SPD02N50C3

SPD02N50C3
Mfr. #:
SPD02N50C3
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors MOSFET N-Ch 500V 1.8A DPAK-2 CoolMOS C3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SPD02N50C3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
INFINEON
categoria de producto
FET - Single
Serie
CoolMOS C3
embalaje
Carrete
Alias ​​de parte
SP000313942 SPD02N50C3BTMA1 SPD02N50C3XT
Unidad de peso
0.139332 oz
Estilo de montaje
SMD / SMT
Nombre comercial
CoolMOS
Paquete-Estuche
TO-252-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
25 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
15 ns
Hora de levantarse
5 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
1.8 A
Vds-Drain-Source-Breakdown-Voltage
500 V
Resistencia a la fuente de desagüe de Rds
3 Ohms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
70 ns
Tiempo de retardo de encendido típico
10 ns
Modo de canal
Mejora
Tags
SPD02N5, SPD02N, SPD02, SPD0, SPD
Service Guarantees

We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 560 V 3 Ohm Cool MOS™ Power Transistor - PG-TO252-3
***ical
Trans MOSFET N-CH 500V 1.8A 3-Pin(2+Tab) DPAK T/R
***p One Stop Global
Trans MOSFET N-CH 500V 1.8A 3-Pin(2+Tab) TO-252
***et Europe
Trans MOSFET N-CH 500V 1.8A 3-Pin TO-252 T/R
***ark
MOSFET, N CHANNEL, 560V, 1.8A, TO-252
***i-Key
LOW POWER_LEGACY
***ineon
Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
***ment14 APAC
Prices include import duty and tax. MOSFET, N, 500V, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:500V; On Resistance Rds(on):2.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:25W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:1.8A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:5.4A; Termination Type:Surface Mount Device; Voltage Vds:500V; Voltage Vds Typ:560V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***nell
MOSFET, N, 500V, D-PAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:1.8A; Tensione Drain Source Vds:500V; Resistenza di Attivazione Rds(on):2.7ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:25W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:1.8A; Corrente di Impulso Idm:5.4A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Temperatura di Esercizio Min:-55°C; Tensione Vds:500V; Tensione Vds Tipica:560V; Tensione Vgs Max:20V; Tensione Vgs di Misurazione Rds on:10V; Tipo di Terminazione:Dispositivo a Montaggio Superficiale
Parte # Mfg. Descripción Valores Precio
SPD02N50C3BTMA1
DISTI # V72:2272_06384768
Infineon Technologies AGTrans MOSFET N-CH 500V 1.8A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
2200
  • 75000:$0.4733
  • 30000:$0.4735
  • 15000:$0.4764
  • 6000:$0.4829
  • 3000:$0.4864
  • 1000:$0.4950
  • 500:$0.5222
  • 250:$0.5928
  • 100:$0.6469
  • 50:$0.6936
  • 25:$0.8102
  • 10:$0.8295
  • 1:$0.9367
SPD02N50C3
DISTI # SPD02N50C3INTR-ND
Infineon Technologies AGMOSFET N-CH 560V 1.8A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    SPD02N50C3BTMA1
    DISTI # SPD02N50C3BTMA1-ND
    Infineon Technologies AGLOW POWER_LEGACY
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)
    Limited Supply - Call
      SPD02N50C3BTMA1
      DISTI # 27619286
      Infineon Technologies AGTrans MOSFET N-CH 500V 1.8A 3-Pin(2+Tab) DPAK T/R
      RoHS: Compliant
      2200
      • 1000:$0.4950
      • 500:$0.5222
      • 250:$0.5928
      • 100:$0.6469
      • 50:$0.6936
      • 25:$0.8102
      • 16:$0.8295
      SPD02N50C3
      DISTI # 726-SPD02N50C3
      Infineon Technologies AGMOSFET N-Ch 500V 1.8A DPAK-2 CoolMOS C3
      RoHS: Compliant
      2200
      • 1:$0.9700
      • 10:$0.8270
      • 100:$0.6350
      • 500:$0.5610
      • 1000:$0.4430
      • 2500:$0.3930
      SPD02N50C3BTMA1
      DISTI # N/A
      Infineon Technologies AGMOSFET LOW POWER_LEGACY0
        SPD02N50C3Infineon Technologies AGPower Field-Effect Transistor, 1.8A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
        RoHS: Compliant
        69500
        • 1000:$0.3800
        • 500:$0.4000
        • 100:$0.4200
        • 25:$0.4400
        • 1:$0.4700
        SPD02N50C3BTMA1Infineon Technologies AGPower Field-Effect Transistor, 1.8A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
        RoHS: Compliant
        160000
        • 1000:$0.3800
        • 500:$0.4000
        • 100:$0.4200
        • 25:$0.4400
        • 1:$0.4700
        SPD02N50C3
        DISTI # 1471785
        Infineon Technologies AGMOSFET, N, 500V, D-PAK
        RoHS: Compliant
        0
        • 1:$1.5400
        • 10:$1.3200
        • 100:$1.0100
        • 500:$0.8880
        • 1000:$0.7020
        • 2500:$0.6320
        SPD02N50C3
        DISTI # 1471785RL
        Infineon Technologies AGMOSFET, N, 500V, D-PAK
        RoHS: Compliant
        0
        • 1:$1.5400
        • 10:$1.3200
        • 100:$1.0100
        • 500:$0.8880
        • 1000:$0.7020
        • 2500:$0.6320
        Imagen Parte # Descripción
        SPD02N60C3BTMA1

