typical Turn Off Delay Time | 70 ns | - | - |
Typical Turn On Delay Time | 10 ns | - | - |
Channel Mode | Enhancement | - | - |
Fabricante | Parte # | Descripción | RFQ |
---|---|---|---|
Infineon Technologies |
SPD02N80C3ATMA1 | MOSFET LOW POWER_LEGACY | |
SPD03N50C3ATMA1 | MOSFET LOW POWER_LEGACY | ||
SPD03N60C3ATMA1 | MOSFET LOW POWER_LEGACY | ||
SPD02N50C3 | IGBT Transistors MOSFET N-Ch 500V 1.8A DPAK-2 CoolMOS C3 | ||
SPD03N60C3ATMA1 | MOSFET N-CH 600V 3.2A DPAK | ||
SPD02N80C3ATMA1 | MOSFET N-CH 800V 2A 3TO252 | ||
SPD02N80C3BTMA1 | MOSFET N-CH 800V 2A TO-252 | ||
SPD01N60C3BTMA1 | MOSFET N-CH 650V 0.8A TO-252 | ||
SPD02N50C3BTMA1 | LOW POWER_LEGACY | ||
SPD02N60C3BTMA1 | MOSFET N-CH 650V 1.8A DPAK | ||
SPD02N60S5BTMA1 | MOSFET N-CH 600V 1.8A TO-252 | ||
SPD03N50C3ATMA1 | MOSFET N-CH 500V 3.2A DPAK | ||
SPD03N50C3BTMA1 | MOSFET N-CH 560V 3.2A DPAK | ||
Infineon Technologies |
SPD02N60C3BTMA1 | MOSFET LOW POWER_LEGACY | |
SPD03N50C3BTMA1 | MOSFET LOW POWER_LEGACY | ||
SPD03N60C3 | IGBT Transistors MOSFET N-Ch 600V 3.2A DPAK-2 CoolMOS C3 | ||
SPD03N50C3 | IGBT Transistors MOSFET N-Ch 500V 3.2A DPAK-2 CoolMOS C3 | ||
SPD02N60S5 | IGBT Transistors MOSFET N-Ch 600V 1.8A DPAK-2 CoolMOS S5 | ||
SPD02N80C3 | IGBT Transistors MOSFET N-Ch 800V 2A DPAK-2 CoolMOS C3 | ||
SPD02N80C3ATMA1-CUT TAPE | Nuevo y original | ||
SPD03N50C3ATMA1-CUT TAPE | Nuevo y original | ||
SPD0-4FB | Nuevo y original | ||
SPD0011M | Nuevo y original | ||
SPD0011MQT6 | Nuevo y original | ||
SPD01-O | Nuevo y original | ||
SPD015A | Nuevo y original | ||
SPD015GD | Nuevo y original | ||
SPD01N60 | Nuevo y original | ||
SPD01N60C3 | MOSFET N-Ch 600V 800mA DPAK-2 CoolMOS C3 | ||
SPD02N50C3. | Nuevo y original | ||
SPD02N60 | Nuevo y original | ||
SPD02N60C3 | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | ||
SPD02N60C3(02N60C3) | Nuevo y original | ||
SPD02N60C3,02N60C3 | Nuevo y original | ||
SPD02N60C3_05 | Nuevo y original | ||
SPD02N60C5 | Nuevo y original | ||
SPD02N60S5 02N60S5 | Nuevo y original | ||
SPD02N80 | Nuevo y original | ||
SPD02N80C3,02N80C3 | Nuevo y original | ||
SPD02N80C3. | Nuevo y original | ||
SPD02U60C3 | Nuevo y original | ||
SPD0301ZD | Nuevo y original | ||
SPD030G | PRESSURE SENSOR, 0-200KPA, DIP-6, Pressure Type:Gauge, Sensitivity, V/P:-, Operating Pressure Min:0kPa, Operating Pressure Max:200kPa, Supply Voltage Min:0V, Supply Voltage Max:10V, Sensor Case | ||
SPD031N06L 031N06L 100A 60V | Nuevo y original | ||
SPD03N50C3 FQD3N60C | Nuevo y original | ||
SPD03N50C3_08 | Nuevo y original | ||
SPD03N60 | Nuevo y original | ||
SPD03N60C3 03N60C3 INFI | Nuevo y original | ||
SPD03N60C3,03N60C3 | Nuevo y original | ||
SPD03N60C3,03N60C3, | Nuevo y original |