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IPD60R1K0CEAUMA1

IPD60R1K0CEAUMA1
Mfr. #:
IPD60R1K0CEAUMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET CONSUMER
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD60R1K0CEAUMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPD60R1K0CEAUMA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PG-TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
6.8 A
Rds On - Resistencia de la fuente de drenaje:
1 Ohms
Vgs th - Voltaje umbral puerta-fuente:
2.5 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
13 nC
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
61 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Carrete
Altura:
2.3 mm
Longitud:
6.5 mm
Serie:
CoolMOS CE
Tipo de transistor:
1 N-Channel
Ancho:
6.22 mm
Marca:
Infineon Technologies
Otoño:
13 ns
Sensible a la humedad:
Yes
Tipo de producto:
MOSFET
Hora de levantarse:
8 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
60 ns
Tiempo típico de retardo de encendido:
10 ns
Parte # Alias:
IPD60R1K0CE SP001396896
Unidad de peso:
0.139332 oz
Tags
IPD60R1K0, IPD60R1K, IPD60R1, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Electronics
On a Reel of 2500, N-Channel MOSFET, 6.8 A, 650 V, 3-Pin DPAK Infineon IPD60R1K0CEAUMA1
***ineon SCT
Single N-Channel 600 V 860 mOhm 13 nC CoolMOS Power Mosfet - TO-252-3, PG-TO252-3, RoHS
***ark
Mosfet, N-Ch, 600V, 6.8A, To-252; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.86Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPD60R1K0CEAUMA1
***nsix Microsemi
Power Field-Effect Transistor, 6.8A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
***ure Electronics
Single N-Channel 600 V 500 Ohm 0.65 nC SIPMOS® Small Signal Mosfet - SOT-23
***ical
Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R
***ark
Mosfet, N-Ch, 600V, 0.021A, 0.5W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:21Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon BSS127H6327XTSA2
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 21 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) Ohm = 500 / Gate-Source Voltage V = 20 / Fall Time ns = 115 / Rise Time ns = 9.7 / Turn-OFF Delay Time ns = 14 / Turn-ON Delay Time ns = 6.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
***ure Electronics
Single N-Channel 600 V 2.1 Ohm 6.7 nC CoolMOS™ Power Mosfet - SOT-223
***ical
Trans MOSFET N-CH 600V 3.7A 3-Pin(2+Tab) SOT-223 T/R
***ark
Mosfet, N-Ch, 600V, 3.7A, Sot-223-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:3.7A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPN60R2K1CEATMA1
***ineon
Cost-effective drop-in replacement for DPAK | Summary of Features: Drop-in replacement for DPAK at lower cost; Space savings in designs with low power dissipation; Comparable thermal behavior to DPAK | Target Applications: Lighting; Adapter; Consumer
***nell
MOSFET, N-CH, 600V, 3.7A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.7A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.89ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 5W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS CE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ure Electronics
Single N-Channel 600 V 3.4 Ohm 4.6 nC CoolMOS™ Power Mosfet - SOT-223
***Yang
Trans MOSFET N-CH 650V 3.9A 3-Pin SOT-223 - Tape and Reel
***nell
MOSFET, N-CH, 600V, 2.6A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.6A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 3.06ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 5W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS CE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
Cost-effective drop-in replacement for DPAK | Summary of Features: Drop-in replacement for DPAK at lower cost; Space savings in designs with low power dissipation; Comparable thermal behavior to DPAK | Target Applications: Lighting; Adapter; Consumer
***icroelectronics
N-channel 600 V, 13 Ohm typ., 0.3 A Zener-protected SuperMESH Power MOSFET in SOT-223 package
***ure Electronics
N-Channel 600 V 15 Ohm 4.9 nC Surface Mount SuperMESH Power MosFet- SOT-223
***ical
Trans MOSFET N-CH 600V 0.3A 4-Pin(3+Tab) SOT-223 T/R
***ment14 APAC
Transistor, MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Source Voltage Vds:600V; On Resistance Rds(on):15ohm;
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 300 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) Ohm = 15 / Gate-Source Voltage V = 30 / Fall Time ns = 28 / Rise Time ns = 5 / Turn-OFF Delay Time ns = 13 / Turn-ON Delay Time ns = 5.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 3.3
***nell
TRANSISTOR, MOSFET; Transistor Polarity: N Channel; Continuous Drain Current Id: 300mA; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 15ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 2W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 300mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 600V; Voltage Vgs Max: 3.75V; Voltage Vgs Rds on Measurement: 10V
***ure Electronics
Single N-Channel 600 V 190 Ohm 1.08 nC 1.25 W Silicon SMT Mosfet - SOT-23
***ical
Trans MOSFET N-CH 600V 0.07A Automotive 3-Pin SOT-23 T/R
***(Formerly Allied Electronics)
N-Channel Enhancement MOSFET SOT-23 | Diodes Inc BSS127S-7
***nell
MOSFET, N-CH, 600V, 0.05A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 50mA; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 80ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 610mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***icroelectronics
N-channel 600 V, 13 Ohm typ., 0.25 A Zener-protected SuperMESH(TM) Power MOSFET in SO-8 package
***ure Electronics
N-Channel 600 V 15 Ohm SMT SuperMESH Power Mosfet - SOIC-8
***nell
MOSFET, N-CH, 600V, 0.25A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 250mA; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Po
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
CoolMOS CE Power MOSFETs - 600-650V
Infineon 600V/650V CoolMOS™ CE N-Channel Power MOSFETs are a technology platform of Infineon's market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. These 600V/650V CoolMOS™ MOSFETs are cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still been price attractive. These devices target low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications.
