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| PartNumber | SIHB22N60AEL-GE3 | SIHB22N60AE-GE3 | SIHB22N60E-E3 |
| Description | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 650 V | 650 V |
| Id Continuous Drain Current | 21 A | 20 A | 21 A |
| Rds On Drain Source Resistance | 180 mOhms | 156 mOhms | 180 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 4 V | 4 V |
| Vgs Gate Source Voltage | 10 V | 30 V | 30 V |
| Qg Gate Charge | 41 nC | 48 nC | 57 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 208 W | 179 W | 227 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Series | EL | E | E |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 15 S | - | - |
| Fall Time | 28 ns | 21 ns | 35 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 24 ns | 33 ns | 27 ns |
| Factory Pack Quantity | 1 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 86 ns | 45 ns | 66 ns |
| Typical Turn On Delay Time | 27 ns | 19 ns | 18 ns |
| Packaging | - | Tube | Tube |
| Unit Weight | - | 0.077603 oz | 0.050717 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHB22N60EF-GE3 | MOSFET Nch 600V Vds 30V Vgs TO-263; w/diode | |
| SIHB22N60AEL-GE3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHB22N60AE-GE3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHB22N60E-E3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHB22N60E-GE3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHB22N60EL-GE3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHB22N60ET5-GE3 | MOSFET 600V Vds E Series D2PAK TO-263 | ||
| SIHB22N60ET1-GE3 | MOSFET 600V Vds E Series D2PAK TO-263 | ||
| SIHB22N60S-E3 | IGBT Transistors MOSFET 600V N-Channel Superjunction D2PAK | ||
| SIHB22N60E | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| SIHB22N60SE3 | Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| SIHB22N60SGE3 | Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
Vishay |
SIHB22N60E-E3 | RF Bipolar Transistors MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS | |
| SIHB22N60AEL-GE3 | MOSFET N-CHAN 600V | ||
| SIHB22N60AE-GE3 | MOSFET N-CH 600V 20A D2PAK | ||
| SIHB22N60E-GE3 | MOSFET N-CH 600V 21A D2PAK | ||
| SIHB22N60ET1-GE3 | MOSFET N-CH 600V 21A TO263 | ||
| SIHB22N60ET5-GE3 | MOSFET N-CH 600V 21A TO263 | ||
| SIHB22N60S-GE3 | MOSFET N-CH 650V TO263 | ||
| SIHB22N60EL-GE3 | MOSFET N-CH 600V 21A TO263 |