 | |  | |
| PartNumber | SPD04N50C3ATMA1 | SPD03N60S5BTMA1 | SPD03N60C3BTMA1 |
| Description | MOSFET LOW POWER_LEGACY | MOSFET LOW POWER_LEGACY | MOSFET N-CH 650V 3.2A DPAK |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Tradename | CoolMOS | CoolMOS | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | CoolMOS C3 | - | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SP001117762 SPD04N50C3 | SP000307393 SPD03N60S5 SPD03N60S5XT | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
SPD04N80C3ATMA1 | MOSFET LOW POWER_LEGACY | |
| SPD04P10P G | MOSFET P-Ch -100V -4A DPAK-2 | ||
| SPD04P10PGBTMA1 | MOSFET P-Ch -100V -4A DPAK-2 | ||
| SPD04N50C3ATMA1 | MOSFET LOW POWER_LEGACY | ||
| SPD04N60C3ATMA1 | MOSFET LOW POWER_LEGACY | ||
| SPD04P10PLGBTMA1 | MOSFET P-CH 100V 4.2A TO252-3 | ||
| SPD04N60S5 | IGBT Transistors MOSFET N-Ch 600V 4.5A DPAK-2 CoolMOS S5 | ||
| SPD04N60C3 | IGBT Transistors MOSFET N-Ch 600V 4.5A DPAK-2 CoolMOS C3 | ||
| SPD04N60S5BTMA1 | MOSFET N-CH 600V 4.5A TO252 | ||
| SPD04N60C3BTMA1 | MOSFET N-CH 650V 4.5A DPAK | ||
| SPD04N60C3ATMA1 | MOSFET N-CH 600V 4.5A TO252-3 | ||
| SPD04N50C3ATMA1 | MOSFET N-CH 500V 4.5A DPAK | ||
| SPD04N80C3ATMA1 | MOSFET N-CH 800V 4A 3TO252 | ||
| SPD03N60C3BTMA1 | MOSFET N-CH 650V 3.2A DPAK | ||
| SPD03N60S5BTMA1 | MOSFET N-CH 600V 3.2A TO-252 | ||
| SPD04N50C3BTMA1 | MOSFET N-CH 560V 4.5A DPAK | ||
| SPD04N50C3T | MOSFET N-CH 560V 4.5A DPAK | ||
| SPD04N80C3BTMA1 | MOSFET N-CH 800V 4A TO-252 | ||
| SPD04P10P G | MOSFET P-Ch -100V -4A DPAK-2 | ||
| SPD04P10PGBTMA1 | MOSFET P-CH 100V 4A TO252-3 | ||
Infineon Technologies |
SPD04N80C3BTMA1 | MOSFET N-Ch 800V 4A DPAK-2 CoolMOS C3 | |
| SPD04P10PLGBTMA1 | MOSFET SMALL SIGNAL+P-CH | ||
| SPD04N50C3BTMA1 | MOSFET LOW POWER_LEGACY | ||
| SPD03N60S5BTMA1 | MOSFET LOW POWER_LEGACY | ||
| SPD04N60S5BTMA1 | MOSFET LOW POWER_LEGACY | ||
| SPD04N60C3BTMA1 | MOSFET LOW POWER_LEGACY | ||
| SPD04N50C3 | IGBT Transistors MOSFET N-Ch 500V 4.5A DPAK-2 CoolMOS C3 | ||
| SPD04N80C3 | IGBT Transistors MOSFET N-Ch 800V 4A DPAK-2 CoolMOS C3 | ||
| SPD06N60C3 | MOSFET N-Ch 650V 6.2A DPAK-2 CoolMOS C3 | ||
| SPD04N60C | Nuevo y original | ||
| SPD03N60S5 | MOSFET N-Ch 600V 3.2A DPAK-2 CoolMOS S5 | ||
| SPD03N60S5XT | Trans MOSFET N-CH 600V 3.2A 3-Pin(2+Tab) TO-252 - Bulk (Alt: SPD03N60S5XT) | ||
| SPD04N60C2 | Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | ||
| SPD04P10PG | Power Field-Effect Transistor, 4A I(D), 100V, 1000ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | ||
| SPD03N60C3INTR | Nuevo y original | ||
| SPD04N03LA | Nuevo y original | ||
| SPD04N50C3 STK830D | Nuevo y original | ||
| SPD04N60 | Nuevo y original | ||
| SPD04N60C3 04N60C3 | Nuevo y original | ||
| SPD04N60C3 HF | Nuevo y original | ||
| SPD04N60C3,04N60C3, | Nuevo y original | ||
| SPD04N60C3,SPD06N80C3, | Nuevo y original | ||
| SPD04N60C3D-PACK | Nuevo y original | ||
| SPD04N60C3G | Nuevo y original | ||
| SPD04N60C3XT | Nuevo y original | ||
| SPD04N80C3,D04N80C3, | Nuevo y original | ||
| SPD04N80C3/SL4N80CD | Nuevo y original | ||
| SPD04P10P | Nuevo y original | ||
| SPD04P10PL G | Trans MOSFET P-CH 100V 4.2A 3-Pin(2+Tab) TO-252 (Alt: SPD04P10PL G) | ||
| SPD04P10PLG | -100V,-4.2A,P Channel Power MOSFET |