Parte # Mfg. Descripción Valores Precio
IPD60R1K0CEAUMA1
DISTI # V72:2272_13982023		Infineon Technologies AGTrans MOSFET N-CH 600V 4.3A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2585
  • 1000:$0.2627
  • 500:$0.3303
  • 250:$0.3337
  • 100:$0.3372
  • 25:$0.5253
  • 10:$0.5838
  • 1:$0.7064
IPD60R1K0CEAUMA1
DISTI # IPD60R1K0CEAUMA1-ND		Infineon Technologies AGCONSUMER
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.2655
IPD60R1K0CEAUMA1
DISTI # 32133351		Infineon Technologies AGTrans MOSFET N-CH 600V 4.3A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2585
  • 29:$0.7064
IPD60R1K0CEAUMA1
DISTI # 33655369		Infineon Technologies AGTrans MOSFET N-CH 600V 4.3A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2500
  • 2500:$0.2184
IPD60R1K0CEAUMA1
DISTI # IPD60R1K0CEAUMA1		Infineon Technologies AGCONSUMER - Tape and Reel (Alt: IPD60R1K0CEAUMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.2209
  • 15000:$0.2249
  • 10000:$0.2329
  • 5000:$0.2419
  • 2500:$0.2509
IPD60R1K0CEAUMA1
DISTI # SP001396896		Infineon Technologies AGCONSUMER (Alt: SP001396896)
RoHS: Compliant
Min Qty: 2500		Europe - 0
  • 25000:€0.2069
  • 15000:€0.2229
  • 10000:€0.2419
  • 5000:€0.2639
  • 2500:€0.3219
IPD60R1K0CEAUMA1
DISTI # 34AC1675		Infineon Technologies AGMOSFET, N-CH, 600V, 6.8A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:6.8A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.86ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes2452
  • 1000:$0.2830
  • 500:$0.3060
  • 250:$0.3290
  • 100:$0.3520
  • 50:$0.4170
  • 25:$0.4820
  • 10:$0.5460
  • 1:$0.6570
IPD60R1K0CEAUMA1
DISTI # 726-IPD60R1K0CEAUMA1		Infineon Technologies AGMOSFET CONSUMER
RoHS: Compliant		14307
  • 1:$0.6500
  • 10:$0.5410
  • 100:$0.3490
  • 1000:$0.2800
IPD60R1K0CEAUMA1
DISTI # 1300898P		Infineon Technologies AGMOSFET N-CH 600V 6.8A COOLMOS CE TO-252, RL1800
  • 125:£0.1860
IPD60R1K0CEAUMA1
DISTI # 2781166		Infineon Technologies AGMOSFET, N-CH, 600V, 6.8A, TO-252
RoHS: Compliant		2452
  • 5000:$0.3520
  • 1000:$0.3710
  • 500:$0.3930
  • 250:$0.4540
  • 100:$0.5380
  • 25:$0.6590
  • 5:$0.7560
IPD60R1K0CEAUMA1
DISTI # 2781166		Infineon Technologies AGMOSFET, N-CH, 600V, 6.8A, TO-2522452
  • 500:£0.2310
  • 250:£0.2490
  • 100:£0.2660
  • 10:£0.4570
  • 1:£0.5680
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Disponibilidad
Valores:
14
En orden:
1997
Ingrese la cantidad:
El precio actual de IPD60R1K0CEAUMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,65 US$
0,65 US$
10
0,54 US$
5,41 US$
100
0,35 US$
34,90 US$
1000
0,28 US$
280,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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