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IPD60R1K5CEATMA1

IPD60R1K5CEATMA1
Mfr. #:
IPD60R1K5CEATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 600V 3.1A DPAK-2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD60R1K5CEATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
3.1 A
Rds On - Resistencia de la fuente de drenaje:
1.5 Ohms
Vgs th - Voltaje umbral puerta-fuente:
2.5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
9.4 nC
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
28 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Carrete
Altura:
2.3 mm
Longitud:
6.5 mm
Tipo de transistor:
1 N-Channel
Ancho:
6.22 mm
Marca:
Infineon Technologies
Otoño:
20 ns
Tipo de producto:
MOSFET
Hora de levantarse:
7 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
40 ns
Tiempo típico de retardo de encendido:
8 ns
Parte # Alias:
IPD60R1K5CEATMA1 SP001276036
Unidad de peso:
0.139332 oz
Tags
IPD60R1K5, IPD60R1K, IPD60R1, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 600 V 3.1 A 1500 mO 9.4 nC CoolMOS CE Power Transistor - DPAK
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 0.047uF 25volt X7R +/-5%
***ical
Trans MOSFET N-CH 800V 3.1A 3-Pin(2+Tab) DPAK T/R
***et
Trans MOSFET N-CH 650V 3.1A 3-Pin TO-252 T/R
*** Electronic Components
IGBT Transistors MOSFET N-Ch 650V 3.1A DPAK-2
***ineon SCT
Trans MOSFET N-CH 650V 3.2A 3-Pin(2+Tab) TO-252 T/R, PG-TO252-3, RoHS
***nell
MOSFET, N-CH, 600V, 3.2A, TO252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.2A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.26ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Po
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***ical
Trans MOSFET N-CH 650V 2.4A 3-Pin(2+Tab) TO-252 T/R
*** Stop Electro
Power Field-Effect Transistor, 2.4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
***nell
MOSFET, N-CH, 600V, 2.4A, TO252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.4A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***ical
Trans MOSFET N-CH 650V 2.8A Automotive 3-Pin(2+Tab) DPAK T/R
***et
Trans MOSFET N-CH 650(Min)V 2.8A 3-Pin TO-252 T/R
***ineon SCT
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-TO252-3, RoHS
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
***et Europe
Trans MOSFET N-CH 500V 3A 3-Pin DPAK
***S
French Electronic Distributor since 1988
***enic
TO-252-3 MOSFETs ROHS
*** Europe
N-CH SINGLE 500V TO252
***el Nordic
Contact for details
***ark
N-CHANNEL 500V
***et
TRANS MOSFET N-CH 500V 2.5A 3PIN DPAK
***ser
MOSFETs 500V, N-CHA NNEL MOSFET
***inecomponents.com
500V N-Channel Advanced QFET® C-series
***i-Key
MOSFET N-CH 500V 2.6A DPAK
***-Wing Technology
POWER FIELD-EFFECT TRANSISTOR
***ser
MOSFETs 500V N-Channel QFET
Parte # Mfg. Descripción Valores Precio
IPD60R1K5CEATMA1
DISTI # IPD60R1K5CEATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 600V TO-252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		27In Stock
  • 1000:$0.2483
  • 500:$0.3213
  • 100:$0.4089
  • 10:$0.5480
  • 1:$0.6400
IPD60R1K5CEATMA1
DISTI # IPD60R1K5CEATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 600V TO-252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		27In Stock
  • 1000:$0.2483
  • 500:$0.3213
  • 100:$0.4089
  • 10:$0.5480
  • 1:$0.6400
IPD60R1K5CEATMA1
DISTI # IPD60R1K5CEATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 600V TO-252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    IPD60R1K5CEATMA1
    DISTI # 726-IPD60R1K5CEATMA1    		Infineon Technologies AGMOSFET N-Ch 600V 3.1A DPAK-2
    RoHS: Compliant    		149
    • 1:$0.6300
    • 10:$0.5210
    • 100:$0.3180
    • 1000:$0.2460
    • 2500:$0.2100
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    		 RES 0.008 OHM 1% 2W 2512
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    Mfr.#: VS-15ETL06-M3

    OMO.#: OMO-VS-15ETL06-M3-VISHAY

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    Mfr.#: GRJ155R60J106ME11D

    OMO.#: OMO-GRJ155R60J106ME11D-MURATA-ELECTRONICS

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    OMO.#: OMO-TPS3808G09DBVR-TEXAS-INSTRUMENTS

    		 Supervisory Circuits Programmable-Delay Supervisory
    Disponibilidad
    Valores:
    149
    En orden:
    2132
    Ingrese la cantidad:
    El precio actual de IPD60R1K5CEATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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