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| PartNumber | IPD60R1K0CEAUMA1 | IPD60R1K0CEATMA1 | IPD60R1K4C6 |
| Description | MOSFET CONSUMER | MOSFET N-Ch 600V 4.3A DPAK-2 | MOSFET N-Ch 650V 3.2A DPAK-2 CoolMOS C6 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PG-TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
| Id Continuous Drain Current | 6.8 A | 4.3 A | 3.2 A |
| Rds On Drain Source Resistance | 1 Ohms | 1 Ohms | 1.26 Ohms |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | 2.5 V |
| Vgs Gate Source Voltage | 10 V | 20 V | 20 V |
| Qg Gate Charge | 13 nC | 13 nC | 9.4 nC |
| Minimum Operating Temperature | - 40 C | - 40 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 61 W | 37 W | 28.4 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | CoolMOS | CoolMOS | CoolMOS |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm | 6.5 mm |
| Series | CoolMOS CE | - | CoolMOS C6 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 13 ns | 13 ns | 20 ns |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 8 ns | 8 ns | 7 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 60 ns | 60 ns | 40 ns |
| Typical Turn On Delay Time | 10 ns | 10 ns | 8 ns |
| Part # Aliases | IPD60R1K0CE SP001396896 | IPD60R1K0CEATMA1 SP001276032 | IPD60R1K4C6BTMA1 SP000799134 |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD60R1K0CEAUMA1 | MOSFET CONSUMER | |
| IPD60R1K5CEAUMA1 | MOSFET CONSUMER | ||
| IPD60R1K4C6ATMA1 | MOSFET LOW POWER_LEGACY | ||
| IPD60R1K0CEATMA1 | MOSFET N-CH 600V TO-252-3 | ||
| IPD60R1K5CEAUMA1 | MOSFET N-CHANNEL 650V 5A TO252 | ||
| IPD60R1K0CEAUMA1 | Trans MOSFET N-CH 600V 4.3A 3-Pin(2+Tab) DPAK T/R | ||
| IPD60R1K4C6 | MOSFET N-CH 600V 3.2A TO252-3 | ||
| IPD60R1K4C6ATMA1 | MOSFET N-CH 600V 3.2A TO252-3 | ||
| IPD60R1K5CEATMA1 | IGBT Transistors MOSFET N-Ch 650V 3.1A DPAK-2 | ||
Infineon Technologies |
IPD60R1K0CEATMA1 | MOSFET N-Ch 600V 4.3A DPAK-2 | |
| IPD60R1K4C6 | MOSFET N-Ch 650V 3.2A DPAK-2 CoolMOS C6 | ||
| IPD60R1K5CEATMA1 | MOSFET N-Ch 600V 3.1A DPAK-2 | ||
| IPD60R1K0CE | MOSFET CONSUMER | ||
| IPD60R1K0CE(1) | Nuevo y original | ||
| IPD60R1K4C6 HF | Nuevo y original | ||
| IPD60R1K4C6(60S1K0CE) | Nuevo y original | ||
| IPD60R1K4C6BTMA1 | Trans MOSFET N-CH 650V 3.2A 3-Pin(2+Tab) TO-252 (Alt: IPD60R1K4C6) | ||
| IPD60R1K5CEATMA1 , 2SD23 | Nuevo y original |