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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| SPD02N60C3BTMA1 DISTI # SPD02N60C3BTMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 650V 1.8A DPAK RoHS: Not compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SPD02N60C3BTMA1 DISTI # SPD02N60C3BTMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 650V 1.8A DPAK RoHS: Not compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SPD02N60C3BTMA1 DISTI # 31645194 | Infineon Technologies AG | Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant | 2500 |
|
| SPD02N60C3 DISTI # 726-SPD02N60C3 | Infineon Technologies AG | MOSFET N-Ch 600V 1.8A DPAK-2 CoolMOS C3 RoHS: Compliant | 0 | |
| SPD02N60C3BTMA1 DISTI # 1156419 | Infineon Technologies AG | MOSFET, N, COOLMOS, D-PAK RoHS: Compliant | 0 |
|
| SPD02N60C3BTMA1 DISTI # 1156419RL | Infineon Technologies AG | MOSFET, N, COOLMOS, D-PAK RoHS: Compliant | 0 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: SPD02N60C3BTMA1 OMO.#: OMO-SPD02N60C3BTMA1 |
MOSFET LOW POWER_LEGACY |
|
Mfr.#: SPD02N60C3 OMO.#: OMO-SPD02N60C3-1190 |
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
|
|
Mfr.#: SPD02N60C3(02N60C3) OMO.#: OMO-SPD02N60C3-02N60C3--1190 |
Nuevo y original |
|
|
Mfr.#: SPD02N60C3,02N60C3 OMO.#: OMO-SPD02N60C3-02N60C3-1190 |
Nuevo y original |
|
Mfr.#: SPD02N60C3BTMA1 |
MOSFET N-CH 650V 1.8A DPAK |
|
|
Mfr.#: SPD02N60C3_05 OMO.#: OMO-SPD02N60C3-05-1190 |
Nuevo y original |
|
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Mfr.#: SPD02N60C5 OMO.#: OMO-SPD02N60C5-1190 |
Nuevo y original |