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SPD02N60C3BTMA1

SPD02N60C3BTMA1
Mfr. #:
SPD02N60C3BTMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET LOW POWER_LEGACY
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SPD02N60C3BTMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Nombre comercial:
CoolMOS
Embalaje:
Carrete
Altura:
2.3 mm
Longitud:
6.5 mm
Ancho:
6.22 mm
Marca:
Infineon Technologies
Tipo de producto:
MOSFET
Subcategoría:
MOSFET
Parte # Alias:
SP000308771 SPD02N60C3 SPD02N60C3XT
Unidad de peso:
0.139332 oz
Tags
SPD02N60C3, SPD02N60C, SPD02N6, SPD02N, SPD02, SPD0, SPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) TO-252
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ment14 APAC
MOSFET, N, COOLMOS, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:650V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:D-PAK; Avalanche Single Pulse Energy Eas:50mJ; Current Iar:1.8A; Current Id Max:1.8A; Current Idss Max:1µA; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:3ohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Power Dissipation Ptot Max:25W; Pulse Current Idm:5.4A; Rate of Voltage Change dv / dt:50V/ns; Repetitive Avalanche Energy Max:0.07mJ; Termination Type:SMD; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3.9V
***ineon
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
***ure Electronics
N-Channel 560 V 3 Ohm Cool MOS™ Power Transistor - PG-TO252-3
***nell
MOSFET, N, 500V, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.8A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 2.7ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipat
***ineon
Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
***ure Electronics
Single N-Channel 800 V 2.7 mOhm 16 nC CoolMOS™ Power Mosfet - PG-TO252-3
***roFlash
Power Field-Effect Transistor, 2A I(D), 800V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:2A; On Resistance Rds(On):2.4Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; No. Of Pins:3Pins Rohs Compliant: Yes
***ment14 APAC
MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:2A; Package / Case:TO-252; Power Dissipation Pd:42W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2 / Drain-Source Voltage (Vds) V = 800 / ON Resistance (Rds(on)) Ohm = 2.7 / Gate-Source Voltage V = 20 / Fall Time ns = 18 / Rise Time ns = 15 / Turn-OFF Delay Time ns = 72 / Turn-ON Delay Time ns = 15 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 42
***ineon
800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar
***ineon SCT
Single N-Channel 600 V 2.1 Ohm 6.7 nC CoolMOS Power Mosfet - TO-252-3, PG-TO252-3, RoHS
***Yang
Transistor MOSFET N-CH 600V 3.7A 3-Pin TO-252 T/R - Tape and Reel
***ark
Mosfet, N-Ch, 600V, 3.7A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:600V; On Resistance Rds(On):1.8Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
***(Formerly Allied Electronics)
SFT1423-TL-E N-channel MOSFET Transistor; 2 A; 500 V; 3-Pin TP-FA
***emi
N-Channel Power MOSFET, 500V, 2A, 4.9Ω, Single TP/TP-FA
***Yang
Trans MOSFET N-CH 500V 2A 3-Pin(2+Tab) TP-FA T/R - Tape and Reel
***r Electronics
Small Signal Field-Effect Transistor, 2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
*** Services
CoC and 2-years warranty / RFQ for pricing
***emi
N-Channel Power MOSFET, SUPERFET® II, 800 V, 2 A, 3.4 Ω, DPAK
***r Electronics
Power Field-Effect Transistor, 2A I(D), 800V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
***emi
N-Channel Power MOSFET, QFET®, 600 V, 1.9 A, 4.7 Ω, DPAK
***r Electronics
Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Parte # Mfg. Descripción Valores Precio
SPD02N60C3BTMA1
DISTI # 31645194		Infineon Technologies AGTrans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2500
  • 2500:$0.4132
SPD02N60C3BTMA1
DISTI # SPD02N60C3BTMA1TR-ND		Infineon Technologies AGMOSFET N-CH 650V 1.8A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    SPD02N60C3BTMA1
    DISTI # SPD02N60C3BTMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 650V 1.8A DPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SPD02N60C3
      DISTI # 726-SPD02N60C3      		Infineon Technologies AGMOSFET N-Ch 600V 1.8A DPAK-2 CoolMOS C3
      RoHS: Compliant      		0
        SPD02N60C3BTMA1
        DISTI # 1156419RL        		Infineon Technologies AGMOSFET, N, COOLMOS, D-PAK
        RoHS: Compliant        		0
        • 10000:$0.6080
        • 2500:$0.6280
        • 1000:$0.7080
        • 500:$0.8980
        • 100:$1.0200
        • 10:$1.3300
        • 1:$1.5700
        SPD02N60C3BTMA1
        DISTI # 1156419        		Infineon Technologies AGMOSFET, N, COOLMOS, D-PAK
        RoHS: Compliant        		0
        • 10000:$0.6080
        • 2500:$0.6280
        • 1000:$0.7080
        • 500:$0.8980
        • 100:$1.0200
        • 10:$1.3300
        • 1:$1.5700
        Imagen Parte # Descripción
        SPD02N60C3BTMA1

        Mfr.#: SPD02N60C3BTMA1

        OMO.#: OMO-SPD02N60C3BTMA1

        		 MOSFET LOW POWER_LEGACY
        SPD02N60S5

        Mfr.#: SPD02N60S5

        OMO.#: OMO-SPD02N60S5-126

        		 IGBT Transistors MOSFET N-Ch 600V 1.8A DPAK-2 CoolMOS S5
        SPD02N60

        Mfr.#: SPD02N60

        OMO.#: OMO-SPD02N60-1190

        		 Nuevo y original
        SPD02N60C3

        Mfr.#: SPD02N60C3

        OMO.#: OMO-SPD02N60C3-1190

        		 Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
        SPD02N60C3(02N60C3)

        Mfr.#: SPD02N60C3(02N60C3)

        OMO.#: OMO-SPD02N60C3-02N60C3--1190

        		 Nuevo y original
        SPD02N60C3,02N60C3

        Mfr.#: SPD02N60C3,02N60C3

        OMO.#: OMO-SPD02N60C3-02N60C3-1190

        		 Nuevo y original
        SPD02N60C3BTMA1

        Mfr.#: SPD02N60C3BTMA1

        OMO.#: OMO-SPD02N60C3BTMA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 650V 1.8A DPAK
        SPD02N60C3_05

        Mfr.#: SPD02N60C3_05

        OMO.#: OMO-SPD02N60C3-05-1190

        		 Nuevo y original
        SPD02N60C5

        Mfr.#: SPD02N60C5

        OMO.#: OMO-SPD02N60C5-1190

        		 Nuevo y original
        SPD02N60S5BTMA1

        Mfr.#: SPD02N60S5BTMA1

        OMO.#: OMO-SPD02N60S5BTMA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 600V 1.8A TO-252
        Disponibilidad
        Valores:
        Available
        En orden:
        4500
        Ingrese la cantidad:
        El precio actual de SPD02N60C3BTMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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