        Mfr.#: SPD02N60C3BTMA1

        OMO.#: OMO-SPD02N60C3BTMA1

        MOSFET LOW POWER_LEGACY
        SPD02N50C3

        Mfr.#: SPD02N50C3

        OMO.#: OMO-SPD02N50C3-INFINEON-TECHNOLOGIES

        IGBT Transistors MOSFET N-Ch 500V 1.8A DPAK-2 CoolMOS C3
        SPD02N80C3ATMA1-CUT TAPE

        Mfr.#: SPD02N80C3ATMA1-CUT TAPE

        OMO.#: OMO-SPD02N80C3ATMA1-CUT-TAPE-1190

        Nuevo y original
        SPD02N80C3ATMA1

        Mfr.#: SPD02N80C3ATMA1

        OMO.#: OMO-SPD02N80C3ATMA1-INFINEON-TECHNOLOGIES

        MOSFET N-CH 800V 2A 3TO252
        SPD02N50C3.

        Mfr.#: SPD02N50C3.

        OMO.#: OMO-SPD02N50C3--1190

        Nuevo y original
        SPD02N50C3BTMA1

        Mfr.#: SPD02N50C3BTMA1

        OMO.#: OMO-SPD02N50C3BTMA1-INFINEON-TECHNOLOGIES

        LOW POWER_LEGACY
        SPD02N60C3_05

        Mfr.#: SPD02N60C3_05

        OMO.#: OMO-SPD02N60C3-05-1190

        Nuevo y original
        SPD02N60S5 02N60S5

        Mfr.#: SPD02N60S5 02N60S5

        OMO.#: OMO-SPD02N60S5-02N60S5-1190

        Nuevo y original
        SPD02N60S5BTMA1

        Mfr.#: SPD02N60S5BTMA1

        OMO.#: OMO-SPD02N60S5BTMA1-INFINEON-TECHNOLOGIES

        MOSFET N-CH 600V 1.8A TO-252
        SPD02N80

        Mfr.#: SPD02N80

        OMO.#: OMO-SPD02N80-1190

        Nuevo y original
        Disponibilidad
        Valores:
        Available
        En orden:
        5500
        Ingrese la cantidad:
        El precio actual de SPD02N50C3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        0,57 US$
        0,57 US$
        10
        0,54 US$
        5,42 US$
        100
        0,51 US$
        51,30 US$
        500
        0,48 US$
        242,25 US$
        1000
        0,46 US$
        456,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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