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SIHB22N60AE-GE3

SIHB22N60AE-GE3
Mfr. #:
SIHB22N60AE-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHB22N60AE-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB22N60AE-GE3 DatasheetSIHB22N60AE-GE3 Datasheet (P4-P6)SIHB22N60AE-GE3 Datasheet (P7)
ECAD Model:
Más información:
SIHB22N60AE-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
20 A
Rds On - Resistencia de la fuente de drenaje:
156 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
48 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
179 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Serie:
E
Marca:
Vishay / Siliconix
Otoño:
21 ns
Tipo de producto:
MOSFET
Hora de levantarse:
33 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
45 ns
Tiempo típico de retardo de encendido:
19 ns
Unidad de peso:
0.077603 oz
Tags
SIHB22N60, SIHB22, SIHB2, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Power MOSFET N-Channel 600V 20A 3-Pin D2PAK
***ark
N-Channel 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHB22N60AE-GE3
DISTI # SIHB22N60AE-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 20A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		1000In Stock
  • 5000:$1.8668
  • 3000:$1.9397
  • 1000:$2.0418
  • 100:$2.8440
  • 25:$3.2816
  • 10:$3.4710
  • 1:$3.8600
SIHB22N60AE-GE3
DISTI # SIHB22N60AE-GE3		Vishay IntertechnologiesPower MOSFET N-Channel 600V 20A 3-Pin D2PAK - Tape and Reel (Alt: SIHB22N60AE-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$1.6900
  • 4000:$1.7900
  • 6000:$1.7900
  • 2000:$1.8900
  • 1000:$1.9900
SIHB22N60AE-GE3
DISTI # 78-SIHB22N60AE-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		1000
  • 1:$3.8800
  • 10:$3.2200
  • 100:$2.6500
  • 250:$2.5600
  • 500:$2.3000
  • 1000:$1.9400
  • 2000:$1.8400
SIHB22N60AEGE3Vishay Intertechnologies 
RoHS: Compliant		1000
    Imagen Parte # Descripción
    SIHB22N60AEL-GE3

    Mfr.#: SIHB22N60AEL-GE3

    OMO.#: OMO-SIHB22N60AEL-GE3

    		 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB22N60E-GE3

    Mfr.#: SIHB22N60E-GE3

    OMO.#: OMO-SIHB22N60E-GE3

    		 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB22N60ET1-GE3

    Mfr.#: SIHB22N60ET1-GE3

    OMO.#: OMO-SIHB22N60ET1-GE3

    		 MOSFET 600V Vds E Series D2PAK TO-263
    SIHB22N65E-GE3

    Mfr.#: SIHB22N65E-GE3

    OMO.#: OMO-SIHB22N65E-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS
    SIHB22N60E

    Mfr.#: SIHB22N60E

    OMO.#: OMO-SIHB22N60E-1190

    		 Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    SIHB22N60E-GE3

    Mfr.#: SIHB22N60E-GE3

    OMO.#: OMO-SIHB22N60E-GE3-VISHAY

    		 MOSFET N-CH 600V 21A D2PAK
    SIHB22N60ET1-GE3

    Mfr.#: SIHB22N60ET1-GE3

    OMO.#: OMO-SIHB22N60ET1-GE3-VISHAY

    		 MOSFET N-CH 600V 21A TO263
    SIHB22N60S-GE3

    Mfr.#: SIHB22N60S-GE3

    OMO.#: OMO-SIHB22N60S-GE3-VISHAY

    		 MOSFET N-CH 650V TO263
    SIHB22N60SE3

    Mfr.#: SIHB22N60SE3

    OMO.#: OMO-SIHB22N60SE3-1190

    		 Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    SIHB22N60EL-GE3

    Mfr.#: SIHB22N60EL-GE3

    OMO.#: OMO-SIHB22N60EL-GE3-VISHAY

    		 MOSFET N-CH 600V 21A TO263
    Disponibilidad
    Valores:
    Available
    En orden:
    1984
    Ingrese la cantidad:
    El precio actual de SIHB22N60AE-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    3,88 US$
    3,88 US$
    10
    3,22 US$
    32,20 US$
    100
    2,65 US$
    265,00 US$
    250
    2,56 US$
    640,00 US$
    500
    2,30 US$
    1 150,00 US$
    1000
    1,94 US$
    1 940,00 US$
    2000
    1,84 US$
    3 680,00 US$
    5000
    1,77 US$
    8 850,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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