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| PartNumber | NE3512S02-T1C-A | NE3512S02-A |
| Description | RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET | RF JFET Transistors C to Ku Band Super Low Noise Amp N-Ch |
| Manufacturer | CEL | CEL |
| Product Category | RF JFET Transistors | RF JFET Transistors |
| RoHS | Y | Y |
| Transistor Type | HFET | HFET |
| Technology | GaAs | GaAs |
| Gain | 13.5 dB | 13.5 dB |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 4 V | 4 V |
| Vgs Gate Source Breakdown Voltage | - 3 V | - 3 V |
| Id Continuous Drain Current | 70 mA | 70 mA |
| Maximum Operating Temperature | + 125 C | + 125 C |
| Pd Power Dissipation | 165 mW | 165 mW |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | S0-2 | S0-2 |
| Packaging | Reel | - |
| Operating Frequency | 12 GHz | 12 GHz |
| Product | RF JFET | RF JFET |
| Type | GaAs HFET | GaAs HFET |
| Brand | CEL | CEL |
| Forward Transconductance Min | 55 mS | 55 mS |
| NF Noise Figure | 0.35 dB | 0.35 dB |
| Product Type | RF JFET Transistors | RF JFET Transistors |
| Factory Pack Quantity | 2000 | 1 |
| Subcategory | Transistors | Transistors |
| Gate Source Cutoff Voltage | - | 4 V |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
CEL |
NE3512S02-T1C-A | RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET | |
| NE3512S02-A | RF JFET Transistors C to Ku Band Super Low Noise Amp N-Ch | ||
| NE3512S02-A | RF JFET Transistors C to Ku Band Super Low Noise Amp N-Ch | ||
| NE3512S02-T1C-A | RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET | ||
| NE3512S02-T1D-A | RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET | ||
| NE3512S02-T1D-AJT | Nuevo y original | ||
| NE3512S02 | Nuevo y original | ||
| NE3512S02-T1 | Nuevo y original | ||
| NE3512S02-T1B | Nuevo y original | ||
| NE3512S02-T1C | Nuevo y original | ||
| NE3512S02-T1D | Nuevo y original | ||
| NE3512S02-T1D-A/JT | Nuevo y original |