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SIHB22N60AE-GE3

SIHB22N60AE-GE3
Mfr. #:
SIHB22N60AE-GE3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 600V 20A D2PAK
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHB22N60AE-GE3 Ficha de datos
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Más información:
SIHB22N60AE-GE3 más información
Atributo del producto
Valor de atributo
Tags
SIHB22N60, SIHB22, SIHB2, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Power MOSFET N-Channel 600V 20A 3-Pin D2PAK
***ark
N-Channel 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHB22N60AE-GE3
DISTI # SIHB22N60AE-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 20A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		1000In Stock
  • 5000:$1.8668
  • 3000:$1.9397
  • 1000:$2.0418
  • 100:$2.8440
  • 25:$3.2816
  • 10:$3.4710
  • 1:$3.8600
SIHB22N60AE-GE3
DISTI # SIHB22N60AE-GE3		Vishay IntertechnologiesPower MOSFET N-Channel 600V 20A 3-Pin D2PAK - Tape and Reel (Alt: SIHB22N60AE-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$1.6900
  • 4000:$1.7900
  • 6000:$1.7900
  • 2000:$1.8900
  • 1000:$1.9900
SIHB22N60AE-GE3
DISTI # 78-SIHB22N60AE-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		1000
  • 1:$3.8800
  • 10:$3.2200
  • 100:$2.6500
  • 250:$2.5600
  • 500:$2.3000
  • 1000:$1.9400
  • 2000:$1.8400
SIHB22N60AEGE3Vishay Intertechnologies 
RoHS: Compliant		1000
    Imagen Parte # Descripción
    SIHB22N60AEL-GE3

    Mfr.#: SIHB22N60AEL-GE3

    OMO.#: OMO-SIHB22N60AEL-GE3

    		 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB22N60E-GE3

    Mfr.#: SIHB22N60E-GE3

    OMO.#: OMO-SIHB22N60E-GE3

    		 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB22N60ET1-GE3

    Mfr.#: SIHB22N60ET1-GE3

    OMO.#: OMO-SIHB22N60ET1-GE3

    		 MOSFET 600V Vds E Series D2PAK TO-263
    SIHB22N60S-E3

    Mfr.#: SIHB22N60S-E3

    OMO.#: OMO-SIHB22N60S-E3-126

    		 IGBT Transistors MOSFET 600V N-Channel Superjunction D2PAK
    SIHB22N65E-GE3

    Mfr.#: SIHB22N65E-GE3

    OMO.#: OMO-SIHB22N65E-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS
    SIHB22N60E

    Mfr.#: SIHB22N60E

    OMO.#: OMO-SIHB22N60E-1190

    		 Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    SIHB22N60E-GE3

    Mfr.#: SIHB22N60E-GE3

    OMO.#: OMO-SIHB22N60E-GE3-VISHAY

    		 MOSFET N-CH 600V 21A D2PAK
    SIHB22N60ET1-GE3

    Mfr.#: SIHB22N60ET1-GE3

    OMO.#: OMO-SIHB22N60ET1-GE3-VISHAY

    		 MOSFET N-CH 600V 21A TO263
    SIHB22N60SE3

    Mfr.#: SIHB22N60SE3

    OMO.#: OMO-SIHB22N60SE3-1190

    		 Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    SIHB22N60EL-GE3

    Mfr.#: SIHB22N60EL-GE3

    OMO.#: OMO-SIHB22N60EL-GE3-VISHAY

    		 MOSFET N-CH 600V 21A TO263
    Disponibilidad
    Valores:
    Available
    En orden:
    5500
    Ingrese la cantidad:
    El precio actual de SIHB22N60AE-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
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    Ext. Precio
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    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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