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SIHB22N60E-E3

SIHB22N60E-E3
Mfr. #:
SIHB22N60E-E3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHB22N60E-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB22N60E-E3 DatasheetSIHB22N60E-E3 Datasheet (P4-P6)SIHB22N60E-E3 Datasheet (P7-P9)
ECAD Model:
Más información:
SIHB22N60E-E3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
21 A
Rds On - Resistencia de la fuente de drenaje:
180 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
57 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
227 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Serie:
E
Marca:
Vishay / Siliconix
Otoño:
35 ns
Tipo de producto:
MOSFET
Hora de levantarse:
27 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
66 ns
Tiempo típico de retardo de encendido:
18 ns
Unidad de peso:
0.050717 oz
Tags
SIHB22N60E, SIHB22N60, SIHB22, SIHB2, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E Series N-Channel 600 V 0.18 O 86 nC Surface Mount Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK
***et
Trans MOSFET N-CH 600V 21A 3-Pin D2PAK
***i-Key
MOSFET N-CH 600V 21A D2PAK
***ark
N-CHANNEL 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHB22N60E-E3
DISTI # V36:1790_09219017		Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		0
  • 1000000:$2.0180
  • 500000:$2.0230
  • 100000:$2.6420
  • 10000:$3.9000
  • 1000:$4.1200
SIHB22N60E-E3
DISTI # SIHB22N60E-E3-ND		Vishay SiliconixMOSFET N-CH 600V 21A D2PAK
Min Qty: 1
Container: Tube		368In Stock
  • 5000:$1.9891
  • 3000:$2.0668
  • 1000:$2.1756
  • 100:$3.0303
  • 25:$3.4964
  • 10:$3.6990
  • 1:$4.1200
SIHB22N60E-E3
DISTI # SIHB22N60E-E3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin D2PAK - Tape and Reel (Alt: SIHB22N60E-E3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
    SIHB22N60E-E3
    DISTI # 781-SIHB22N60E-E3    		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant    		2025
    • 1:$4.1400
    • 10:$3.4300
    • 100:$2.8200
    • 250:$2.7300
    • 500:$2.4500
    • 1000:$2.0700
    • 2000:$1.9600
    SIHB22N60E-GE3
    DISTI # 781-SIHB22N60E-GE3    		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant    		2740
    • 1:$4.1400
    • 10:$3.4300
    • 100:$2.8200
    • 250:$2.7300
    • 500:$2.4500
    • 1000:$2.0700
    • 2000:$1.9600
    SIHB22N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant    		Americas - 62600
    • 50:$2.6850
    • 100:$2.4360
    • 250:$2.2160
    • 500:$2.1440
    • 1000:$1.9360
    Imagen Parte # Descripción
    SIHB22N60AE-GE3

    Mfr.#: SIHB22N60AE-GE3

    OMO.#: OMO-SIHB22N60AE-GE3

    		 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB22N60E-E3

    Mfr.#: SIHB22N60E-E3

    OMO.#: OMO-SIHB22N60E-E3

    		 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB22N60EL-GE3

    Mfr.#: SIHB22N60EL-GE3

    OMO.#: OMO-SIHB22N60EL-GE3

    		 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB22N60ET5-GE3

    Mfr.#: SIHB22N60ET5-GE3

    OMO.#: OMO-SIHB22N60ET5-GE3

    		 MOSFET 600V Vds E Series D2PAK TO-263
    SIHB22N60ET1-GE3

    Mfr.#: SIHB22N60ET1-GE3

    OMO.#: OMO-SIHB22N60ET1-GE3

    		 MOSFET 600V Vds E Series D2PAK TO-263
    SIHB22N60S-E3

    Mfr.#: SIHB22N60S-E3

    OMO.#: OMO-SIHB22N60S-E3-126

    		 IGBT Transistors MOSFET 600V N-Channel Superjunction D2PAK
    SIHB22N60E-E3

    Mfr.#: SIHB22N60E-E3

    OMO.#: OMO-SIHB22N60E-E3-VISHAY

    		 RF Bipolar Transistors MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
    SIHB22N60AEL-GE3

    Mfr.#: SIHB22N60AEL-GE3

    OMO.#: OMO-SIHB22N60AEL-GE3-VISHAY

    		 MOSFET N-CHAN 600V
    SIHB22N60ET1-GE3

    Mfr.#: SIHB22N60ET1-GE3

    OMO.#: OMO-SIHB22N60ET1-GE3-VISHAY

    		 MOSFET N-CH 600V 21A TO263
    SIHB22N60SGE3

    Mfr.#: SIHB22N60SGE3

    OMO.#: OMO-SIHB22N60SGE3-1190

    		 Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    Disponibilidad
    Valores:
    Available
    En orden:
    1985
    Ingrese la cantidad:
    El precio actual de SIHB22N60E-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    4,14 US$
    4,14 US$
    10
    3,43 US$
    34,30 US$
    100
    2,82 US$
    282,00 US$
    250
    2,73 US$
    682,50 US$
    500
    2,45 US$
    1 225,00 US$
    1000
    2,07 US$
    2 070,00 US$
    2000
    1,96 US$
    3 920,00 US$
    5000
    1,93 US$
    9 650,00 US$
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