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SIHB22N60ET5-GE3

SIHB22N60ET5-GE3
Mfr. #:
SIHB22N60ET5-GE3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 600V 21A TO263
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHB22N60ET5-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SIHB22N60ET5-GE3 más información
Atributo del producto
Valor de atributo
Tags
SIHB22N60E, SIHB22N60, SIHB22, SIHB2, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 600V 21A TO263
***ark
N-Channel 600V
***et
N-CHANNEL 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHB22N60ET5-GE3
DISTI # SIHB22N60ET5-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 21A TO263
RoHS: Not compliant
Min Qty: 800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 800:$2.5796
SIHB22N60ET5-GE3
DISTI # SIHB22N60ET5-GE3		Vishay IntertechnologiesN-CHANNEL 600V - Tape and Reel (Alt: SIHB22N60ET5-GE3)
RoHS: Not Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 8000:$1.7900
  • 4800:$1.8900
  • 1600:$1.9900
  • 3200:$1.9900
  • 800:$2.0900
SIHB22N60ET5-GE3
DISTI # 78-SIHB22N60ET5-GE3		Vishay IntertechnologiesMOSFET 600V Vds E Series D2PAK TO-263
RoHS: Compliant		0
  • 800:$2.0800
  • 2400:$1.9700
Imagen Parte # Descripción
SIHB22N60AE-GE3

Mfr.#: SIHB22N60AE-GE3

OMO.#: OMO-SIHB22N60AE-GE3

 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB22N60E-GE3

Mfr.#: SIHB22N60E-GE3

OMO.#: OMO-SIHB22N60E-GE3

 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB22N60EL-GE3

Mfr.#: SIHB22N60EL-GE3

OMO.#: OMO-SIHB22N60EL-GE3

 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB22N65E-GE3

Mfr.#: SIHB22N65E-GE3

OMO.#: OMO-SIHB22N65E-GE3

 MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
SIHB22N60ET1-GE3

Mfr.#: SIHB22N60ET1-GE3

OMO.#: OMO-SIHB22N60ET1-GE3

 MOSFET 600V Vds E Series D2PAK TO-263
SIHB22N65E-GE3

Mfr.#: SIHB22N65E-GE3

OMO.#: OMO-SIHB22N65E-GE3-VISHAY

 RF Bipolar Transistors MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS
SIHB22N60AEL-GE3

Mfr.#: SIHB22N60AEL-GE3

OMO.#: OMO-SIHB22N60AEL-GE3-VISHAY

 MOSFET N-CHAN 600V
SIHB22N60AE-GE3

Mfr.#: SIHB22N60AE-GE3

OMO.#: OMO-SIHB22N60AE-GE3-VISHAY

 MOSFET N-CH 600V 20A D2PAK
SIHB22N60S-GE3

Mfr.#: SIHB22N60S-GE3

OMO.#: OMO-SIHB22N60S-GE3-VISHAY

 MOSFET N-CH 650V TO263
SIHB22N60SGE3

Mfr.#: SIHB22N60SGE3

OMO.#: OMO-SIHB22N60SGE3-1190

 Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de SIHB22N60ET5-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,96 US$
2,96 US$
10
2,81 US$
28,07 US$
100
2,66 US$
265,95 US$
500
2,51 US$
1 255,90 US$
1000
2,36 US$
2 364,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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