IPD60R1K4C6ATMA1

IPD60R1K4C6ATMA1
Mfr. #:
IPD60R1K4C6ATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 600V 3.2A TO252-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD60R1K4C6ATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
IPD60R1K4, IPD60R1K, IPD60R1, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 650V 3.2A 3-Pin(2+Tab) TO-252 T/R
***et Europe
Trans MOSFET N-CH 650V 3.2A 3-Pin(2+Tab) TO-252
***ark
Mosfet, N Channel, 600V, 3.2A, To252-3
***Components
MOSFET N-CH 3.2A 650V COOLMOS C6 TO252
***ment14 APAC
MOSFET, N-CH, 600V, 3.2A, TO252-3
***an P&S
600V,3.2A,N-ch power MOSFET
*** Source Electronics
MOSFET N-CH 600V 3.2A TO252-3
***ure Electronics
MOSFET LOW POWER_LEGACY
***ronik
N-CH 600V 3,2A 1400mOhm TO252-3
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
Parte # Mfg. Descripción Valores Precio
IPD60R1K4C6ATMA1
DISTI # V72:2272_06384833
Infineon Technologies AGTrans MOSFET N-CH 650V 3.2A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
2130
  • 1000:$0.4490
  • 500:$0.4852
  • 250:$0.5391
  • 100:$0.5454
  • 25:$0.7782
  • 10:$0.9510
  • 1:$1.1350
IPD60R1K4C6ATMA1
DISTI # V36:1790_06384833
Infineon Technologies AGTrans MOSFET N-CH 650V 3.2A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
0
    IPD60R1K4C6ATMA1
    DISTI # IPD60R1K4C6ATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 600V 3.2A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    6958In Stock
    • 1000:$0.4054
    • 500:$0.5068
    • 100:$0.6411
    • 10:$0.8360
    • 1:$0.9500
    IPD60R1K4C6ATMA1
    DISTI # IPD60R1K4C6ATMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 600V 3.2A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    6958In Stock
    • 1000:$0.4054
    • 500:$0.5068
    • 100:$0.6411
    • 10:$0.8360
    • 1:$0.9500
    IPD60R1K4C6ATMA1
    DISTI # IPD60R1K4C6ATMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 600V 3.2A TO252-3
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)
    5000In Stock
    • 12500:$0.3280
    • 5000:$0.3321
    • 2500:$0.3567
    IPD60R1K4C6ATMA1
    DISTI # 30679527
    Infineon Technologies AGTrans MOSFET N-CH 650V 3.2A 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant
    2130
    • 1000:$0.4490
    • 500:$0.4852
    • 250:$0.5391
    • 100:$0.5454
    • 25:$0.7782
    • 20:$0.9510
    IPD60R1K4C6ATMA1
    DISTI # IPD60R1K4C6ATMA1
    Infineon Technologies AGTrans MOSFET N-CH 650V 3.2A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R1K4C6ATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 25000:$0.2969
    • 15000:$0.3029
    • 10000:$0.3129
    • 5000:$0.3249
    • 2500:$0.3369
    IPD60R1K4C6ATMA1
    DISTI # 13AC9044
    Infineon Technologies AGMOSFET, N-CH, 600V, 3.2A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:3.2A,Drain Source Voltage Vds:600V,On Resistance Rds(on):1.26ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes4314
    • 1000:$0.3790
    • 500:$0.4100
    • 250:$0.4420
    • 100:$0.4740
    • 50:$0.5610
    • 25:$0.6470
    • 10:$0.7340
    • 1:$0.8790
    IPD60R1K4C6ATMA1
    DISTI # 726-IPD60R1K4C6ATMA1
    Infineon Technologies AGMOSFET LOW POWER_LEGACY
    RoHS: Compliant
    16851
    • 1:$0.8700
    • 10:$0.7270
    • 100:$0.4690
    • 1000:$0.3750
    IPD60R1K4C6ATMA1
    DISTI # 2726051
    Infineon Technologies AGMOSFET, N-CH, 600V, 3.2A, TO-252-34314
    • 500:£0.3150
    • 250:£0.3430
    • 100:£0.3690
    • 25:£0.5780
    • 5:£0.6420
    IPD60R1K4C6ATMA1
    DISTI # 2726051
    Infineon Technologies AGMOSFET, N-CH, 600V, 3.2A, TO-252-3
    RoHS: Compliant
    4314
    • 1000:$0.6490
    • 500:$0.8110
    • 100:$1.1100
    • 10:$1.4200
    • 1:$1.6300
    Imagen Parte # Descripción
    IPD60R1K0CEAUMA1

    Mfr.#: IPD60R1K0CEAUMA1

    OMO.#: OMO-IPD60R1K0CEAUMA1

    MOSFET CONSUMER
    IPD60R1K5CEAUMA1

    Mfr.#: IPD60R1K5CEAUMA1

    OMO.#: OMO-IPD60R1K5CEAUMA1

    MOSFET CONSUMER
    IPD60R1K0CEATMA1

    Mfr.#: IPD60R1K0CEATMA1

    OMO.#: OMO-IPD60R1K0CEATMA1

    MOSFET N-Ch 600V 4.3A DPAK-2
    IPD60R1K5CEATMA1

    Mfr.#: IPD60R1K5CEATMA1

    OMO.#: OMO-IPD60R1K5CEATMA1

    MOSFET N-Ch 600V 3.1A DPAK-2
    IPD60R1K0CEATMA1

    Mfr.#: IPD60R1K0CEATMA1

    OMO.#: OMO-IPD60R1K0CEATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 600V TO-252-3
    IPD60R1K5CEAUMA1

    Mfr.#: IPD60R1K5CEAUMA1

    OMO.#: OMO-IPD60R1K5CEAUMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CHANNEL 650V 5A TO252
    IPD60R1K0CE

    Mfr.#: IPD60R1K0CE

    OMO.#: OMO-IPD60R1K0CE-1190

    MOSFET CONSUMER
    IPD60R1K0CEAUMA1

    Mfr.#: IPD60R1K0CEAUMA1

    OMO.#: OMO-IPD60R1K0CEAUMA1-INFINEON-TECHNOLOGIES

    Trans MOSFET N-CH 600V 4.3A 3-Pin(2+Tab) DPAK T/R
    IPD60R1K4C6ATMA1

    Mfr.#: IPD60R1K4C6ATMA1

    OMO.#: OMO-IPD60R1K4C6ATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 600V 3.2A TO252-3
    IPD60R1K5CEATMA1

    Mfr.#: IPD60R1K5CEATMA1

    OMO.#: OMO-IPD60R1K5CEATMA1-INFINEON-TECHNOLOGIES

    IGBT Transistors MOSFET N-Ch 650V 3.1A DPAK-2
    Disponibilidad
    Valores:
    Available
    En orden:
    4000
    Ingrese la cantidad:
    El precio actual de IPD60R1K4C6ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,45 US$
    0,45 US$
    10
    0,42 US$
    4,23 US$
    100
    0,40 US$
    40,08 US$
    500
    0,38 US$
    189,25 US$
    1000
    0,36 US$
    356,30 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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